公开(公告)号：US20130087704A1

公开(公告)日：2013-04-11

申请号：US13624607

申请日：2012-09-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Tohru ISHITANI ,  Yoichi OSE ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Tomihiro HASHIZUME ,  Muneyuki FUKUDA

IPC: H01J37/285 ,  H01J27/26

CPC classification number: H01J37/285 ,  B82Y15/00 ,  H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/09 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/0458 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/0835 ,  H01J2237/1501 ,  H01J2237/188 ,  H01J2237/24514

Abstract: A gas field ionization ion source (GFIS) is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. It may be possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it may be possible to reduce the physical vibration of the cooling means. Consequently, it may be possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS.

Abstract translation: 气体电离离子源（GFIS）的特征在于，提取电极的孔径可以被设置为至少两个不同的值中的任何一个，或者从发射极的顶点到引出电极的距离可以被设置为 至少两个不同的值。 此外，固体氮用于冷却。 可能不仅使发散的离子通过提取电极的孔径，而且代表差分泵浦，减小孔径的直径。 此外，可以减小冷却装置的物理振动。 因此，可以提供高度稳定的GFIS和装备有这种GFIS的扫描带电粒子显微镜。

公开(公告)号：US20200294776A1

公开(公告)日：2020-09-17

申请号：US15932307

申请日：2015-08-20

Applicant: Hitachi High Technologies Corporation

Inventor： Yoshimi KAWANAMI ,  Atsushi KOBARU ,  Tomihiro HASHIZUME ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA

IPC: H01J37/32 ,  H01J37/08 ,  H01J37/28 ,  H01J27/26

Abstract: An ion beam device according to the present invention suppresses the fluctuation of an ion emission current by cleaning the inside of a chamber without entailing wear damage to an emitter electrode. The ion beam device includes a GFIS including an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein. The GFIS includes an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode. A pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

公开(公告)号：US20170352517A1

公开(公告)日：2017-12-07

申请号：US15514735

申请日：2015-09-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Yoshimi KAWANAMI ,  Hiroyuki MUTO

IPC: H01J27/26 ,  H01J37/08 ,  H01J37/18 ,  H01J37/28

CPC classification number: H01J27/26 ,  H01J37/08 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/0807

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

公开(公告)号：US20170076902A1

公开(公告)日：2017-03-16

申请号：US15361642

申请日：2016-11-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Masahiro YAMAOKA ,  Noriaki ARAI

IPC: H01J27/26

CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

Abstract: An ion beam device according to the present invention includes a gas field ion source including an emitter tip supported by an emitter base mount, a ionization chamber including an extraction electrode and being configured to surround the emitter tip, and a gas supply tube. A center axis line of the extraction electrode overlaps or is parallel to a center axis line of the ion irradiation light system, and a center axis line passing the emitter tip and the emitter base mount is inclinable with respect to a center axis line of the ionization chamber. Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Abstract translation: 根据本发明的离子束装置包括气体离子源，其包括由发射极基座支撑的发射极尖端，包括引出电极并被配置为围绕发射极尖端的电离室和气体供应管。 引出电极的中心轴线与离​​子照射光系统的中心轴线重叠或平行，并且通过发射极尖端和发射极基座的中心轴线相对于电离的中心轴线是可倾斜的 房间。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

公开(公告)号：US20190051491A1

公开(公告)日：2019-02-14

申请号：US16074601

申请日：2016-02-05

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shinichi MATSUBARA ,  Hiroyasu SHICHI ,  Tomihiro HASHIZUME ,  Yoshimi KAWANAMI

IPC: H01J37/285 ,  H01J27/02 ,  H01J37/08 ,  G02B21/00

Abstract: An H3+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H3+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

公开(公告)号：US20140319370A1

公开(公告)日：2014-10-30

申请号：US14328754

申请日：2014-07-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Norihide SAHO ,  Masahiro YAMAOKA ,  Noriaki ARAI

IPC: H01J27/02 ,  H01J37/26

CPC classification number: H01J27/26 ,  H01J27/022 ,  H01J37/023 ,  H01J37/067 ,  H01J37/08 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/2803

Abstract: An ion beam device according to the present invention includes a gas field ion source (1) including an emitter tip (21) supported by an emitter base mount (64), a ionization chamber (15) including an extraction electrode (24) and being configured to surround the emitter tip (21), and a gas supply tube (25). A center axis line of the extraction electrode (24) overlaps or is parallel to a center axis line (14A) of the ion irradiation light system, and a center axis line (66) passing the emitter tip (21) and the emitter base mount (64) is inclinable with respect to a center axis line of the ionization chamber (15). Accordingly, an ion beam device including a gas field ion source capable of adjusting the direction of the emitter tip is provided.

Abstract translation: 根据本发明的离子束装置包括气体离子源（1），其包括由发射极基座（64）支撑的发射极尖端（21），包括引出电极（24）的电离室（15） 构造成围绕发射器尖端（21），以及气体供应管（25）。 引出电极（24）的中心轴线与离​​子照射光系统的中心轴线（14A）重叠或平行，通过发射极尖端（21）和发射极基座 （64）相对于所述电离室（15）的中心轴线是可倾斜的。 因此，提供了包括能够调节发射极尖端的方向的气体场离子源的离子束装置。

公开(公告)号：US20190295802A1

公开(公告)日：2019-09-26

申请号：US16439005

申请日：2019-06-12

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyasu SHICHI ,  Shinichi MATSUBARA ,  Yoshimi KAWANAMI ,  Hiroyuki MUTO

IPC: H01J27/26 ,  H01J37/28 ,  H01J37/18 ,  H01J37/08

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

公开(公告)号：US20170229277A1

公开(公告)日：2017-08-10

申请号：US15501584

申请日：2015-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Shinichi MATSUBARA ,  Hiroyasu SHICHI ,  Yoshimi KAWANAMI ,  Tomihiro HASHIZUME

IPC: H01J37/08 ,  H01J37/18 ,  H01J37/28

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/022 ,  H01J2237/0807 ,  H01J2237/1825

Abstract: A gas field ionization source in which an ion beam current is stable for a long time is achieved in an ion beam apparatus equipped with a field ionization source that supplies gas to a chamber, ionizes the gas, and applies the ion beam to a sample. The ion beam apparatus includes an emitter electrode having a needle-like extremity; a chamber inside which the emitter electrode is installed; a gas supply unit that supplies the gas to the chamber; a cooling unit that is connected to the chamber and cools the emitter electrode; a discharge type exhaust unit that exhausts gas inside the chamber; and a trap type exhaust unit that exhausts gas inside the chamber. The exhaust conductance of the discharge type exhaust unit is larger than the total exhaust conductance of the trap type exhaust unit.

公开(公告)号：US20160225575A1

公开(公告)日：2016-08-04

申请号：US15021350

申请日：2014-10-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki MUTO ,  Yoshimi KAWANAMI ,  Hiroyasu SHICHI ,  Shinichi MATSUBARA

IPC: H01J37/08 ,  H01J37/147 ,  H01J37/18 ,  H01J37/285

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/1474 ,  H01J37/18 ,  H01J37/285 ,  H01J37/3005 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807 ,  H01J2237/28

Abstract: The objective of the present invention is to provide an ion beam device capable of forming a nanopyramid stably having one atom at the front end of an emitter tip even when the cooling temperature is lowered in order to observe a sample with a high signal-to-noise ratio. In the present invention, the ion beam device, wherein an ion beam generated from an electric field-ionized gas ion source is irradiated onto the sample to observe or process the sample, holds the temperature of the emitter tip at a second temperature higher than a first temperature for generating the ion beam and lower than room temperature, sets the extraction voltage to a second voltage higher than the first voltage used when generating the ion beam, and causes field evaporation of atoms at the front end of the emitter tip, when forming the nanopyramid having one atom at the front end of the emitter tip.

Abstract translation: 本发明的目的是提供一种即使在降低冷却温度以观察具有高信噪比的样品的情况下，也能够在发射极尖端的前端稳定地形成具有一个原子的纳米锥体的离子束装置， 噪音比。 在本发明中，将从电场离子化的气体离子源产生的离子束照射到样品上以观察或处理样品的离子束装置，将发射极尖端的温度保持在高于 用于产生离子束并低于室温的第一温度，将提取电压设置为高于产生离子束时使用的第一电压的第二电压，并且当形成时，引起发射极尖端前端的原子的场蒸发 纳米锥体在发射极尖端的前端具有一个原子。