公开(公告)号：US20200274027A1

公开(公告)日：2020-08-27

申请号：US16792312

申请日：2020-02-17

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Yu-Chen Kuo ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Yao-Tang Li ,  Tung-Lin Chuang ,  Tsung-Syun Huang ,  Jing-En Huang

IPC: H01L33/10 ,  H01L33/64 ,  H01L33/40

Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.