公开(公告)号：US5747819A

公开(公告)日：1998-05-05

申请号：US739816

申请日：1996-10-30

Applicant: Mamoru Nakasuji ,  Hiroyasu Simizu

Inventor： Mamoru Nakasuji ,  Hiroyasu Simizu

IPC: H01J37/305 ,  H01J37/317 ,  H01L21/027

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/15 ,  H01J2237/31788

Abstract: A charged particle beam transfer device exhibiting a low level of aberration is disclosed. The device comprises a first deflector for deflecting a charged particle beam, that has passed through a subfield on a reticle, such that the beam passes through the optical axis, or at least the center, of a projection lens. To such end, the first deflector deflects the beam a first angle of deflection relative to an optical axis of the device. The device also comprises a second deflector to deflect the beam, after having passed through the projection lens, at a second angle of deflection that is opposite the first angle of deflection. Thus, the beam is guided to a region on a substrate surface corresponding to the particular subfield on the reticle.

Abstract translation: 公开了一种具有低水平像差的带电粒子束传递装置。 该装置包括用于偏转带电粒子束的第一偏转器，该带电粒子束已经通过掩模版上的子场，使得光束通过投影透镜的光轴或至少中心。 为此，第一偏转器相对于装置的光轴使光束偏转第一偏转角。 该装置还包括第二偏转器，用于在已经穿过投影透镜之后以与第一偏转角相反的第二偏转角度偏转光束。 因此，光束被引导到对应于掩模版上的特定子场的衬底表面上的区域。

公开(公告)号：US06545282B2

公开(公告)日：2003-04-08

申请号：US10126995

申请日：2002-04-19

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: G20K510

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3177

Abstract: Charged-particle-beam (CPB) microlithography apparatus and methods are disclosed that produce reduced blur resulting from the Coulomb effect, without having to reduce exposure current, exposure accuracy, or throughput. An exemplary apparatus is configured to expose regions (“exposure units” or “subfields”) each having a maximal lateral dimension of at least 1 mm. The beam half-angle (half width at half maximum of the distribution of beam intensity) is 1 mrad or less.

Abstract translation: 公开了充电粒子束（CPB）微光刻设备和方法，其产生由库仑效应引起的模糊，而不必降低曝光电流，曝光精度或通量。 示例性设备被配置为暴露每个具有至少1mm的最大横向尺寸的区域（“曝光单元”或“子场”）。 光束半角（光束强度分布的半值宽度）为1mrad或更小。

公开(公告)号：US6087668A

公开(公告)日：2000-07-11

申请号：US966262

申请日：1997-11-07

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: G03F7/20 ,  H01J37/302 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/304

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/30455 ,  H01J2237/31764

Abstract: Apparatus and methods are disclosed for projecting a mask pattern, divided into multiple mask subfields, onto a substrate at high resolution using a charged-particle beam (CPB). At least some of the mask subfields comprise "minimum-linewidth regions". To expose each mask subfield, a CPB (e.g., electron beam) is directed onto the mask subfield. The image of the mask subfield is projected by lens systems onto a respective transfer subfield on the substrate. Deflectors deflect the CPB to the selected mask subfield and to the corresponding transfer subfield on the substrate. A memory stores data concerning the locations of minimum-linewidth regions in the selected mask subfields and the corresponding amount of deflection of the beam for each corresponding mask subfield. An arithmetical processor calculates required focal lengths of the projection lens systems, based on the locations of the minimum-linewidth regions and on the amount of beam deflection required for each respective mask subfield, required to minimize the degree of blur of the minimum linewidth features of the respective mask subfield in the respective transfer subfield. A controller controls the amount of power delivered to the projection lens systems so that their focal lengths agree with the calculation results. The calculations can be performed in advance of exposure by a separate calculator and the resulting data stored in a memory for later recall and use by the controller.

Abstract translation: 公开了用于使用带电粒子束（CPB）以高分辨率将掩模图案划分成多个掩模子场的装置和方法。 至少一些掩模子场包括“最小线宽区域”。 为了露出每个掩模子场，将CPB（例如，电子束）引导到掩模子场上。 掩模子场的图像由透镜系统投影到衬底上的相应转印子场上。 偏转器将CPB偏转到所选择的掩模子场和衬底上相应的传输子场。 存储器存储关于所选屏蔽子场中的最小线宽区域的位置的数据以及用于每个对应掩模子场的波束的相应偏移量。 算术处理器基于最小线宽区域的位置和每个相应掩模子场所需的光束偏转量来计算投影透镜系统的所需焦距，这是为了最小化最小线宽特征的模糊度所需的 相应的转移子场中的掩模子场。 控制器控制输送到投影透镜系统的功率量，使得它们的焦距与计算结果一致。 计算可以在单独的计算器曝光之前进行，并将得到的数据存储在存储器中，以供以后调用和由控制器使用。

公开(公告)号：US06627899B2

公开(公告)日：2003-09-30

申请号：US09320199

申请日：1999-05-26

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: H01J37141

CPC classification number: H01J37/141 ,  G21K1/093 ,  H01J37/3007 ,  H01J2237/3175

Abstract: Magnetic lenses and coils for magnetic lenses, charged-particle-beam (CPB) optical systems and pattern-transfer apparatus comprising such magnetic lenses, and manufacturing methods for such lenses, systems, and apparatus are disclosed. In the coils for magnetic lenses, the number of coil turns per unit length is adjusted so that the axial magnetic field at the ends of the coils more closely approximates an ideal magnetic field. In another example, a coil for a magnetic lens comprises two or more subcoils. The currents in the subcoils or the products of current and coil turns for respective subcoils are adjusted to approximate a selected magnetic field, such as to correct or at least reduce magnetic field “droop” at the ends of the coil. Magnetic lenses including such coils and a yoke are provided as well as CPB pattern-transfer apparatus using these magnetic lenses.

Abstract translation: 公开了用于磁性透镜的磁性透镜和线圈，带电粒子束（CPB）光学系统和包括这种磁性透镜的图案转印装置，以及用于这种透镜，系统和装置的制造方法。 在用于磁性透镜的线圈中，调整每单位长度的线圈匝数，使得线圈端部处的轴向磁场更接近理想的磁场。 在另一示例中，用于磁性透镜的线圈包括两个或更多个子线圈。 辅助线圈中的电流或相应辅助线圈的电流和线圈匝的电流被调整为近似所选择的磁场，例如校正或至少减小线圈末端的磁场“下垂”。 提供包括这种线圈和磁轭的磁性透镜以及使用这些磁性透镜的CPB图案转印装置。

公开(公告)号：US6049084A

公开(公告)日：2000-04-11

申请号：US49602

申请日：1998-03-27

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: G21K5/04 ,  G03F7/20 ,  G21K1/093 ,  H01J37/141 ,  H01J37/147 ,  H01J37/153 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01J3/20 ,  G21K1/08

CPC classification number: G21K1/093 ,  H01J37/153 ,  H01J37/3007 ,  H01J2237/3175

Abstract: Charged-particle-beam optical systems are disclosed exhibiting reduced aberrations. Such a system comprises a symmetric magnetic doublet type projection lens system and deflectors. An imaginary Z-axis is superimposed on the optical axis with an origin at an image-crossover point. Excitation of the deflectors and lenses is controlled by a controller so that the ratio of G.sub.1 (Z) to G.sub.2 (-M.multidot.Z) is substantially equal to the ratio of (-M) to 1 (i.e., G.sub.1 (Z):G.sub.2 (-M.multidot.Z)=(-M):1), and the deflection trajectory of the charged-particle beam intersects with the optical axis at a crossover Z.sub.c, where M is the magnification of the lens system, G.sub.1 (Z) is the distribution of the deflective magnetic field formed on the object side of the crossover, and G.sub.2 (Z) is the distribution of the deflective magnetic field formed on the image side of the crossover.

Abstract translation: 公开了具有减小的像差的带电粒子束光学系统。 这种系统包括一个对称的磁双头型投影透镜系统和偏转器。 假想的Z轴以原点在图像交叉点上叠加在光轴上。 偏转器和透镜的激发由控制器控制，使得G​​1（Z）与G2（-MxZ）的比例基本上等于（-M）与1的比率（即G1（Z）：G2（ - MxZ）=（ - M）：1），并且带电粒子束的偏转轨迹在交叉Zc处与光轴相交，其中M是透镜系统的倍率，G1（Z） 在交叉点的物体侧形成偏转磁场，G2（Z）是形成在交叉点的像侧的偏转磁场的分布。

公开(公告)号：US6008498A

公开(公告)日：1999-12-28

申请号：US940741

申请日：1997-09-30

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: G03F7/20 ,  H01J37/147 ,  H01J37/21 ,  H01J37/302 ,  H01J37/305 ,  H01L21/027 ,  H01J37/153

CPC classification number: H01J37/302 ,  H01J2237/30461 ,  H01J2237/3175

Abstract: The imaging characteristics of focal-point position, image rotation, and magnification of a projection system of a charged-particle-beam image-transfer apparatus are corrected by correction lenses positioned between a first projection lens and a second projection lens. The driving currents of the correction lenses are determined by solving a system of three linear equations with three unknowns, whose coefficients are the correction amounts for the three imaging characteristics of the projection system produced by the three correction lenses when they are driven by the unit Ampere-turn, and the target correction amounts for the three imaging characteristics. More correction lenses can be employed than imaging characteristics to be corrected, with Ampere-turn values selected from among those that satisfy the corresponding equations. Also, the driving currents of one or more projection lenses can be varied to allow the projection lenses to operate as correction lenses. Also, three correction lenses can be provided for each of three characteristics to be corrected. The correction for each characteristic can be performed individually, so as to avoid substantial change in the other two characteristics, and this may be done iteratively to approach the ideal correction.

Abstract translation: 通过位于第一投影透镜和第二投影透镜之间的校正透镜校正带电粒子束图像转印装置的投影系统的焦点位置，图像旋转和放大率的成像特性。 校正透镜的驱动电流通过求解具有三个未知数的三个线性方程组的系统来确定，其系数是由三个校正透镜在由单位安培驱动时由三个校正透镜产生的三个成像特性的校正量 并且针对三个成像特征的目标校正量。 可以使用更多的校正透镜来比较要校正的成像特性，其中安培转值选自满足相应等式的那些。 此外，可以改变一个或多个投影透镜的驱动电流，以允许投影透镜作为校正透镜来操作。 此外，可以为要校正的三个特性中的每一个提供三个校正透镜。 可以单独执行每个特性的校正，以避免其他两个特性的实质变化，并且这可以迭代地进行以接近理想校正。

公开(公告)号：US06906336B2

公开(公告)日：2005-06-14

申请号：US10251571

申请日：2002-09-20

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: G03F7/20 ,  H01J37/21 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/14 ,  G03C5/00 ,  A61N5/00 ,  G21G5/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F7/2037 ,  H01J37/3174 ,  H01J2237/31796 ,  Y10S430/143

Abstract: Exposure methods are disclosed for use in charged-particle-beam microlithography and that yield decreased blur and variation in blur within individual exposure fields (subfields) of a pattern. Blur at a location on the optical axis increases monotonically with increased shift in the focal point of a subfield image on the substrate. In contrast, blur at a subfield edge exhibits comparatively little change over a limited range in focal-point shift, and exhibits sharply increased change as the shift in focal point exceeds a threshold. Variation in blur within individual subfields decreases monotonically with increased shift in the focal point. Consequently, by changing the focal point during exposure, within a range in which maximum blur within the subfield is within an acceptable range, Δblur is decreased more than conventionally, thereby increasing the uniformity of blur within the projected subfield.

Abstract translation: 公开了用于带电粒子束微光刻中的曝光方法，并且在图案的单独曝光场（子场）内产生模糊和模糊变化。 在光轴上的位置处的模糊随着衬底上的子场图像的焦点位移的增加而单调增加。 相比之下，在子场边缘处的模糊在焦点偏移的有限范围内显示出相对较小的变化，并且随着焦点偏移超过阈值，显示出急剧增加的变化。 单个子场中模糊的变化随着焦点的偏移增加而逐渐减小。 因此，通过在曝光期间改变焦点，在子场内的最大模糊在可接受范围内的范围内，Deltablur比常规地减少，从而增加了投影子场内的模糊均匀性。

公开(公告)号：US06635881B2

公开(公告)日：2003-10-21

申请号：US09843592

申请日：2001-04-26

Applicant: Atsushi Yamada ,  Hiroyasu Simizu ,  Koichi Kamijo

Inventor： Atsushi Yamada ,  Hiroyasu Simizu ,  Koichi Kamijo

IPC: H01J3714

CPC classification number: G21K1/093

Abstract: Charged-particle-beam (CPB) optical systems (especially projection-lens systems for use in CPB microlithography apparatus) are disclosed that exhibit excellent control of geometric aberration and the Coulomb effect while exhibiting low combined aberration and blur. As the column length of the projection-lens system is increased, geometric aberration is reduced but the Coulomb effect increases, which degrades overall optical characteristics. Conversely, as the column length is decreased, the Coulomb effect is reduced but geometric aberration increases, which degrades overall optical characteristics. Hence, the projection-lens system, exhibiting a magnification of 1/M and having a column length (distance in mm between reticle and wafer) of 250×M0.63±10% (wherein 0

Abstract translation: 公开了带电粒子束（CPB）光学系统（特别是用于CPB微光刻设备的投影透镜系统），其表现出优异的几何像差控制和库仑效应，同时呈现低的组合像差和模糊。 随着投影透镜系统的列长度增加，几何像差减小，但是库仑效应增加，这降低了总的光学特性。 相反，当柱长度减小时，库仑效应降低，但是几何像差增加，这降低了整体光学特性。 因此，投影透镜系统的倍率为1 / M，并且具有250xM <0.63>±10％（其中0

公开(公告)号：US06608313B2

公开(公告)日：2003-08-19

申请号：US09765530

申请日：2001-01-19

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: H01J37304

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G21K1/08 ,  H01J37/304 ,  H01J37/3174 ,  H01J2237/30472 ,  H01J2237/31757

Abstract: Methods and devices are disclosed for aligning a beam-propagation axis with the center of an aperture, especially an aperture configured to limit the aperture angle of the charged particle beam. In an exemplary method, an alignment-measurement aperture is provided at an imaging plane of a charged-particle-beam (CPB) optical system, and a beam detector is downstream of the alignment-measurement aperture. A scanning deflector is energized to cause the beam to be scanned in two dimensions, transverse to an optical axis, over the aperture. Meanwhile, the beam detector obtains an image of beam intensity in the two dimensions. In the image a maximum-intensity point is identified, corresponding to the propagation axis. Based on the two-dimensional image, the beam is deflected as required to align the propagation axis with the aperture center.

Abstract translation: 公开了用于将光束传播轴与孔的中心对准的方法和装置，特别是被配置为限制带电粒子束的孔径角的孔。 在示例性方法中，在带电粒子束（CPB）光学系统的成像平面处提供对准测量孔，并且光束检测器位于对准测量孔径的下游。 扫描偏转器被通电以使光束在光轴上横向于光轴的二维扫描。 同时，光束检测器获得二维光束强度的图像。 在图像中，识别出与传播轴对应的最大强度点。 基于二维图像，根据需要将光束偏转以将传播轴与孔径中心对准。

公开(公告)号：US06621090B2

公开(公告)日：2003-09-16

申请号：US09901766

申请日：2001-07-09

Applicant: Hiroyasu Simizu

Inventor： Hiroyasu Simizu

IPC: H01J3706

CPC classification number: H01J37/063 ,  H01J2237/153 ,  H01J2237/3175

Abstract: Electron-beam sources are disclosed that exhibit substantially reduced spherical aberration compared to conventional sources. In a beam produced by the cathode of such a source, axially propagating electrons are subjected to a lens action by voltage applied to a Wehnelt electrode and an extraction electrode. The cathode includes a peripheral portion that is “drawn back” (displaced along the axis of the source away from the beam-propagation direction) relative to a center portion of the cathode. With such a cathode, the percentage of dimensions of the crossover involved in spherical aberration of the crossover is reduced. This improves the uniformity of beam current at a lithographic substrate and minimizes location-dependency of the aperture angle. Since the Wehnelt voltage can be reduced, positional changes in the electrical field at the cathode surface are reduced, and the distribution of electrons in the beam propagating from the cathode surface is made more uniform than conventionally.