公开(公告)号：US20250096045A1

公开(公告)日：2025-03-20

申请号：US18965312

申请日：2024-12-02

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Ala MORADIAN ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Vilen K. NESTOROV ,  Zhiyuan YE ,  Bindusagar MARATH SANKARATHODI ,  Maxim D. SHAPOSHNIKOV ,  Surendra Singh SRIVASTAVA ,  Zhepeng CONG ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU ,  Balakrishnam R. JAMPANA

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

公开(公告)号：US20250066918A1

公开(公告)日：2025-02-27

申请号：US18943136

申请日：2024-11-11

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi Oo MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  B23K26/00 ,  B23K26/03 ,  B23K26/06 ,  B23K26/08 ,  B23K26/12 ,  B23K26/352 ,  C23C16/52 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20240112945A1

公开(公告)日：2024-04-04

申请号：US18539507

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20240021444A1

公开(公告)日：2024-01-18

申请号：US18074239

申请日：2022-12-02

Applicant: Applied Materials, Inc.

Inventor： Manjunath SUBBANNA ,  Ala MORADIAN ,  Errol Antonio C. SANCHEZ ,  Zuoming ZHU ,  Peydaye Saheli GHAZAL ,  Martin Jeffrey SALINAS ,  Aniketnitin PATIL ,  Raja Murali DHAMODHARAN ,  Shu-Kwan LAU

IPC: H01L21/67 ,  H01L21/20 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  H01L21/20 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67739

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

公开(公告)号：US20190127851A1

公开(公告)日：2019-05-02

申请号：US16170255

申请日：2018-10-25

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi O. MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/352 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

公开(公告)号：US20180005856A1

公开(公告)日：2018-01-04

申请号：US15707810

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg V. SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

公开(公告)号：US20160010208A1

公开(公告)日：2016-01-14

申请号：US14741080

申请日：2015-06-16

Applicant: Applied Materials, Inc.

Inventor： Yi-Chiau HUANG ,  Zuoming ZHU

IPC: C23C16/458

CPC classification number: C23C16/458 ,  C23C16/4585

Abstract: Embodiments described herein generally relate to an apparatus for depositing materials on a substrate. The apparatus includes a substrate support assembly. The substrate support assembly includes a susceptor and a substrate support ring disposed on the susceptor. The substrate support ring has a first surface for receiving the substrate and a second surface opposite the first surface. The second surface includes at least three protrusions and each protrusion has a tip that is in contact with the susceptor. The substrate support ring is comprised of a material having poor thermal conductivity, and the contact area between the substrate support ring and the susceptor is minimized, resulting in minimum unwanted heat conduction from the susceptor to the edge of the substrate.

Abstract translation: 本文描述的实施例通常涉及用于在衬底上沉积材料的装置。 该装置包括基板支撑组件。 基板支撑组件包括设置在基座上的基座和基板支撑环。 基板支撑环具有用于接收基板的第一表面和与第一表面相对的第二表面。 第二表面包括至少三个突起，并且每个突起具有与基座接触的尖端。 衬底支撑环由具有差的热导率的材料组成，并且衬底支撑环和基座之间的接触面积被最小化，导致从基座到衬底的边缘的最小不希望的热传导。

公开(公告)号：US20250149350A1

公开(公告)日：2025-05-08

申请号：US18500724

申请日：2023-11-02

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Zuoming ZHU

IPC: H01L21/67 ,  H01L21/02

Abstract: Embodiments of the present disclosure relate to multi-flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for semiconductor manufacturing includes a chamber body and one or more heat sources configured to heat the processing volume. The chamber body includes a processing volume, a plurality of inject passages formed in the chamber body and arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes a first arcuate support, a second arcuate support spaced from the first arcuate support, and a plate supported by the second arcuate support, the plate includes a plurality of openings formed therein.

公开(公告)号：US20250132154A1

公开(公告)日：2025-04-24

申请号：US18491584

申请日：2023-10-20

Applicant: Applied Materials, Inc.

Inventor： Chen-Ying WU ,  Abhishek DUBE ,  Zuoming ZHU

IPC: H01L21/02 ,  C30B25/16 ,  C30B29/52 ,  H01L27/088

Abstract: The present disclosure relates to semiconductor processing methods for anisotropic film growth. The method includes heating a substrate positioned in a processing chamber. The method includes flowing one or more process gases over the substrate. The one or more process gases include trichlorosilane (TCS) and hydrochloric acid. The method includes depositing one or more layers on one or more fins on the substrate. The deposition of the one or more layers includes forming the one or more layers at a first growth rate along a first dimension and a second growth rate along a second dimension, and the second growth rate is faster than the first growth rate.

公开(公告)号：US20240044004A1

公开(公告)日：2024-02-08

申请号：US18381543

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi Oo MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

CPC classification number: C23C16/46 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68785 ,  B23K26/0006 ,  B23K26/128 ,  B23K26/0604 ,  B23K26/034 ,  B23K26/08 ,  C23C16/52 ,  H01L21/68742 ,  B23K26/352 ,  H01L21/6719 ,  B23K26/127 ,  B23K26/126 ,  B23K26/032 ,  B23K26/123 ,  H01L21/68757

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.