公开(公告)号：US20160033070A1

公开(公告)日：2016-02-04

申请号：US14550723

申请日：2014-11-21

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  James Francis MACK ,  Kin Pong LO ,  Zhiyuan YE

IPC: F16L55/00

CPC classification number: H01L21/67115 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/481

Abstract: Embodiments of the disclosure relate to a perimeter pumping member for a processing chamber. The perimeter pumping member comprises a ring-shaped body having a first curved channel along an arc within the ring-shaped body, a first inner channel connecting a first region of the first curved channel to a first region of an inner surface of the ring-shaped body, a plurality of second inner channels connecting a second region of the first curved channel to a second region of the inner surface, and a first outer channel connecting the first region of the first curved channel to an outer surface of the ring-shaped body, wherein the second inner channels are each sized such that, when a fluid is pumped out of the perimeter pumping member via the first outer channel, the fluid flows through the first inner channel and the second inner channels at a uniform flow rate.

Abstract translation: 本公开的实施例涉及用于处理室的周边泵送构件。 周边泵送构件包括环形体，其具有沿环形体内的弧形的第一弯曲通道，将第一弯曲通道的第一区域连接到环形体的内表面的第一区域的第一内部通道， 多个第二内部通道，将第一弯曲通道的第二区域连接到内表面的第二区域;以及第一外部通道，其将第一弯曲通道的第一区域连接到环形体的外表面 其中所述第二内部通道的尺寸设计成使得当流体经由所述第一外部通道从所述周边泵送构件泵出时，所述流体以均匀的流速流过所述第一内部通道和所述第二内部通道。

公开(公告)号：US20150368830A1

公开(公告)日：2015-12-24

申请号：US14737974

申请日：2015-06-12

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Kin Pong LO ,  Edric TONG ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45563 ,  C30B25/08 ,  Y10T428/218

Abstract: Embodiments of the disclosure relate to a one-piece injector assembly. The injector assembly includes a plurality of channels for introducing process gas into a processing chamber while keeping the gas flow of each channel separate from the gas flow in each other channel. In addition, embodiments of the disclosure relate to upper and lower liners accommodating the one-piece injector assembly, methods for installing the injector assembly, and a processing chamber utilizing the one-piece injector assembly.

Abstract translation: 本公开的实施例涉及一体式喷射器组件。 喷射器组件包括多个通道，用于将处理气体引入处理室，同时保持每个通道的气流与每个通道中的气流隔开。 此外，本公开的实施例涉及容纳一体式喷射器组件的上部衬垫和下部衬套，用于安装喷射器组件的方法以及利用一体式喷射器组件的处理室。

公开(公告)号：US20250132147A1

公开(公告)日：2025-04-24

申请号：US18922507

申请日：2024-10-22

Applicant: Applied Materials, Inc.

Inventor： Jae Young PARK ,  Wei LIU ,  Minghang LI ,  Moon Hee SEO ,  Dileep Venkata Sai VADLADI ,  Sahil TAHILIANI ,  Sandip NIYOGI ,  Dimitrios PAVLOPOULOS ,  Amit JAIN ,  Vladimir NAGORNY ,  Victor CALDERON ,  Edric TONG ,  Rene GEORGE

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  H01J37/32

Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

公开(公告)号：US20210175115A1

公开(公告)日：2021-06-10

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20180366363A1

公开(公告)日：2018-12-20

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20150368829A1

公开(公告)日：2015-12-24

申请号：US14745979

申请日：2015-06-22

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Schubert S. CHU ,  Nyi O. MYO ,  Paul BRILLHART ,  Yi-Chiau HUANG ,  Zuoming ZHU ,  Kevin Joseph BAUTISTA ,  Kartik SHAH ,  Edric TONG ,  Xuebin LI ,  Zhepeng CONG ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/12

CPC classification number: C30B25/12 ,  C23C16/4586

Abstract: In one embodiment, a susceptor for a thermal processing chamber is provided. The susceptor includes a base having a front side and a back side made of a thermally conductive material opposite the front side, wherein the base includes a peripheral region surrounding a recessed area having a thickness that is less than a thickness of the peripheral region, and a plurality of raised features protruding from one or both of the front side and the back side.

Abstract translation: 在一个实施例中，提供了用于热处理室的基座。 感受体包括具有与前侧相反的导热材料制成的前侧和后侧的基部，其中，所述基部包括围绕具有小于周边区域的厚度的凹部的凹部的周边区域，以及 从前侧和后侧的一个或两个突出的多个凸起特征。

公开(公告)号：US20180066382A1

公开(公告)日：2018-03-08

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  James Francis MACK ,  Zhiyuan YE ,  Kartik SHAH ,  Errol Antonio C. Sanchez ,  David K. CARLSON ,  Satheesh KUPPURAO ,  Joseph M. RANISH

IPC: C30B25/14 ,  C30B25/10 ,  C30B25/08 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US20160133504A1

公开(公告)日：2016-05-12

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Kartik SHAH ,  Anhthu NGO ,  Karthik RAMANATHAN ,  Nitin PATHAK ,  Nyi O. MYO ,  Paul BRILLHART ,  Richard O. COLLINS ,  Kevin Joseph BAUTISTA ,  Edric TONG ,  Zhepeng CONG ,  Anzhong CHANG ,  Kin Pong LO ,  Manish HEMKAR

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  H01L21/67115

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract translation: 本公开的实施方式一般涉及用于半导体衬底的热处理的基座。 在一个实施方式中，基座包括围绕并联接到内部区域的第一边缘和设置在内边缘和第一边缘之间的第二边缘。 第二边缘包括具有形成在其中的多个切口的成角度的支撑表面，并且成角度的支撑表面相对于内部区域的顶部表面倾斜。

公开(公告)号：US20150340266A1

公开(公告)日：2015-11-26

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract translation: 在一个实施例中，提供了用于热处理的基座。 基座包括围绕并连接到内部盘的外缘，外缘具有内边缘和外边缘。 所述感受器还包括一个或多个结构，用于当所述基底由所述基座支撑时减小基底和所述基座之间的接触表面积。 所述一个或多个结构中的至少一个结合到靠近外缘的内边缘的内部盘。

公开(公告)号：US20150233016A1

公开(公告)日：2015-08-20

申请号：US14613186

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  James Francis MACK ,  Zhiyuan YE ,  Kartik SHAH ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON ,  Satheesh KUPPURAO ,  Joseph M. RANISH

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67115

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

Abstract translation: 本文提供的实施方案通常涉及用于将气体输送到半导体处理室的装置。 外延半导体处理室的上部石英圆顶具有形成在其中的多个孔，前体气体通过上部圆顶的孔设置在腔室的处理容积中。 气体输送管从圆顶的孔延伸到法兰盘，在该法兰盘中管耦合到气体输送管线。 气体输送装置使得气体能够通过石英上部圆顶被输送到衬底上方的处理体积。