公开(公告)号：US20210280391A1

公开(公告)日：2021-09-09

申请号：US16812144

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Matthew SPULLER ,  Dongming IU

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/46 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to apparatus, systems and methods for managing organic compounds in thermal processing chambers. A gas line can be in fluid communication with the thermal processing chamber and an exhaust pump can be coupled to the thermal processing chamber by an exhaust conduit and controlled by an effluent flow control valve. The apparatus includes a sampling line with an organic compound sensor coupled to the exhaust conduit. The organic compound sensor can be in communication with a control module which can control operating parameters for processing a substrate.

公开(公告)号：US20140255013A1

公开(公告)日：2014-09-11

申请号：US14175821

申请日：2014-02-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Joseph M. RANISH ,  Oleg SEREBRYANOV ,  Dongming IU

IPC: H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: The embodiments described herein generally relate to a flexible standoff for use with a lamphead assembly in a thermal processing chamber. In one embodiment, the lamphead assembly can include a lamphead with one or more fixed lamphead positions, a lamp bulb, a lamp base with a standoff contact adaptor and a flexible standoff capable of attaching and positioning the lamp assembly. The flexible standoff can include a socket configured to receive a lamp base of a lamp assembly, a housing configured to position a lamp bulb of a lamp assembly in thermal connection with a processing chamber, a contact adaptor configured to electrically connect to a power supply and a conductive material to electrically connect the socket and the contact adaptor.

Abstract translation: 本文描述的实施例通常涉及用于与热处理室中的灯头组件一起使用的柔性支座。 在一个实施例中，灯头组件可以包括具有一个或多个固定灯头位置的灯头，灯泡，具有支座接触适配器的灯座和能够附接和定位灯组件的柔性支架。 灵活的支座可以包括被配置为接收灯组件的灯座的插座，被配置成将灯组件的灯泡与处理室热连接的壳体，被配置为电连接到电源的接触适配器， 用于电连接插座和接触适配器的导电材料。

公开(公告)号：US20240178004A1

公开(公告)日：2024-05-30

申请号：US18437058

申请日：2024-02-08

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/321 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/321 ,  H01L21/67098 ,  H01L21/67201

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

公开(公告)号：US20170294333A1

公开(公告)日：2017-10-12

申请号：US15464519

申请日：2017-03-21

Applicant: Applied Materials, Inc.

Inventor： Dongming IU ,  Mehran BEHDJAT

IPC: H01L21/683 ,  G05D7/06 ,  H01J37/32 ,  G05D16/20

CPC classification number: H01L21/6838 ,  G05D7/0635 ,  G05D16/2013 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67288

Abstract: Implementations described herein relate to pressure control for vacuum chuck substrate supports. In one implementation, a process chamber defines a process volume and a vacuum chuck support is disposed within the process volume. A pressure controller is disposed on a fluid flow path upstream from the vacuum chuck and a flow restrictor is disposed on the fluid flow path downstream from the vacuum chuck. Each of the pressure controller and flow restrictor are in fluid communication with a control volume of the vacuum chuck.

公开(公告)号：US20220301904A1

公开(公告)日：2022-09-22

申请号：US17582912

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Ji-Dih HU ,  Chaitanya Anjaneyalu PRASAD ,  Dongming IU ,  Samuel C. HOWELLS ,  Vilen K. NESTOROV

IPC: H01L21/67 ,  H05B47/105

Abstract: Methods, systems, and apparatus provide for optically monitoring individual lamps of substrate processing chambers. In one aspect, the individual lamps are monitored to determine if one or more lamps are in need of replacement. A method includes using one or more camera coupled to a borescope to capture a plurality of images of one or more lamps in a substrate processing chamber. The plurality of images is analyzed to identify a change of mean light pixel intensity in an image reference region associated with each lamp. The method includes generating an alert based on the detection of the mean light pixel intensity change.

公开(公告)号：US20180337075A1

公开(公告)日：2018-11-22

申请号：US15982785

申请日：2018-05-17

Applicant: Applied Materials, Inc.

Inventor： Dongming IU ,  Kartik SHAH ,  Norman L. TAM ,  Matthew SPULLER ,  Jau-Jiun CHEN ,  Kong Lung Samuel CHAN ,  Elizabeth NEVILLE ,  Preetham RAO ,  Abhilash J. MAYUR ,  Gia Pham

IPC: H01L21/67 ,  C23C16/56 ,  C23C16/458 ,  C23C16/455

Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

公开(公告)号：US20180005856A1

公开(公告)日：2018-01-04

申请号：US15707810

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg V. SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

公开(公告)号：US20240352588A1

公开(公告)日：2024-10-24

申请号：US18379028

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kai WU ,  Dongming IU ,  Mehran BEHDJAT

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4587 ,  C23C16/45574 ,  C23C16/4586

Abstract: A method and apparatus for processing a substrate are described herein. The methods and apparatus described enable a chemical vapor deposition (CVD) chamber to process substrates (also referred to as wafers herein) at different temperatures. The processing chamber includes a chamber body, a substrate support disposed within the chamber body and having a top surface, a plurality of substrate lift pins disposed through the substrate support, and a shadow ring lift assembly. The shadow ring lift assembly is operable to raise and lower a shadow ring positioned above or level with the top surface of the substrate support.

公开(公告)号：US20230238269A1

公开(公告)日：2023-07-27

申请号：US17581678

申请日：2022-01-21

Applicant: Applied Materials, Inc.

Inventor： Wolfgang R. ADERHOLD ,  Dongming IU

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68785 ,  H01L21/68742 ,  H01L21/67109 ,  H01L21/68721

Abstract: The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

公开(公告)号：US20230128128A1

公开(公告)日：2023-04-27

申请号：US17569238

申请日：2022-01-05

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Dongming IU ,  Shashank SHARMA ,  Eric R. RIESKE ,  Michael P. KAMP

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/321

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.