公开(公告)号：US09991088B2

公开(公告)日：2018-06-05

申请号：US15550182

申请日：2015-02-18

Applicant: Hitachi, Ltd.

Inventor： Yasuhiro Shirasaki ,  Momoyo Enyama ,  Hiroya Ohta

IPC: H01J37/153 ,  H01J37/145 ,  H01J37/14

CPC classification number: H01J37/153 ,  H01J37/14 ,  H01J37/145

Abstract: An aberration corrector includes a mirror that corrects an aberration of a charged particle beam, a beam separator, and a bypass optical system in the beam separator. The beam separator includes an entrance of the charged particle beam and an exit from which the charged particle beam is emitted to an objective lens, and separates an incident trajectory from the entrance to the mirror and a reflection trajectory from the mirror to the exit from each other by deflecting the charged particle beam in an ON state. The bypass optical system is disposed at a position at which the trajectory of the charged particle beam bypasses when the beam separator is in the ON state, and the trajectory of the charged particle beam passes when the beam separator is in an OFF state, and controls the charged particle beam so that objective lens optical conditions in a trajectory via the mirror and a trajectory passing through the bypass optical system coincide with each other.

公开(公告)号：US09966225B2

公开(公告)日：2018-05-08

申请号：US15329638

申请日：2014-07-28

Applicant: HITACHI, LTD.

Inventor： Daisuke Bizen ,  Makoto Sakakibara ,  Hiroya Ohta ,  Junichi Tanaka

IPC: H01J37/24 ,  H01J37/244 ,  H01J37/26

CPC classification number: H01J37/244 ,  H01J37/222 ,  H01J37/24 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/226

Abstract: A simulation device calculates a detection number of electrons generated by charged particles radiated to a sample by a simulation and generates a simulation image of the sample. The simulation device holds penetration length information (272) in which incidence conditions of the charged particles and a penetration length are associated with each other, sample configuration information (271) which shows a configuration of a sample, and emission electron number information in which the incidence conditions of the charged particles and an emission electron number are associated with each other. The simulation device calculates the number of electrons emitted from a predetermined incidence point, on the basis of incidence conditions at the predetermined incidence point, the penetration length information (272), the sample configuration information (271), and the emission electron number information.

公开(公告)号：US09846133B2

公开(公告)日：2017-12-19

申请号：US14443720

申请日：2012-11-19

Applicant: Hitachi, Ltd.

Inventor： Yoshinobu Kimura ,  Natsuki Tsuno ,  Hiroya Ohta ,  Renichi Yamada ,  Toshiyuki Ohno ,  Yuki Mori

IPC: G01N23/225 ,  H01J37/28 ,  G01N23/22 ,  H01J37/22 ,  H01L21/66 ,  H01J37/285 ,  H01L21/67 ,  H01J37/147 ,  H01L29/16

CPC classification number: G01N23/225 ,  G01N23/2208 ,  H01J37/1474 ,  H01J37/22 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01L21/67288 ,  H01L22/12 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

公开(公告)号：US20150303030A1

公开(公告)日：2015-10-22

申请号：US14443720

申请日：2012-11-19

Applicant: HITACHI, LTD.

Inventor： Yoshinobu Kimura ,  Natsuki Tsuno ,  Hiroya Ohta ,  Renichi Yamada ,  Toshiyuki Ohno ,  Yuki Mori

IPC: H01J37/285 ,  H01J37/147 ,  H01L21/67 ,  H01L21/66 ,  H01L29/16

CPC classification number: G01N23/225 ,  G01N23/2208 ,  H01J37/1474 ,  H01J37/22 ,  H01J37/28 ,  H01J37/285 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817 ,  H01L21/67288 ,  H01L22/12 ,  H01L29/1608 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, said device being capable of applying a positive or negative voltage to the electrode and obtaining images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. First, an image (first image) is obtained using the EH and positive potential conditions. Next, an image (second image) is obtained using the EL and negative potential conditions. Next, an image (third image) is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Abstract translation: 提供了一种检测装置，其高精度地检测并分类表面不匀，步进分批，穿透叶片位错，穿透螺旋位错，基面位错以及在SiC衬底和外延层中形成的堆垛缺陷; 和一个系统。 在使用带电粒子束的检查装置中，使用具有设置在样品和物镜之间的电极的装置，所述装置能够向电极施加正电压或负电压并获得图像。 测量二次电子发射速率，并发现带电粒子的能量EL和EH。 首先，使用EH和正电位条件获得图像（第一图像）。 接下来，使用EL和负电位条件获得图像（第二图像）。 接下来，在与第二图像相同的位置处获得图像（第三图像），并且通过使用EL和正电位条件。

公开(公告)号：US10262830B2

公开(公告)日：2019-04-16

申请号：US15529281

申请日：2014-11-26

Applicant: HITACHI, LTD.

Inventor： Daisuke Bizen ,  Hideo Morishita ,  Michio Hatano ,  Hiroya Ohta

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/10 ,  H01J37/285 ,  H01J37/28 ,  H01J37/05 ,  H01J37/21 ,  H01J37/244

Abstract: To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

公开(公告)号：US09508611B2

公开(公告)日：2016-11-29

申请号：US14911651

申请日：2013-08-14

Applicant: HITACHI, LTD.

Inventor： Yoshinobu Kimura ,  Natsuki Tsuno ,  Hiroya Ohta ,  Renichi Yamada ,  Hirotaka Hamamura ,  Toshiyuki Ohno ,  Hiroyuki Okino ,  Yuki Mori

IPC: H01L21/66 ,  G01R31/265

CPC classification number: H01L22/12 ,  G01R31/265 ,  H01L22/20 ,  H01L22/24

Abstract: In a semiconductor inspection method using a semiconductor inspection device, by selecting an incident energy and a negative potential and scanning an inspection surface of a wafer with primary electrons to detect secondary electrons, a first inspection image is acquired, and a macro defect, stacking faults, a basal plane dislocation and a threading dislocation contained in the first inspection image are discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance. Moreover, by selecting the incident energy and a positive potential and scanning the inspection surface of the wafer with primary electrons to detect the secondary electrons, a second inspection image is acquired, and a threading screw dislocation of a dot-shaped figure contained in the second inspection image is discriminated by image processing based on a threshold value of a signal amount of the secondary electrons determined in advance.

Abstract translation: 在使用半导体检查装置的半导体检查方法中，通过选择入射能量和负电位并扫描具有一次电子的晶片的检查表面以检测二次电子，获得第一检查图像，并且存在宏观缺陷，堆垛层错 通过基于预先确定的二次电子的信号量的阈值的图像处理来判别包含在第一检查图像中的基底位错和穿透位错。 此外，通过选择入射能量和正电位并用一次电子扫描晶片的检查表面以检测二次电子，获得第二检查图像，并且包含在第二电极中的点状图形的螺纹螺钉脱位 基于预先确定的二次电子的信号量的阈值的图像处理来判别检查图像。