Invention Grant
- Patent Title: Light emitting diode
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Application No.: US16659548Application Date: 2019-10-21
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Publication No.: US10734551B2Publication Date: 2020-08-04
- Inventor: Yi-Ru Huang , Tung-Lin Chuang , Yan-Ting Lan , Sheng-Tsung Hsu , Chih-Ming Shen , Jing-En Huang , Teng-Hsien Lai , Hung-Chuan Mai , Kuan-Chieh Huang , Shao-Ying Ting , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
- Applicant: Genesis Photonics Inc.
- Applicant Address: TW Tainan
- Assignee: Genesis Photonics Inc.
- Current Assignee: Genesis Photonics Inc.
- Current Assignee Address: TW Tainan
- Agency: JCIPRNET
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/46 ; H01L33/36 ; H01L33/60 ; H01L33/40

Abstract:
The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.
Public/Granted literature
- US20200052159A1 LIGHT EMITTING DIODE Public/Granted day:2020-02-13
Information query
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