ION MILLING DEVICE
    1.
    发明公开
    ION MILLING DEVICE 审中-公开

    公开(公告)号:US20230352263A1

    公开(公告)日:2023-11-02

    申请号:US17791295

    申请日:2020-01-29

    Abstract: An ion milling device which balances high processing speed and a wide processing region with smoothness of a processing surface. The ion milling device includes first to third ion guns that emit unfocused ion beams. An ion beam center of the third ion gun is included in a first plane defined by a normal to a surface of a sample and a mask end, and an ion beam center of the first ion gun and an ion beam center of the second ion gun are included in a second plane. The second plane is inclined toward the mask with respect to the first plane, and an angle formed by the first plane and the second plane is more than 0 degrees and 10 degrees or less. The processing surface of the sample is formed in a region where the emitted ion beams overlap on the surface of the sample.

    ION MILLING DEVICE
    2.
    发明公开
    ION MILLING DEVICE 审中-公开

    公开(公告)号:US20240194443A1

    公开(公告)日:2024-06-13

    申请号:US18286826

    申请日:2021-05-19

    CPC classification number: H01J37/3053 H01J37/08 H01J37/265

    Abstract: Provided is an ion milling device that can dramatically improve processing speed controllability and processing profile reproducibility. The ion milling device includes: an ion gun attached to a vacuum chamber and configured to emit an unfocused ion beam; a sample stand disposed in the vacuum chamber and configured to hold a sample; an ion beam characteristic measurement mechanism configured to measure an ion beam characteristic for estimating a processing profile of the sample processed by the ion beam; and a control unit. A magnetic field generation device is configured to generate a magnetic field in an ionization chamber of the ion gun and includes an electromagnet including an electromagnetic coil and a magnetic path. The control unit controls a value of a current, which is applied to the electromagnetic coil, based on the ion beam characteristic measured by the ion beam characteristic measurement mechanism.

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