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    INFRARED THERMAL SENSOR WITH BEAM WITHOUT THERMOCOUPLE
    1.
    发明申请
    INFRARED THERMAL SENSOR WITH BEAM WITHOUT THERMOCOUPLE 有权
    红外热传感器，带有无热电偶的光束

    公开(公告)号：US20170003172A1

    公开(公告)日：2017-01-05

    申请号：US15107065

    申请日：2014-12-13

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Ben MAES ,  Carl VAN BUGGENHOUT ,  Appolonius Jacobus VAN DER WIEL

    IPC: G01J5/02 ,  G01J5/14

    CPC classification number: G01J5/023 ,  G01J5/0225 ,  G01J5/12 ,  G01J5/14 ,  G01J5/16 ,  G01J2005/123

    Abstract: An infrared thermal sensor for sensing infrared radiation is disclosed. The infrared thermal sensor comprises a substrate and a cap structure together forming a sealed cavity, a membrane arranged in said cavity for receiving infrared radiation (IR) through a window or aperture and a plurality of beams for suspending the membrane. At least one beam has a thermocouple arranged therein or thereon for measuring a temperature difference (ΔT) between the membrane and the substrate, the plurality of beams. Furthermore at least one beam is mechanically supporting the membrane without a thermocouple being present therein or thereon.

    Abstract translation: 公开了一种用于感测红外辐射的红外热传感器。 红外热敏传感器包括一个基片和盖结构，一起形成一个密封的空腔，一个隔膜，布置在所述空腔中，用于通过窗口或孔口接收红外辐射（IR）和多个用于悬挂膜片的光束。 至少一个光束具有布置在其中或其上的热电偶，用于测量膜和基板之间的温度差（ΔT），多个光束。 此外，至少一个梁机械地支撑膜，而不存在其中或之上的热电偶。

    DEVICE AND METHOD FOR ABSOLUTE VOLTAGE MEASUREMENT
    2.
    发明申请
    DEVICE AND METHOD FOR ABSOLUTE VOLTAGE MEASUREMENT 审中-公开

    公开(公告)号：US20200099384A1

    公开(公告)日：2020-03-26

    申请号：US16577822

    申请日：2019-09-20

    Applicant: Melexis Technologies NV

    Inventor： Viktor KASSOVSKI ,  Francois PIETTE ,  Carl VAN BUGGENHOUT

    IPC: H03M1/06 ,  G01R19/32 ,  H03M1/10 ,  H03M1/12

    Abstract: A method and a circuit for measuring an absolute voltage signal, such that the circuit comprises: an A/D convertor, and a controller adapted for: a) obtaining a first digital reference value for a first reference signal having a positive temperature coefficient; b) obtaining a second digital reference value for a second reference signal having a negative temperature coefficient; c) obtaining a raw digital signal value for the signal to be measured, while applying a same reference voltage for step a) to c); and d) calculating the absolute voltage value in the digital domain using a mathematical function of the first and second digital reference value, and the raw digital signal value.

    INFRARED SENSING DEVICES AND METHODS
    3.
    发明申请
    INFRARED SENSING DEVICES AND METHODS 审中-公开

    公开(公告)号：US20180283956A1

    公开(公告)日：2018-10-04

    申请号：US15997836

    申请日：2018-06-05

    Applicant: Melexis Technologies NV

    Inventor： Carl VAN BUGGENHOUT ,  Ben MAES ,  Karel VANROYE ,  Stijn REEKMANS

    IPC: G01J5/06 ,  G01J5/10

    CPC classification number: G01J5/06 ,  G01J5/045 ,  G01J5/10 ,  G01J2005/0048 ,  G01J2005/065 ,  G01J2005/067 ,  G01J2005/106

    Abstract: An infrared sensor assembly for sensing infrared radiation comprises infrared sensing elements and the infrared sensing compensation elements that are different so that, for a same flux on the infrared sensing elements and the infrared sensing compensation elements, the radiation responsive element of the infrared sensing elements absorbs more radiation than the radiation responsive element of the infrared sensing compensation elements, as to receive substantially more radiation than the radiation responsive element of the infrared sensing compensation elements. An output of the sensor array is a subtractive function of a sum of the signals of the plurality of infrared sensing elements and a sum of the signals of the plurality of the infrared sensing compensation elements such that at least linear and/or non-linear parasitic thermal fluxes are at least partly compensated for.

    THERMAL SENSOR DEVICE AND METHOD OF MANUFACTURE THEREOF
    5.
    发明申请
    THERMAL SENSOR DEVICE AND METHOD OF MANUFACTURE THEREOF 有权

    公开(公告)号：US20240369415A1

    公开(公告)日：2024-11-07

    申请号：US18634459

    申请日：2024-04-12

    Applicant: Melexis Technologies NV

    Inventor： Jian CHEN ,  Carl VAN BUGGENHOUT ,  Anastasios PETROPOULOS

    IPC: G01J5/20 ,  G01J5/12 ,  H10N19/00

    Abstract: A thermal sensor device (100) comprises an integrated circuit die (104) having a first mating side (126) and an external side (128) opposite the mating side (126). A sensor-containing die (102) is disposed in spaced relation with the integrated circuit die (104) so that the first mating side (126) faces a second mating side (114), a portion (144) of the sensor-containing die (102) overhanging the integrated circuit die (104). An electrically conductive circuit path (132, 146, 120, 122) extends from a first opposing surface (134) of the first mating side (126) to a second opposing surface of the second mating side (114) and extends further to the overhanging portion (144) so that a portion of the electrically conductive circuit path (132, 146, 120, 122) also overhangs the integrated circuit die (104). An electrical linkage portion (148) electrically couples to the electrically conductive circuit path (132, 146, 120, 122) at the overhanging portion (144) and extends beyond the external side (128) of the integrated circuit die (104).

    SEALED SENSOR DEVICE AND METHOD OF MANUFACTURE THEREOF
    6.
    发明公开
    SEALED SENSOR DEVICE AND METHOD OF MANUFACTURE THEREOF 审中-公开

    公开(公告)号：US20240295443A1

    公开(公告)日：2024-09-05

    申请号：US18592437

    申请日：2024-02-29

    Applicant: Melexis Technologies NV

    Inventor： Jietse VAN THIENEN ,  Carl VAN BUGGENHOUT ,  Stijn REEKMANS

    IPC: G01K1/08 ,  G01K1/26 ,  G01L19/00

    CPC classification number: G01K1/08 ,  G01K1/26 ,  G01L19/0046 ,  G01L19/0092

    Abstract: A sealed sensor device (104) comprising: an internal atmosphere comprising a gas pressurised to a predetermined pressure, the predetermined pressure being below atmospheric pressure when the internal atmosphere is hermetically sealed from ambient. A sensor cavity (214) is also provided having a periphery and is in fluid communication with the internal atmosphere, thereby comprising the gas and the gas having a mean free path at the predetermined pressure associated therewith. A thermopile (256) is disposed in the sensor cavity (214) for detecting a change in pressure of the internal atmosphere and detecting failure of the hermetic seal. A membrane structure (234) disposed within the cavity comprises the thermopile (256). The membrane structure (234) also comprises a heating element, and a shortest distance from substantially any point on the membrane structure (234) to the periphery of the sensor cavity (214) is less than the mean free path of the gas at the predetermined pressure.

    LOW-DRIFT INFRARED DETECTOR
    7.
    发明申请
    LOW-DRIFT INFRARED DETECTOR 审中-公开

    公开(公告)号：US20190154511A1

    公开(公告)日：2019-05-23

    申请号：US16191733

    申请日：2018-11-15

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Carl VAN BUGGENHOUT ,  Karel VANROYE

    IPC: G01J5/02 ,  G01J5/00 ,  G01J5/12 ,  G01J5/22

    CPC classification number: G01J5/0225 ,  G01J5/0003 ,  G01J5/026 ,  G01J5/12 ,  G01J5/22 ,  G01J2005/0048 ,  G01J2005/066 ,  G01J2005/067

    Abstract: A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.

    Packaging of Semiconductor Devices
    9.
    发明申请
    Packaging of Semiconductor Devices 审中-公开
    封装半导体器件

    公开(公告)号：US20160093544A1

    公开(公告)日：2016-03-31

    申请号：US14893139

    申请日：2014-05-23

    Applicant: MELEXIS TECHNOLOGIES NV

    Inventor： Carl VAN BUGGENHOUT

    IPC: H01L23/04 ,  H01L21/52 ,  H01L21/56 ,  H01L23/31

    CPC classification number: H01L23/041 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L21/52 ,  H01L21/56 ,  H01L23/16 ,  H01L23/3142 ,  H01L23/3157 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A packaged semiconductor device comprising a stack including a die comprising a functional circuit, and a cap which is wafer bonded to the die for protecting the functional circuit as well as a mold component for packaging the stack. At least the cap and/or the die comprises at least one groove at least partially in contact with the mold component, for increasing adhesion of the mold component to the stack. A corresponding method for manufacturing such a packaged device also is described.

    Abstract translation: 一种封装的半导体器件，包括具有包括功能电路的管芯的堆叠体，以及晶片结合到管芯以保护功能电路的盖以及用于封装堆叠的模具部件。 至少盖和/或模具包括至少部分地与模具部件接触的至少一个凹槽，用于增加模具部件与堆叠件的粘附。 还描述了用于制造这种封装装置的相应方法。

    THERMAL SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明公开
    THERMAL SENSOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240298543A1

    公开(公告)日：2024-09-05

    申请号：US18587644

    申请日：2024-02-26

    Applicant: Melexis Technologies NV

    Inventor： Carl VAN BUGGENHOUT

    IPC: H10N10/17 ,  H10N10/01 ,  H10N10/13

    CPC classification number: H10N10/17 ,  H10N10/01 ,  H10N10/13

    Abstract: A method of manufacturing a thermal sensor (106) comprises providing a first part (102) of a body of the sensor (106), the first part (102) of the body being configured to define a first part (114) of a chamber (310). A second part (104) of the body of the sensor (106) is also provided, the second part (104) of the body being configured to define a second part (118) of the chamber (310). A getter material (112) is disposed in the first part (114) of the body of the sensor (106), and the first part (102) and the second part (104) of the body of the sensor (106) are brought together so that the first and second parts (102, 104) of the chamber (310) define the chamber (310). The chamber (310) is backfilled with a gas to a pressure greater than 10 mbar, and the first part (102) of the body is bonded to the second part (104) of the body so as to seal hermetically the chamber (310).

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