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公开(公告)号：US11342488B2
公开(公告)日：2022-05-24
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US10734551B2
公开(公告)日：2020-08-04
申请号：US16659548
申请日：2019-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20200075821A1
公开(公告)日：2020-03-05
申请号：US16531148
申请日：2019-08-05
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Yan-Ting Lan , Chih-Ming Shen , Jing-En Huang
IPC: H01L33/60 , H01L33/36 , H01L33/62 , H01L33/14 , H01L25/075
Abstract: A light emitting diode chip including an epitaxy stacked layer, first and second electrodes and a first reflective layer is provided. The epitaxy stacked layer includes first-type and second-type semiconductor layers and a light-emitting layer. The first and second electrodes are respectively electrically connected to the first-type and second-type semiconductor layers. An orthogonal projection of the light-emitting layer on the first-type semiconductor layer is misaligned with an orthogonal projection of the first electrode on the first-type semiconductor layer. The first reflective layer is disposed on the epitaxy stacked layer, the first and second electrodes. An orthogonal projection of the first reflective layer on the second-type semiconductor layer is misaligned with an orthogonal projection of the second electrode on the second-type semiconductor layer. Furthermore, a light emitting diode device is also provided.
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公开(公告)号：US10453999B2
公开(公告)日：2019-10-22
申请号：US15981855
申请日：2018-05-16
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
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公开(公告)号：US20180130926A1
公开(公告)日：2018-05-10
申请号：US15727545
申请日：2017-10-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Sheng-Tsung Hsu , Yu-Chen Kuo , Chih-Ming Shen , Tung-Lin Chuang , Tsung-Syun Huang , Jing-En Huang
CPC classification number: H01L33/382 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.
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Patent Agency Ranking
公开(公告)号：US20170309787A1
公开(公告)日：2017-10-26
申请号：US15644969
申请日：2017-07-10
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
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7.发明授权公开(公告)号：US09705045B2
公开(公告)日：2017-07-11
申请号：US15045488
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
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公开(公告)号：US11508877B2
公开(公告)日：2022-11-22
申请号：US16826298
申请日：2020-03-23
Applicant: Genesis Photonics Inc.
Inventor： Tung-Lin Chuang , Yi-Ru Huang , Yu-Chen Kuo , Chih-Ming Shen , Tsung-Syun Huang , Jing-En Huang
Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer. Furthermore, a manufacturing method of the red light emitting diode is also provided.
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公开(公告)号：US20180337310A1
公开(公告)日：2018-11-22
申请号：US16049771
申请日：2018-07-30
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting
Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
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公开(公告)号：US20160329461A1
公开(公告)日：2016-11-10
申请号：US15135573
申请日：2016-04-22
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/36 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/465 , H01L33/60
Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
Abstract translation: 本发明提供一种包括第一类型半导体层，发光层，第二类型半导体层，第一电极，第二电极，布拉格反射器结构，导电层和绝缘图案的LED。 第一电极和第二电极位于布拉格反射器结构的同一侧。 导电层设置在布拉格反射器结构和第二类型半导体层之间。 绝缘图案设置在导电层和第二类型半导体层之间。 每个绝缘层具有面向第二类型半导体层的第一表面，背离第二类型半导体层的第二表面和倾斜表面。 倾斜表面连接第一表面和第二表面，并且相对于第一表面和第二表面倾斜。
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