公开(公告)号：US09890456B2

公开(公告)日：2018-02-13

申请号：US14465252

申请日：2014-08-21

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Eric Hill ,  Jereld Lee Winkler

IPC: B01J19/24 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/452

CPC classification number: C23C16/46 ,  C23C16/452 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32816

Abstract: A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

公开(公告)号：US09809876B2

公开(公告)日：2017-11-07

申请号：US14153658

申请日：2014-01-13

Applicant: Centre Luxembourgeois de Recherches pour le Verre et la Ceramique (C.R.V.C) SaRL

Inventor： Gilbert Galan ,  Jean-Philippe Uselding ,  Guy Comans ,  Marcel Schloremberg

IPC: C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC classification number: C23C14/34 ,  H01J37/32816 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/332

Abstract: An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure).

公开(公告)号：US09793097B2

公开(公告)日：2017-10-17

申请号：US14810279

申请日：2015-07-27

Applicant: Lam Research Corporation

Inventor： Kyle Spaulding ,  James Rogers

IPC: C30B25/14 ,  C30B25/16 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/66

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45589 ,  C30B25/14 ,  C30B25/165 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32816 ,  H01J2237/16 ,  H01L22/26

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. A gas inlet provides gas into the processing chamber. An exhaust pressure system exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides at independent exhaust pressure control for each part of the periphery for the at least three parts.

公开(公告)号：US20170140907A1

公开(公告)日：2017-05-18

申请号：US15420472

申请日：2017-01-31

Applicant: CANON ANELVA CORPORATION

Inventor： Taichi HIROMI ,  Hidetoshi SHIMOKAWA ,  Atsuyuki ICHIKAWA

IPC: H01J37/34 ,  G01L21/00

CPC classification number: H01J37/3447 ,  C23C14/564 ,  C23C16/4401 ,  G01L21/00 ,  H01J37/32816 ,  H01J37/32935 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3476 ,  H01J2237/026 ,  H01J2237/24585 ,  H01J2237/3322 ,  H01L21/203 ,  H01L21/285 ,  H01L21/2855

Abstract: A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to shield the opening portion from the sputtering space. The opening portion is formed so that a pressure gauge capable of measuring the pressure in the sputtering space can be attached, and the shield member is arranged so that at least a part of the shield member is buried in the concave portion.

公开(公告)号：US20170044018A1

公开(公告)日：2017-02-16

申请号：US15246427

申请日：2016-08-24

Applicant: California Institute of Technology

Inventor： David A. Boyd

IPC: C01B31/04 ,  H01L29/16 ,  C23C16/26 ,  H01J37/32 ,  C23C16/52 ,  H01L21/02 ,  H01L29/32

CPC classification number: C23C16/26 ,  B01J19/088 ,  B01J19/22 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C23C16/0245 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32816 ,  H01J2237/335 ,  H01L21/02046 ,  H01L21/02425 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/1606 ,  H01L29/32

Abstract: A method for forming graphene includes providing a substrate, subjecting the substrate to a reduced pressure environment, and providing a carrier gas and a carbon source. The method also includes exposing at least a portion of the substrate to the carrier gas, the carbon source, and at least one atmospheric gas and performing a CMOS compatible etching process on the at least a portion of the substrate. The method further includes performing, concurrently with the performing the CMOS compatible etching process, a CMOS compatible graphene growth process to convert a portion of the carbon source to graphene on the at least a portion of the substrate.

Abstract translation: 一种用于形成石墨烯的方法包括提供基板，对基板进行减压环境，以及提供载气和碳源。 该方法还包括将衬底的至少一部分暴露于载体气体，碳源和至少一种气氛气体，并在衬底的至少一部分上执行CMOS兼容的蚀刻工艺。 该方法还包括与执行CMOS兼容的蚀刻工艺同时执行CMOS相容的石墨烯生长工艺，以将碳源的一部分转化为在衬底的至少一部分上的石墨烯。

公开(公告)号：US20170040144A1

公开(公告)日：2017-02-09

申请号：US14688363

申请日：2015-04-16

Applicant: Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

Inventor： Svetozar Popovic ,  JANARDAN UPADHYAY ,  LEPOSAVA VUSKOVIC ,  H. Lawrence Phillips ,  ANNE-MARIE VALENTE-FELICIANO

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32082 ,  H01J37/32394 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32816 ,  H01J2237/334

Abstract: A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

Abstract translation: 用于对三维结构内的表面进行有效等离子体蚀刻的方法可以包括将内部电极定位在腔室内; 排空腔室; 向腔室内加入第一惰性气体; 调节室内的压力; 沿室腔的内壁产生等离子体护套; 调整内部电极上的正偏压以建立有效的等离子体鞘电压; 向腔室内加入第一电负性气体; 可选地重新调整内部电极上的正的直流偏压重新建立腔室上的有效等离子体鞘电压; 蚀刻室腔的内壁; 并将内壁抛光至所需的表面粗糙度。

公开(公告)号：US20160358794A1

公开(公告)日：2016-12-08

申请号：US15158788

申请日：2016-05-19

Applicant: Tokyo Electron Limited

Inventor： Shigehiro MIURA

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01J37/3244 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/56 ,  H01J37/32366 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/68764 ,  H01L21/68771

Abstract: A substrate processing apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. The turntable includes a substrate receiving area formed in a surface along a circumferential direction thereof. An etching area is provided at a predetermined area along the circumferential direction of the turntable. An etching gas supply unit is provided in the etching area so as to face the surface of the turntable and including gas discharge holes arranged extending in a radial direction of the turntable. A reaction energy decrease prevention unit configured to prevent a decrease in etching reaction energy in an outer area of the turntable in the etching area is provided.

Abstract translation: 基板处理装置包括真空室和设置在真空室中的转盘。 转盘包括沿其圆周方向形成在表面中的基板接收区域。 沿着转台的圆周方向的预定区域设置蚀刻区域。 蚀刻气体供给单元设置在蚀刻区域中，以面对转台的表面，并且包括沿着转盘的径向方向延伸的排气孔。 提供了一种反应能量减少预防单元，其被配置为防止在蚀刻区域中的转台的外部区域中的蚀刻反应能量的降低。

公开(公告)号：US09484191B2

公开(公告)日：2016-11-01

申请号：US13791339

申请日：2013-03-08

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  C23C16/452 ,  C23C16/455 ,  C23C16/507 ,  B08B7/00

CPC classification number: H01J37/32449 ,  B08B7/0035 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/50 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32816 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335

Abstract: A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.

Abstract translation: 公开了一种从远程等离子体单元向反应室提供脉冲激发物质的系统和方法。 该系统包括压力控制装置，用于控制远程等离子体单元处的压力，因为来自远程等离子体单元的反应物质被脉冲到反应室。

公开(公告)号：US20160307743A1

公开(公告)日：2016-10-20

申请号：US15068508

申请日：2016-03-11

Applicant: Lam Research Corporation

Inventor： Daniel Arthur Brown ,  John Patrick Holland ,  Michael C. Kellogg ,  James E. Tappan ,  Jerrel K. Antolik ,  Ian Kenworthy ,  Theo Panagopoulos ,  Zhigang Chen

IPC: H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32651 ,  H01J37/32724

Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

Abstract translation: 提供等离子体室以增加等离子体室内的电导并增加电导的均匀性。 用于向等离子体室供电的射频（RF）路径相对于等离子体室的中心轴对称。 此外，用于从等离子体室移除材料的泵相对于中心轴线对称。 RF路径和泵的对称布置有助于提高等离子体室内的电导均匀性。

公开(公告)号：US20160276199A1

公开(公告)日：2016-09-22

申请号：US15070763

申请日：2016-03-15

Applicant: DISCO CORPORATION

Inventor： Hidekazu Iida

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32816

Abstract: In a state in which a wafer held by a holding portion contacts with an attraction face of an electrostatic chuck after a loading unit loads the wafer into a chamber, the holding portion is connected to ground and a DC voltage is applied to a lower electrode. Then, the holding portion cancels the attraction of the wafer and is spaced away from the wafer thereby to charge the electrostatic chuck and the wafer with electric charge different in polarity from each other such that the wafer is attracted and held by the attraction face.

Abstract translation: 在加载单元将晶片装载到室中之后，由保持部保持的晶片与静电卡盘的吸附面接触的状态下，保持部与地连接，向下电极施加直流电压。 然后，保持部分抵消晶片的吸引力并与晶片间隔开，从而使静电卡盘和晶片以极性彼此不同的电荷充电，使得晶片被吸引面吸引并保持。