公开(公告)号：US20220162756A1

公开(公告)日：2022-05-26

申请号：US17525426

申请日：2021-11-12

Applicant: Applied Materials, Inc.

Inventor： David K. CARLSON ,  Stephen MOFFATT

IPC: C23C16/48 ,  C23C16/52 ,  C23C14/54 ,  C23C14/34

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

公开(公告)号：US20170221751A1

公开(公告)日：2017-08-03

申请号：US15501148

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Brian H. BURROWS ,  Lance A. SCUDDER ,  David K. CARLSON ,  Kashif MAQSOOD

IPC: H01L21/687

CPC classification number: H01L21/68785 ,  C23C14/50 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/68721 ,  H01L21/68771

Abstract: A substrate carrier for an epitaxy chamber is described that has an elongated base member supporting two substrate supports in an angled relationship and a center substrate support between the two substrate supports. The center substrate support has one or more openings at which a substrate is positioned for processing, enabling both sides of the substrate to be processed concurrently.

公开(公告)号：US20180163307A1

公开(公告)日：2018-06-14

申请号：US15835615

申请日：2017-12-08

Applicant: Applied Materials, Inc.

Inventor： David K. CARLSON

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

Abstract: Implementations described herein generally relate to systems, methods and an apparatus used for delivery of chemical precursors, and more particularly to an ampoule for containing chemical precursors. Implementations described herein generally relate to systems, methods and an apparatus used for delivery of chemical precursors, and more particularly to an ampoule for containing chemical precursors. In one implementation, an apparatus for generating a chemical precursor used in a vapor deposition processing system is provided. The apparatus comprises canister comprising a sidewall, a top, and a bottom surface encompassing an interior volume therein, an adhesion layer disposed over an outside surface of the sidewall and bottom surface, a thermally conductive coating disposed over the adhesion layer, an insulator layer disposed over the thermally conductive coating, wherein the thermally conductive coating over the bottom surface remains exposed and an inlet port and an outlet port in fluid communication with the interior volume.

公开(公告)号：US20180005856A1

公开(公告)日：2018-01-04

申请号：US15707810

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg V. SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

公开(公告)号：US20160068955A1

公开(公告)日：2016-03-10

申请号：US14822689

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  Zhiyuan YE ,  Satheesh KUPPURAO

IPC: C23C16/455 ,  C30B25/14

CPC classification number: C23C16/45565

Abstract: Embodiments provided herein generally relate to an apparatus for gas delivering in a semiconductor process chamber. The apparatus may be a gas distribution plate that has a plurality of through holes and a plurality of blind holes formed therein. Process gases are provided into a processing volume of the semiconductor process chamber through the through holes of the gas distribution plate. The blind holes are utilized to control the temperature of the gas distribution plate using a phase change material.

Abstract translation: 本文提供的实施例通常涉及用于在半导体处理室中输送气体的装置。 该装置可以是具有形成在其中的多个通孔和多个盲孔的气体分配板。 通过气体分配板的通孔将工艺气体提供到半导体处理室的处理体积中。 盲孔用于使用相变材料控制气体分配板的温度。

公开(公告)号：US20150050753A1

公开(公告)日：2015-02-19

申请号：US14461191

申请日：2014-08-15

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. SRINIVASAN ,  Atif M. NOORI ,  David K. CARLSON

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/67011 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Abstract translation: 本公开的实施方式一般涉及在基板上形成膜的方法和装置。 更具体地，本公开的实施方案涉及用于晶体膜的异质外延生长的方法和装置。 在一个实施方案中，提供了在衬底上的应变松弛缓冲层（SRB）层的异质外延沉积的方法。 该方法包括在不同的衬底上外延沉积缓冲层，快速加热缓冲层以使缓冲层松弛，快速冷却缓冲层，并确定缓冲层是否达到所需的厚度。

公开(公告)号：US20170275777A1

公开(公告)日：2017-09-28

申请号：US15470268

申请日：2017-03-27

Applicant: Applied Materials, Inc.

Inventor： Richard O. COLLINS ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON ,  Mehmet Tugrul SAMIR

IPC: C30B25/12 ,  C23C16/458 ,  C23C16/48

CPC classification number: C30B25/12 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/481

Abstract: Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.

公开(公告)号：US20170108171A1

公开(公告)日：2017-04-20

申请号：US15393341

申请日：2016-12-29

Applicant: Applied Materials, Inc.

Inventor： David K. CARLSON

IPC: F17C13/00 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44

CPC classification number: F17C13/00 ,  C23C16/4412 ,  C23C16/45557 ,  C23C16/52 ,  F16L55/027 ,  F17C1/00 ,  F17C2221/014 ,  F17C2221/016 ,  F17D1/02 ,  Y10T137/0396 ,  Y10T137/2931

Abstract: In one embodiment, a pressure control assembly includes a cylindrical hollow body having an opening to receive a ballast gas, a first and second flange, and a first and second cone. The first flange is coupled to a first end of the body, and a second flange is coupled to an opposing end of the body. The first cone is coupled to the first flange, and the second cone is coupled to the second flange. A method for controlling pressure in a chamber includes measuring a pressure of the chamber and a pressure of an exhaust system coupled to the chamber. The method includes dynamically adjusting the pressure in the exhaust system in order to adjust the pressure in the chamber, by creating a first pressure drop that is greater than a second pressure drop in the exhaust system.

公开(公告)号：US20160033070A1

公开(公告)日：2016-02-04

申请号：US14550723

申请日：2014-11-21

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  James Francis MACK ,  Kin Pong LO ,  Zhiyuan YE

IPC: F16L55/00

CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/481

Abstract: Embodiments of the disclosure relate to a perimeter pumping member for a processing chamber. The perimeter pumping member comprises a ring-shaped body having a first curved channel along an arc within the ring-shaped body, a first inner channel connecting a first region of the first curved channel to a first region of an inner surface of the ring-shaped body, a plurality of second inner channels connecting a second region of the first curved channel to a second region of the inner surface, and a first outer channel connecting the first region of the first curved channel to an outer surface of the ring-shaped body, wherein the second inner channels are each sized such that, when a fluid is pumped out of the perimeter pumping member via the first outer channel, the fluid flows through the first inner channel and the second inner channels at a uniform flow rate.

Abstract translation: 本公开的实施例涉及用于处理室的周边泵送构件。 周边泵送构件包括环形体，其具有沿环形体内的弧形的第一弯曲通道，将第一弯曲通道的第一区域连接到环形体的内表面的第一区域的第一内部通道， 多个第二内部通道，将第一弯曲通道的第二区域连接到内表面的第二区域;以及第一外部通道，其将第一弯曲通道的第一区域连接到环形体的外表面 其中所述第二内部通道的尺寸设计成使得当流体经由所述第一外部通道从所述周边泵送构件泵出时，所述流体以均匀的流速流过所述第一内部通道和所述第二内部通道。

公开(公告)号：US20140199056A1

公开(公告)日：2014-07-17

申请号：US14132215

申请日：2013-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

Abstract translation: 本发明的实施例涉及一种圆顶组件。 圆顶组件包括上拱顶，其包括中心窗，以及在中心窗的圆周处接合中心窗的上周缘，其中中心窗的内表面上的切线穿过中心窗的交点 并且上周缘相对于周缘凸缘的平面上表面成大约8°至大约16°的​​角度，下圆顶包括下周边凸缘和将下周边凸缘连接到中心开口的底部， 其中穿过底部和下部周边凸缘的交叉点的底部外表面上的切线相对于下部周边凸缘的平坦底面成约8°至约16°的​​角度。