公开(公告)号：US5587587A

公开(公告)日：1996-12-24

申请号：US284992

申请日：1994-08-04

Applicant: Hiroyuki Hashimoto

Inventor： Hiroyuki Hashimoto

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  H01J37/304

CPC classification number: H01J37/026 ,  H01J37/3171 ,  H01J2237/0045

Abstract: An ion implanting apparatus for irradiating a material, for example, a semiconductor wafer, with an ion beam generated at an ion source, for implanting the ion into the material, is provided with a magnet at a side of the material opposite to a side into which the ion is irradiated. Thereby, the implantation is performed without charging thereon and with a high yielding ratio.

Abstract translation: 一种离子注入装置，用于在离子源处产生的离子束照射材料，例如半导体晶片，用于将离子注入到材料中，在该材料的与侧面相反的一侧设置有磁体 离子被照射。 由此，不进行充电而以高的屈服比进行注入。

公开(公告)号：US5531420A

公开(公告)日：1996-07-02

申请号：US270022

申请日：1994-07-01

Applicant: Victor M. Benveniste

Inventor： Victor M. Benveniste

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H05H3/00

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0044

Abstract: An ion beam neutralizer has an electron source and an electron deflector for directing electrons from the source into an ion beam. A power supply biases an acceleration grid to a potential suitable for accelerating electrons away from a filament that produces electrons. A second grid defines an electric field through which the electrons move. Electrons pass through the second grid and are deflected by a field between the second grid and a parabolic shaped metal deflector.

Abstract translation: 离子束中和器具有电子源和用于将电子从源引导到离子束中的电子偏转器。 电源将加速度网格偏置到适于加速电子的电位远离产生电子的细丝。 第二个栅格定义电子通过其移动的电场。 电子通过第二格栅并被第二格栅和抛物线形金属偏转器之间的场偏转。

公开(公告)号：US5451783A

公开(公告)日：1995-09-19

申请号：US218115

申请日：1994-03-25

Applicant: Peter Coxon ,  Bruce J. McIntosh

Inventor： Peter Coxon ,  Bruce J. McIntosh

IPC: H01J37/02 ,  H01J37/285 ,  H01J49/48 ,  H01J49/44

CPC classification number: H01J37/026 ,  H01J37/285 ,  H01J49/484 ,  H01J2237/0044 ,  H01J2237/04926 ,  H01J2237/2855

Abstract: A charged particle analyzer which irradiates a specimen and analyzes charged particles emitted therefrom, for example a photo electron spectrometer, having a flood-source which emits charged particles to neutralize the charge which develops on a specimen. The analyzer is provided with electrostatic and magnetic lenses which may be used separately or in combination. The flood source is provided within the lens column of the analyzer and is arranged such that when the electrostatic lens is in use, the charged particles emitted by the flood source pass around the outside of the objective electrostatic lens element, whereas when the magnetic lens is in use, or when both lenses are in use, they pass through that element.

Abstract translation: 一种带电粒子分析仪，其照射样本并分析从其发射的带电粒子，例如光电子能谱仪，其具有发射带电粒子的泛洪源，以中和样品上产生的电荷。 分析仪具有可以单独使用或组合使用的静电和磁性透镜。 洪水源设置在分析仪的透镜柱内，并且布置成使得当使用静电透镜时，由洪水源发射的带电粒子通过目标静电透镜元件的外侧，而当磁透镜为 在使用中，或当两个镜头都在使用时，它们通过该元件。

公开(公告)号：US5354986A

公开(公告)日：1994-10-11

申请号：US974873

申请日：1992-11-12

Applicant: Satoshi Yamada ,  Hirohisa Yamamoto ,  Shigeru Shiratake

Inventor： Satoshi Yamada ,  Hirohisa Yamamoto ,  Shigeru Shiratake

IPC: C23C14/48 ,  C23C14/54 ,  G21K1/14 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01J37/30 ,  H05H3/00

CPC classification number: G21K1/14 ,  H01J37/023 ,  H01J37/3171 ,  H01J2237/0044 ,  H01J2237/30455

Abstract: An ion implantation apparatus includes a charge neutralizer having a control circuit which controls the quantity of secondary electrons irradiating a semiconductor wafer. Electrons are generated in response to a direction of movement of a semiconductor wafer to neutralize positive charge on the semiconductor wafer. The apparatus can neutralize the positive charge homogeneously and prevent electrical breakdown of the semiconductor wafer.

Abstract translation: 离子注入装置包括具有控制电路的电荷中和器，该控制电路控制照射半导体晶片的二次电子的量。 响应于半导体晶片的移动方向产生电子以中和半导体晶片上的正电荷。 该装置可以均匀地中和正电荷并防止半导体晶片的电击穿。

公开(公告)号：US5336895A

公开(公告)日：1994-08-09

申请号：US903467

申请日：1992-06-25

Applicant: Akihiko Nakano

Inventor： Akihiko Nakano

IPC: G01Q40/00 ,  H01J49/06 ,  H01J37/02 ,  H01J37/20 ,  H01J37/252 ,  H01J49/02 ,  G01N23/00

CPC classification number: H01J37/02

Abstract: A reference grid for use in charged particle beam spectroscopes in analyzing an impurity contained in a target sample, which includes a grid composed of a material free of the impurity.

Abstract translation: 用于分析包含在目标样品中的杂质的带电粒子束分光器的参考栅格，其包括由不含杂质的材料构成的栅格。

公开(公告)号：US5315119A

公开(公告)日：1994-05-24

申请号：US983229

申请日：1992-11-19

Applicant: Fumio Komatsu ,  Katsuya Okumura ,  Motosuke Miyoshi

Inventor： Fumio Komatsu ,  Katsuya Okumura ,  Motosuke Miyoshi

IPC: G21K5/04 ,  H01J37/02 ,  H01J37/147 ,  H01J37/302 ,  H01L21/66

CPC classification number: H01J37/3026 ,  H01J37/026

Abstract: To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.

Abstract translation: 为了防止电荷积累在由电子束扫描的平面上并进一步提高S / N比，电子束照射装置包括：位置信息信号输出部分，用于输出位置信息信号，以依次指定位置信息信号 电子束照射在由电子束扫描的平面上，以便随机地指定照射位置; 以及照射控制器，用于响应于输出的位置信息信号，控制电子束在照射位置照射电子束。 此外，为了在像素时钟信号的周期内在足够的时间间隔内积分光电信号，电信号检测电路包括多个采样保持电路和用于依次选择和激活采样保持电路的选择电路。

公开(公告)号：US5250780A

公开(公告)日：1993-10-05

申请号：US755892

申请日：1991-09-06

Applicant: Bernard Hansz ,  Silvano Keller

Inventor： Bernard Hansz ,  Silvano Keller

IPC: B23K10/00 ,  C08J7/00 ,  C23C14/34 ,  H01J37/02 ,  H01J37/32 ,  H05H1/26 ,  B23K9/00

CPC classification number: H01J37/20 ,  H01J37/32752 ,  H01J2237/002 ,  H01J2237/2001

Abstract: The apparatus serves for treating workpieces by means of a plasma torch in a gaseous, preferably in an inert gaseous atmosphere. For this purpose, there is provided a gas-tight container and, in the interior of the container, a plasma gun as well as a cooling member for cooling the treated workpiece by a gaseous cooling medium stream. The cooling medium is a gas circulating in a closed circuit. Thus, the cooling gas can continuously used because heat is removed from the gas in a heat exchanger. A cooling operation can be realized in this way in temperature regions which are much higher than if liquefied gas is used.

Abstract translation: 该装置用于通过等离子体焰炬处理气体，优选在惰性气体气氛中处理工件。 为此，提供了一种不透气的容器，并且在容器的内部具有等离子体枪以及用于通过气态冷却介质流冷却经处理的工件的冷却构件。 冷却介质是在闭路中循环的气体。 因此，冷却气体可以连续使用，因为在热交换器中从气体中除去热量。 在这样的温度区域中可以实现冷却操作，这比使用液化气体要高得多。

公开(公告)号：US5144147A

公开(公告)日：1992-09-01

申请号：US750949

申请日：1991-08-28

Applicant: Masakazu Shiozaki ,  Katsuya Okumura

Inventor： Masakazu Shiozaki ,  Katsuya Okumura

IPC: C23C14/48 ,  C23G5/00 ,  H01J37/02 ,  H01J37/16 ,  H01J37/18 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/02 ,  H01J2237/006 ,  H01J2237/022

Abstract: The present invention is directed to the cleaning of an ion implantation apparatus. The ion implantation apparatus of the present invention comprises a sample holder 21 and a gauge 23 acting as a passageway of an ion beam running toward a sample held by the sample holder. The gauge is provided with a gas inlet port 25 for introducing a reactive gas into the ion beam passageway. The reactive gas collides against the ion beam within the ion beam passageway so as to be ionized. The ionized reactive permits removing a stain attached to the ion implantation apparatus. If the ion implantation apparatus further comprises a bias source 26 for applying voltage of a desired polarity to the gauge, the cleaning can be performed more efficiently.

公开(公告)号：US5089710A

公开(公告)日：1992-02-18

申请号：US577001

申请日：1990-09-04

Applicant: Shuji Kikuchi ,  Mitsuyuki Yamaguchi ,  Masahiko Matsudo

Inventor： Shuji Kikuchi ,  Mitsuyuki Yamaguchi ,  Masahiko Matsudo

IPC: H01J37/317 ,  H01J37/02 ,  H01L21/265

CPC classification number: H01J37/026

Abstract: An ion implantation equipment for implanting ion beam into an implanting target characterized in that an electrons are induced to the direction of an ion beam being injected to said implanting target, and a predetermined bias voltage is applied between a plasma generation chamber and Faraday.

公开(公告)号：US4992661A

公开(公告)日：1991-02-12

申请号：US233016

申请日：1988-08-17

Applicant: Hifumi Tamura ,  Yoshinori Ikebe ,  Katsuhiko Muroyama ,  Hiroyuki Sumiya

Inventor： Hifumi Tamura ,  Yoshinori Ikebe ,  Katsuhiko Muroyama ,  Hiroyuki Sumiya

IPC: H01J37/02 ,  H01J37/20 ,  H05F3/02

CPC classification number: B82Y15/00 ,  H01J37/026 ,  H01J37/20 ,  H05F3/02

Abstract: A method of neutralizing an accumulated charge on a surface of a specimen which is examined in a scanning electron microscope (SEM) or a scanning ion microprobe mass analyzer (IMA), utilizes an electrically conductive thin film deposited on a part of the specimen surface. The charge is due to irradiation by a primary charged particle beam from the SEM or IMA. The thin film is made conductivity with a specimen mount mounting the specimen, and the irradiating range of the primary beam covers at least a part of the thin film. Thus, the accumulated charge can be neutralized, thereby a resolution of the SEM being improved due to applying higher accelerating voltage for the primary beam, and measured data of higher reliability being obtained in the IMA.

Abstract translation: 在扫描电子显微镜（SEM）或扫描离子微探针质量分析仪（IMA）中检查的样品表面积累的电荷的方法利用沉积在试样表面的一部分上的导电性薄膜。 电荷是由于来自SEM或IMA的初级带电粒子束的照射引起的。 该薄膜通过安装样本的样品座安装成导电性，并且初级束的照射范围覆盖薄膜的至少一部分。 因此，可以中和累积电荷，从而由于对主光束施加较高的加速电压而改善了SEM的分辨率，并且在IMA中获得了更高可靠性的测量数据。