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公开(公告)号：KR101131414B1
公开(公告)日：2012-04-03
申请号：KR1020100088688
申请日：2010-09-10
Applicant: 한국과학기술원
Abstract: PURPOSE: A radio frequency device and a method of fabricating the same are provided to reduce the contact resistance of a guard ring contact plug by forming an impurity doping region in the surface of the guard ring. CONSTITUTION: A substrate(102) comprises a first area(102a) and a second part(102b). A semiconductor layer(106) is formed on the first area of the substrate. A buried insulating layer(104) is formed between the substrate and the semiconductor layer. A plurality of inversion blocking layers(120a) is formed on the second region of the substrate. A field insulating layer(125) covers the side of the semiconductor layer and the top side of the inversion blocking layer.
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公开(公告)号：KR101439081B1
公开(公告)日：2014-09-12
申请号：KR1020130020606
申请日：2013-02-26
Applicant: 한국과학기술원
IPC: H04N5/33
Abstract: 본 발명은 메모리를 사용하지 않고 아날로그 회로단에서 자동으로 적외선 이미지 보정이 가능한 적외선 영상데이터 취득용 신호처리 회로 및 방법을 위하여, 적외선을 흡수하면 전기저항이 변화하는 적외선 감지부; 일단이 상기 적외선 감지부의 타단에 전기적으로 연결되고, 적외선을 흡수하기 전에 상기 적외선 감지부의 전기저항이 소정의 기준저항값을 가지도록, 상기 적외선 감지부에 줄열(Joule heat)을 인가할 수 있는, 셀프 히팅부; 상기 셀프 히팅부의 타단의 전압과 기준전압의 차이를 적분하여 적분된 값을 적외선 신호로 출력하는 적분기; 및 일단이 상기 적분기에 전기적으로 연결되고, 상기 적외선 감지부의 전기저항을 상기 소정의 기준저항값으로 유지하도록 상기 적외선 감지부를 히팅 또는 냉각시키기 위하여 상기 적분기의 실시간 출력신호를 비교 및 제어할 수 있는, 피드백 제어부;를 포함하는, 적외선 영상데이터 취득용 신호처리 회로 및 방법을 제공한다.
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公开(公告)号：KR1020140106267A
公开(公告)日：2014-09-03
申请号：KR1020130020606
申请日：2013-02-26
Applicant: 한국과학기술원
IPC: H04N5/33
CPC classification number: H04N5/3651 , G01J5/24 , H04N5/33
Abstract: The present invention provides a circuit and a method for processing a signal for the acquisition of infrared image data which can automatically correct an infrared image in an analog circuit terminal without using a memory. The circuit for processing the signal for the acquisition of the infrared image data comprises: an infrared sensing unit of which electrical resistance varies when absorbing infrared rays; a self-heating unit of which one end is electrically connected to the other end of the infrared sensing unit and which applies Joule heat to the infrared sensing unit so that the electrical resistance of the infrared sensing unit can have a predetermined reference resistance value before absorbing the infrared rays; an integrator which integrates a difference between a voltage of the other end of the self-heating unit and a reference voltage, and outputs an integrated value as an infrared signal; and a feedback control unit of which one end is electrically connected to the integrator, and which compares and controls real-time output signals of the integrator to heat or cool the infrared sensing unit so that the electrical resistance of the infrared sensing unit can maintain the predetermined reference resistance value.
Abstract translation: 本发明提供一种用于处理用于获取红外图像数据的信号的电路和方法，该信号可以在不使用存储器的情况下自动校正模拟电路终端中的红外图像。 用于处理用于获取红外图像数据的信号的电路包括：红外感测单元，其在吸收红外线时电阻变化; 一个自身加热单元，其一端电连接到红外感测单元的另一端，并且对红外线感测单元施加焦耳热，使得红外感测单元的电阻在吸收之前可以具有预定的参考电阻值 红外线; 积分器，其将自发热单元的另一端的电压与参考电压的差积分，并输出积分值作为红外信号; 以及反馈控制单元，其一端电连接到积分器，并且比较和控制积分器的实时输出信号以加热或冷却红外感测单元，使得红外感测单元的电阻可以维持 预定参考电阻值。
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公开(公告)号：KR101388927B1
公开(公告)日：2014-04-25
申请号：KR1020130027538
申请日：2013-03-14
Applicant: 한국과학기술원
IPC: B81C1/00 , H01L21/027
CPC classification number: B81C1/00023 , B81C3/007 , H01L21/0274
Abstract: Provided is a method for producing an MEMS device using an amorphous carbon film as a sacrificial layer. According to an embodiment of the present invention, the method comprises the steps of: producing a bottom structure including metallic patterns; producing an adhesion reinforcing layer that covers the metallic patterns of the bottom structure and includes at least one among an oxide film, a nitride film, a nitrifying film, and an amorphous silicon film; producing an amorphous carbon film as a sacrificial layer on the adhesion reinforcing layer; producing an insulating and supporting layer on the amorphous carbon film; producing via holes formed in order to penetrate through the insulating and supporting layer and amorphous carbon film and make the bottom structure exposed therethrough sequentially by forming an etching protection film on the insulating and supporting layer, by performing only one photolithography procedure, and by etching the insulating and supporting layer and the amorphous carbon film at a time; producing a top structure including a sensor structure on the insulating and supporting layer; producing at least one through-hole that penetrates through the insulating and supporting layer; and removing the amorphous carbon film through the through-hole so that the bottom structure and top structure are disposed to be separated from each other.
Abstract translation: 提供了使用非晶碳膜作为牺牲层来制造MEMS器件的方法。 根据本发明的实施例，该方法包括以下步骤：产生包括金属图案的底部结构; 制造覆盖底部结构的金属图案并且包括氧化膜，氮化物膜，硝化膜和非晶硅膜中的至少一种的粘合增强层; 在粘合增强层上制造作为牺牲层的无定形碳膜; 在无定形碳膜上产生绝缘和支撑层; 产生通孔，以穿透绝缘支撑层和非晶碳膜，并通过仅在一个光刻步骤上形成蚀刻保护膜，使底部结构依次暴露于其中，并通过蚀刻 绝缘和支撑层和无定形碳膜; 在绝缘和支撑层上产生包括传感器结构的顶部结构; 产生穿过绝缘支撑层的至少一个通孔; 并且通过所述通孔去除所述无定形碳膜，使得所述底部结构和顶部结构被设置成彼此分离。
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公开(公告)号：KR1020120054459A
公开(公告)日：2012-05-30
申请号：KR1020100115846
申请日：2010-11-19
Applicant: 한국과학기술원
CPC classification number: H01L21/76251 , H01L21/76224
Abstract: PURPOSE: A method for manufacturing a radio frequency device and a semiconductor device is provided to reduce radio frequency loss by preventing by forming an inversion blocking layer. CONSTITUTION: A complex substrate having a laminating structure of a body, a buried insulating layer(104), and a semiconductor layer is provided. A trench is formed by etching the buried insulating layer and the semiconductor layer. An inversion blocking layer(120) is formed on the body within the trench. A burying protective layer(122) is formed on the inversion blocking layer in order to fill the trench. A first part of the inversion blocking layer of the semiconductor layer outside the trench is eliminated. The burying protective layer and the inversion blocking layer are flattered in order to protect a second part of the inversion blocking layer within the trench through the burying protective layer.
Abstract translation: 目的：提供一种制造射频装置和半导体装置的方法，以通过形成反转阻挡层来防止射频损失。 构成：提供具有本体层叠结构的复合衬底，埋层绝缘层（104）和半导体层。 通过蚀刻掩埋绝缘层和半导体层形成沟槽。 在沟槽内的主体上形成反转阻挡层（120）。 在反转阻挡层上形成埋入保护层（122）以填充沟槽。 沟槽外的半导体层的反转阻挡层的第一部分被消除。 掩埋保护层和反转阻挡层被覆盖以便通过掩埋保护层保护沟槽内的反转阻挡层的第二部分。
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Patent Agency Ranking
公开(公告)号：KR101383918B1
公开(公告)日：2014-04-08
申请号：KR1020130027122
申请日：2013-03-14
Applicant: 한국과학기술원
IPC: G01J5/02
CPC classification number: G01J5/0853 , G01J1/0219 , G01J5/0285 , G01L21/14
Abstract: The present invention relates to a microbolometer type vacuum sensor and an infrared sensor including the same and, more specifically, to a microbolometer type long-range vacuum sensor capable of accurately measuring a vacuum level in a wide vacuum level range and an infrared sensor including the same. The microbolometer type long-range vacuum sensor according to the present invention includes a substrate, and at least one first cell and at least one second cell which are arranged on the substrate and transfers electrical signals according to vacuum levels to the substrate. The microbolometer type long-range vacuum sensor according to the present invention can accurately measure a vacuum level in a wide range using together the first cell which has improved sensitivity at a low vacuum level and the second cell which has improved sensitivity at a high vacuum level.
Abstract translation: 本发明涉及一种微热辐射热计式真空传感器及其红外线传感器，更具体地说，涉及一种能够精确地测量宽真空度范围内的真空度的微测辐射热计型长距离真空传感器，以及包括 相同。 根据本发明的微温度计型远距离真空传感器包括基板，以及布置在基板上的至少一个第一单元和至少一个第二单元，并且根据真空水平将电信号传送到基板。 根据本发明的微热辐射计型远距离真空传感器可以在较低范围内精确地测量在低真空度下具有改进的灵敏度的第一单元和在高真空度下具有改进的灵敏度的第二单元的宽范围内的真空度 。
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公开(公告)号：KR1020120026670A
公开(公告)日：2012-03-20
申请号：KR1020100088688
申请日：2010-09-10
Applicant: 한국과학기술원
Abstract: PURPOSE: A radio frequency device and a method of fabricating the same are provided to reduce the contact resistance of a guard ring contact plug by forming an impurity doping region in the surface of the guard ring. CONSTITUTION: A substrate(102) comprises a first area(102a) and a second part(102b). A semiconductor layer(106) is formed on the first area of the substrate. A buried insulating layer(104) is formed between the substrate and the semiconductor layer. A plurality of inversion blocking layers(120a) is formed on the second region of the substrate. A field insulating layer(125) covers the side of the semiconductor layer and the top side of the inversion blocking layer.
Abstract translation: 目的：提供一种射频装置及其制造方法，以通过在保护环表面形成杂质掺杂区来减小保护环接触插塞的接触电阻。 构成：衬底（102）包括第一区域（102a）和第二部分（102b）。 半导体层（106）形成在基板的第一区域上。 在衬底和半导体层之间形成掩埋绝缘层（104）。 在基板的第二区域上形成多个反转阻挡层（120a）。 场绝缘层（125）覆盖半导体层的侧面和反转阻挡层的顶侧。
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公开(公告)号：KR101547533B1
公开(公告)日：2015-08-27
申请号：KR1020130141902
申请日：2013-11-21
Applicant: 한국과학기술원
IPC: B29C59/02
Abstract: 본발명은미세패턴이형성된구조체를제조하는방법에관한것으로서, 더욱상세하게는고분자몰드를이용한생산성이향상된미세패턴이형성된구조체의제조방법에관한것이다. 본발명에따른미세패턴이형성된구조체의제조방법은, (ㄱ) 표면에패턴이형성된고분자몰드를제조하는단계와, (ㄴ) 상기고분자몰드의패턴내에유동성재료를도포하는단계와, (ㄹ) 2차구조체지지기판을상기고분자몰드의패턴위에배치하는단계와, (ㅁ) 상기유동성재료를경화시켜상기 2차구조체지지기판에부착하는단계와, (ㅂ) 상기 2차구조체지지기판과상기고분자몰드를분리시켜, 상기유동성재료가경화되면서형성된유동성재료경화구조체가부착된 2차구조체지지기판을얻는단계를포함한다. 본발명에따른미세패턴이형성된구조체의제조방법은기포등에의한패턴결함이발생할확률이낮다는장점이있다. 따라서구조의미세화와고밀도화에유리하며수율이높다.
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公开(公告)号：KR1020150059190A
公开(公告)日：2015-06-01
申请号：KR1020130141902
申请日：2013-11-21
Applicant: 한국과학기술원
IPC: B29C59/02
CPC classification number: B29C59/022 , B29C41/22 , B29C59/046 , B29C2059/023 , G03F7/0002
Abstract: 본발명은미세패턴이형성된구조체를제조하는방법에관한것으로서, 더욱상세하게는고분자몰드를이용한생산성이향상된미세패턴이형성된구조체의제조방법에관한것이다. 본발명에따른미세패턴이형성된구조체의제조방법은, (ㄱ) 표면에패턴이형성된고분자몰드를제조하는단계와, (ㄴ) 상기고분자몰드의패턴내에유동성재료를도포하는단계와, (ㄹ) 2차구조체지지기판을상기고분자몰드의패턴위에배치하는단계와, (ㅁ) 상기유동성재료를경화시켜상기 2차구조체지지기판에부착하는단계와, (ㅂ) 상기 2차구조체지지기판과상기고분자몰드를분리시켜, 상기유동성재료가경화되면서형성된유동성재료경화구조체가부착된 2차구조체지지기판을얻는단계를포함한다. 본발명에따른미세패턴이형성된구조체의제조방법은기포등에의한패턴결함이발생할확률이낮다는장점이있다. 따라서구조의미세화와고밀도화에유리하며수율이높다.
Abstract translation: 本发明涉及一种制造具有精细图案的结构的方法，更具体地说，涉及使用聚合物模具提高生产率的精细图案的结构的制造方法，包括以下步骤：（a）制造聚合物模具， 表面有图案; （b）用流体材料在聚合物模具上涂布图案; （d）在所述聚合物模具上设置辅助结构支撑基板; （e）将固化的流体材料附着到二级结构支撑基底; 和（f）将聚合物模具与二级结构支撑基材分离，从而获得附着有通过固化流体材料形成的流体材料的固化结构的第二结构支撑基底，从而具有高产率，同时具有较低的图案可能性 气泡造成的故障，有利于制作微结构和高密度。
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公开(公告)号：KR101408905B1
公开(公告)日：2014-06-19
申请号：KR1020130045874
申请日：2013-04-25
Applicant: 한국과학기술원
Abstract: For a high response MEMS device which is thermally isolated while bending of a pixel is not induced but resistance uniformity is evenly maintained and a method for fabricating the same, the present invention provides a MEMS device comprising a lower structural body comprising a read channel integrated circuit; an upper structural body spaced apart from the lower structural body and having an infrared light detecting unit of which electric resistance changes if absorbing infrared light; and a leg unit for electrically connecting the infrared light detecting unit and the read channel integrated circuit, wherein at least one penetrating hole is provided on the leg unit in order to control thermal time constant and responsiveness.
Abstract translation: 对于不诱导像素的弯曲而被热隔离但是均匀地保持电阻均匀性的高响应MEMS器件及其制造方法，本发明提供一种MEMS器件，其包括下部结构体，该下部结构体包括读取通道集成电路 ; 与下部结构体间隔开的上部结构体，并具有红外光检测单元，其中如果吸收红外光，电阻发生变化; 以及用于电连接红外光检测单元和读通道集成电路的支腿单元，其中至少一个贯穿孔设置在支腿单元上，以便控制热时间常数和响应性。
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