公开(公告)号：US20170130359A1

公开(公告)日：2017-05-11

申请号：US15415982

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC: C30B25/10 ,  C30B25/16 ,  C30B25/12 ,  H01L21/67 ,  C23C16/48 ,  C23C16/52 ,  G01J5/10 ,  G01J5/00 ,  C30B25/08 ,  C23C16/458

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

公开(公告)号：US20150368830A1

公开(公告)日：2015-12-24

申请号：US14737974

申请日：2015-06-12

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Kin Pong LO ,  Edric TONG ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45563 ,  C30B25/08 ,  Y10T428/218

Abstract: Embodiments of the disclosure relate to a one-piece injector assembly. The injector assembly includes a plurality of channels for introducing process gas into a processing chamber while keeping the gas flow of each channel separate from the gas flow in each other channel. In addition, embodiments of the disclosure relate to upper and lower liners accommodating the one-piece injector assembly, methods for installing the injector assembly, and a processing chamber utilizing the one-piece injector assembly.

Abstract translation: 本公开的实施例涉及一体式喷射器组件。 喷射器组件包括多个通道，用于将处理气体引入处理室，同时保持每个通道的气流与每个通道中的气流隔开。 此外，本公开的实施例涉及容纳一体式喷射器组件的上部衬垫和下部衬套，用于安装喷射器组件的方法以及利用一体式喷射器组件的处理室。

公开(公告)号：US20160336205A1

公开(公告)日：2016-11-17

申请号：US15220974

申请日：2016-07-27

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Joseph M. RANISH ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Zuoming ZHU

IPC: H01L21/67 ,  H05B3/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  F27B17/0025 ,  F27D5/0037 ,  H05B3/0047

Abstract: The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

Abstract translation: 本文描述的实施例通常涉及在热处理室中具有吸收上表面的灯头组件。 在一个实施例中，处理室包括上部结构，下部结构，将上部结构连接到下部结构的基部环，设置在上部结构和下部结构之间的基板支撑，设置在基板支撑下方的下部结构， 灯头，其定位成靠近下部结构，其中形成有一个或多个固定的灯头位置，所述灯头包括靠近所述下部结构的第一表面和与所述第一表面相对的第二表面，其中所述第一表面包括吸收涂层和一个或多个灯 每个组件包括辐射发生源并且与所述一个或多个固定灯头位置相关联地定位。

公开(公告)号：US20240112945A1

公开(公告)日：2024-04-04

申请号：US18539507

申请日：2023-12-14

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785 ,  C23C16/4585

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20160319428A1

公开(公告)日：2016-11-03

申请号：US14750322

申请日：2015-06-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Balasubramanian RAMACHANDRAN ,  Shih Chung CHEN ,  Kevin A. PAPKE ,  Lei ZHOU ,  Jing ZHOU

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/4404 ,  C23C16/45565

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process chamber includes: a chamber body and a lid assembly defining a processing volume within the process chamber; a substrate support disposed within the processing volume to support a substrate; and a showerhead having a first surface including a plurality of gas distribution holes disposed opposite and parallel to the substrate support, wherein the showerhead is fabricated from aluminum and includes an aluminum oxide coating along the first surface, wherein the aluminum oxide coating has a thickness of about 0.0001 to about 0.002 inches. In some embodiments, the showerhead may further have at least one of a roughness of about 10 to about 300μ-in Ra, or an emissivity (ε) of about 0.20 to about 0.80. The process chamber may be a thermal atomic layer deposition (ALD) chamber.

Abstract translation: 本文提供了用于处理衬底的方法和设备。 在一些实施例中，处理室包括：室主体和限定处理室内的处理容积的盖组件; 设置在所述处理体积内以支撑衬底的衬底支撑件; 以及具有第一表面的喷头，所述第一表面包括与所述基板支撑件相对并平行设置的多个气体分配孔，其中所述喷头由铝制成并且包括沿着所述第一表面的氧化铝涂层，其中所述氧化铝涂层的厚度为 约0.0001至约0.002英寸。 在一些实施例中，喷头还可以具有在Ra中约10至约300μ的粗糙度或约0.20至约0.80的发射率（ε）中的至少一种。 处理室可以是热原子层沉积（ALD）室。

公开(公告)号：US20140057455A1

公开(公告)日：2014-02-27

申请号：US14043505

申请日：2013-10-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Yoshitaka YOKOTA ,  Norman L. TAM ,  Balasubramanian RAMACHANDRAN ,  Martin John RIPLEY

IPC: H01L21/02

CPC classification number: H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/28247 ,  H01L21/31662 ,  H01L21/32

Abstract: A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

Abstract translation: 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。

公开(公告)号：US20210175115A1

公开(公告)日：2021-06-10

申请号：US17183146

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20180366363A1

公开(公告)日：2018-12-20

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US20150368829A1

公开(公告)日：2015-12-24

申请号：US14745979

申请日：2015-06-22

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Schubert S. CHU ,  Nyi O. MYO ,  Paul BRILLHART ,  Yi-Chiau HUANG ,  Zuoming ZHU ,  Kevin Joseph BAUTISTA ,  Kartik SHAH ,  Edric TONG ,  Xuebin LI ,  Zhepeng CONG ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/12

CPC classification number: C30B25/12 ,  C23C16/4586

Abstract: In one embodiment, a susceptor for a thermal processing chamber is provided. The susceptor includes a base having a front side and a back side made of a thermally conductive material opposite the front side, wherein the base includes a peripheral region surrounding a recessed area having a thickness that is less than a thickness of the peripheral region, and a plurality of raised features protruding from one or both of the front side and the back side.

Abstract translation: 在一个实施例中，提供了用于热处理室的基座。 感受体包括具有与前侧相反的导热材料制成的前侧和后侧的基部，其中，所述基部包括围绕具有小于周边区域的厚度的凹部的凹部的周边区域，以及 从前侧和后侧的一个或两个突出的多个凸起特征。

公开(公告)号：US20180138031A1

公开(公告)日：2018-05-17

申请号：US15871688

申请日：2018-01-15

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0262 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

Abstract: Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.