公开(公告)号：US20130320209A1

公开(公告)日：2013-12-05

申请号：US13873725

申请日：2013-04-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyasu SHICHI ,  Satoshi TOMIMATSU ,  Noriyuki KANEOKA ,  Kaoru UMEMURA ,  Koji ISHIGURO

IPC: H01J37/26

CPC classification number: H01J37/261 ,  H01J37/20 ,  H01J37/3045 ,  H01J2237/08 ,  H01J2237/20207 ,  H01J2237/24528 ,  H01J2237/28 ,  H01J2237/31713 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: An ion beam processing apparatus includes an ion beam irradiation optical system that irradiates a rectangular ion beam to a sample on a first sample stage, an electron beam irradiation optical system that irradiates an electron beam to the sample, and a second sample stage to hold a test piece, extracted from the sample. The ion beam can be tilted by rotating the second sample stage about a tilting axis. A controller controls the width of skew of an intensity profile representing an edge of the rectangular ion beam in a direction perpendicular to a first direction in which the tilting axis of the second sample stage is projected on the second sample stage surface so that the width will be smaller than the width of skew of an intensity profile representing another edge of the ion beam in a direction parallel to the first direction.

Abstract translation: 一种离子束处理装置，包括：离子束照射光学系统，其将矩形离子束照射到第一样品台上的样品，向样品照射电子束的电子束照射光学系统;以及第二样品台， 试样，从样品中提取。 离子束可以通过使第二样品台围绕倾斜轴旋转来倾斜。 控制器控制表示矩形离子束在与第二样品台的倾斜轴投射到第二样品台表面上的第一方向垂直的方向上的强度分布的偏斜宽度，使得宽度将 小于在平行于第一方向的方向上表示离子束的另一边缘的强度分布的偏斜宽度。

公开(公告)号：US20130284593A1

公开(公告)日：2013-10-31

申请号：US13926352

申请日：2013-06-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Satoshi TOMIMATSU ,  Kaoru UMEMURA ,  Noriyuki KANEOKA ,  Koji ISHIGURO

IPC: C23C14/34

CPC classification number: C23C14/3442 ,  H01J27/10 ,  H01J37/08 ,  H01J37/28 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/0807 ,  H01J2237/0825 ,  H01J2237/0827 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder, a gas tube, a gas volume control valve, and a stop valve.

Abstract translation: 一种与电子部件的横截面观察技术有关的离子束加工和观察方法，通过使用离子束加工样品的电子部件和能够减少填充加工孔的时间的带电粒子束处理器 在填充区域具有高度的平整度。 观察装置能够切换用于用于观察样品的气体离子束的种类来加工样品的气体离子束的种类。 为了实现用于样品加工的气体离子束的种类和用于样品观察的气体离子束的种类之间的切换，使用至少两个气体引入系统，每个系统具有气瓶，气体管， 气体量控制阀和截止阀。

公开(公告)号：US20160071687A1

公开(公告)日：2016-03-10

申请号：US14786446

申请日：2014-04-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miki TSUCHIYA ,  Yasuhira NAGAKUBO ,  Satoshi TOMIMATSU

IPC: H01J37/20 ,  G01N1/42 ,  B25J7/00 ,  H01J37/28 ,  H01J37/30

CPC classification number: H01J37/20 ,  B25J7/00 ,  G01N1/42 ,  G01N2001/2873 ,  H01J37/28 ,  H01J37/30 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/208 ,  H01J2237/2801 ,  H01J2237/30461 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: The present invention enables a sample to be observed in a clean state directly after preparation of a final observation surface when preparing a sample for observing a material that is sensitive to heat. The present invention is a method of preparing a sample using a charged particle beam device including a microprobe having a cooling mechanism, a first sample holder having a mechanism for retaining a sample in a cooled state, and a stage into which the microprobe and the first sample holder can be introduced, the method including cutting a bulk-shaped sample piece from the sample on the first sample holder retained in a cooled state; adhering the sample piece to a distal end of the microprobe that is cooled to a fixed temperature and transferring the sample piece to a second sample holder for thin film observation retained in a cooled state, which is different from the first sample holder, within a vacuum chamber of the charged particle beam device; separating the sample piece that has been transferred to the second sample holder from the microprobe and thin film processing the sample piece to a thickness that is less than the thickness during cutting; and observing the sample piece after the thin film processing.

Abstract translation: 本发明使得在制备用于观察对热敏感的材料的样品时，在制备最终观察表面之后，可以直接在清洁状态下观察样品。 本发明是一种使用带电粒子束装置制备样品的方法，所述带电粒子束装置包括具有冷却机构的微探针，具有用于将样品保持在冷却状态的机构的第一样品保持器和所述微探针和第一 可以引入样品保持器，该方法包括从保持在冷却状态的第一样品保持器上的样品切割块状样品; 将样品块粘附到被冷却到固定温度的微探针的远端，并将样品片转移到第二样品保持器以进行薄膜观察，在与真空中的第一样品保持器不同的冷却状态下保持 带电粒子束装置的腔室; 将从所述微探针转移到所述第二样品保持器的样品片和将所述样品片处理的薄膜分离成小于切割时的厚度的厚度; 并在薄膜处理后观察样品。