Abstract:
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Abstract:
An electron gun also has a cathode for emitting electrons, a heater cap which contains a heater for applying the cathode with thermal energy for emitting electrons, a retainer for securing the cathode on the heater cap by clamping the peripheral edge of the cathode onto the heater cap, and a cylindrical Wehnelt supporter. The cylindrical Wehnelt supporter has a Wehnelt electrode for focusing an electron beam that is formed in such a shape that an average angle of the surface thereof with respect to an outermost shell of the electron beam matches a Pierce angle, and three or more heater cap supporters for securely supporting the heater cap at a position at which an electron emitting surface of the cathode and an opening formed through the Wehnelt electrode satisfy a predetermined perveance.
Abstract:
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Abstract:
An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.
Abstract:
An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.
Abstract:
Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly.
Abstract:
Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of quantum information processing (QIP) systems, and more particularly, to provide a cold finger for use with a quantum information processing (QIP) system including a cryostat. The cold finger includes a planar base including a first surface proximate a cooling plate of the cryostat opposite a second surface; a finger including a first end coupled to the second surface of the planar base and a second end configured to engage an ion trap; and an isolation unit positioned above the cooling plate of the cryostat and including a dielectric crystal plate that is configured to isolate the ion trap from electrical noise generated by the cryostat when controlling a temperature of the ion trap.
Abstract:
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Abstract:
Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly.
Abstract:
Certain embodiments described herein are directed to devices that can be used to align the components of a source assembly in a source housing. In some examples, a terminal lens configured to couple to the housing through respective alignment features can be used to retain the source components in a source housing to provide a source assembly.