公开(公告)号：JP2001242630A

公开(公告)日：2001-09-07

申请号：JP2001002614

申请日：2001-01-10

Applicant: IBM

Inventor： ANGELOPOULOS MARIE ,  CATHERINA BABICHI ,  ALFRED GRILL ,  SCOTT DAVID HALLE ,  AAPAN PURAVIN MAHOROWARA ,  VISHUNUBUHAI VITTARUBUAI PATEL

IPC: G03F7/11 ,  C23C16/30 ,  C23C16/32 ,  G02B1/10 ,  G02B1/11 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a lithographic structure with plural layers including an RCHX layer containing a material of the formula R:C:H:X (where R is one selected from the group comprising Si, Ge, B, Sn, Fe, Ti and a mixture of these and X is absent or one selected from the group comprising O, N, S and F) as at least one layer and with a layer of an energy active material, a method for producing the structure and a method for utilizing the structure. SOLUTION: The RCHX layer is formed by vapor deposition, the energy active material is patterned to form a pattern and this pattern is transferred to the RCHX layer. The RCHX layer is useful as a hard mask layer, an antireflection layer and a hard mask/antireflection layer.

公开(公告)号：JPH118248A

公开(公告)日：1999-01-12

申请号：JP14913698

申请日：1998-05-29

Applicant: IBM

Inventor： CATHERINA E BAVICH ,  ALESSANDRO CESARE CALLEGARI ,  JULIEN FONTAINE ,  ALFRED GRILL ,  CHRISTOPHER YANES ,  BISHUNUBAHAAI VITTARUBAHAAI PA

IPC: H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To eliminate the reflection of the boundary surface between a resist and an ARC and to drastically improve CD control by making an adjustment for conforming to the optical characteristics of a substrate, and make it useful as a bottom antireflection coating. SOLUTION: A plasma reinforced chemical vapor phase adhesion device 8, used for adhering an amorphous carbon film, includes a reaction chamber 10 and has a throttle valve 11 for isolating the reaction chamber 10 from a vacuum pump. A cathode 19 is electrically connected to an adjustable high-frequency power supply 14, and the impedance between the cathode 19 and the high-frequency power supply 14 is matched by a matching box 13. An amorphous carbon film coating changes the optical constant of the film by changing the process parameters, thus minimizing a reflection factor on the boundary surface between the resist and the substrate and reducing a swing ratio.

公开(公告)号：JPH11150115A

公开(公告)日：1999-06-02

申请号：JP23172998

申请日：1998-08-18

Applicant: IBM

Inventor： CATHERINA E BEIVICH ,  BRUNNER TIMOTHY A ,  ALESSANDRO CAESAR CALEGARI ,  ALFRED GRILL ,  CHRISTOPHER V JARNES ,  BISHUNABAI VITTARUBAI PATEL

IPC: C01B31/00 ,  C23C14/06 ,  G03F7/11 ,  H01L21/027 ,  H01L21/3205

Abstract: PROBLEM TO BE SOLVED: To form a resist which has superior optical purity and high adjustability and consists of a plurality of layers by forming an antireflection film on a substrate through vapor deposition. SOLUTION: After an amorphous carbon film a-C:X:H containing hydrogen and fluoride is stuck to a substrate by plasma-intensified chemical gaseous-phase vapor deposition, a photoresist PR containing silicon is applied to the surface of the carbon film a-C:X:H with a spin coater and baked. Then, after the photoresist PR has been developed with a developing solution, the carbon film a-C:X:H is subjected to reactive ion etching in oxygen plasma. As a result, the carbon film a-C:X:H functions as an ideal thick planarized lower antireflection film in a two-layer resist system for ultraviolet and far-infrared rays and can improve line width control and the performance of an integrated circuit.

公开(公告)号：JPH1174484A

公开(公告)日：1999-03-16

申请号：JP15123098

申请日：1998-06-01

Applicant: IBM

Inventor： ALFRED GRILL ,  DAVID EDWARD KOTEKKI ,  KATHRYN LYN SENGER

IPC: H01L27/10 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To prevent silicon from passing through an electrode in one direction to diffuse and oxygen from passing through the electrode in the other direction to diffuse during a high-temperature treatment of a high-dielectric constant dielectric material by a method wherein a barrier layer containing a large quantity of the oxygen is made to interpose between a noble metal layer and a noble metal silicide layer to form a composite layer structure. SOLUTION: A conductive silicon contributory conductive plug 7 and a dielectric layer 8 are formed on a silicon substrate 9 and a noble metal layer 6 is made to adhere on the regions of these of the plug 7 and the layer 8. The plug 7 is buried in the layer 8, the plug 7 is a doped polvsilicon layer and the layer 8 is an SiO2 layer. After this structure is annealed in an atmosphere containing oxygen, the structure is formed into a composite layer structure incorporating the layer 6. Thereby, the oxygen is deposited on the reaction front surface boundary between a noble metal silicide layer and an unreacted noble metal layer during the annealing, a diffusion barrier layer 5 to prevent the unreacted noble metal layer from being consumed more than that is formed to form a three-layer structure consisting of the layer 6, the noble metal silicide layer 3 and the layer 5 between the layers 6 and 3 and silicon and the oxygen are mutually prevented from being diffused.

公开(公告)号：JPH10242082A

公开(公告)日：1998-09-11

申请号：JP1837998

申请日：1998-01-30

Applicant: IBM

Inventor： PANAYOTIS CONSTANTINO ANDRICAK ,  CYRILLE CABRAL JR ,  ROY CAROTHERS ,  ALFRED GRILL ,  CATHRIN SENJER

IPC: H01L21/288 ,  H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To remove a conductive noble metal plating base from a noble metal patterned electrodeposit region dissimilar to this base, by selecting a multilayered metal material to be alloyed or mixed in the annealing condition. SOLUTION: A structure includes a base 2 having a blanket mat layer of a plating base 1 having electrodeposit features including a noble metal 4 dissimilar to the base plating layer material. The noble metal deposit is electroplated using a mask to be removed later. Selective etching removes the base 1 not alloyed in a region between the features to form a structure. An anneal process is long enough to obtain a good alloy 6 but short enough to prevent the base from becoming excessively dense at the edge of the electrodeposit and the electrodeposit from excessively diffusing laterally in the base region between the features.

公开(公告)号：JPH1041474A

公开(公告)日：1998-02-13

申请号：JP8622397

申请日：1997-04-04

Applicant: IBM

Inventor： LAUR EDMUND ACOSTA ,  JAMES HARTFIEL COMFORT ,  ALFRED GRILL ,  DAVID EDWARD KOTTEKI ,  CATHERINE LYNN SANGER

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To enable a dielectric structure to be formed inside a non-planar capacitor and a ferroelectric memory cell by a method wherein a recess where a dielectric is deposited is demarcated by a gap between a plate electrode and a stacked electrode. SOLUTION: A capacitor structure 100 is composed of a first electrode or a plate electrode 1 and a second electrode or a stacked electrode 2 surrounded with the plate electrode 1. The plate electrode 1 is isolated from the stacked electrode 2 by a narrow gap filled with a capacitor dielectric body 3. A conductive plug 4 buried in a dielectric body 5 is brought into contact with a conductive region 6 on a board 20. A gap can be formed between the plate electrode 1 and the stacked electrode 2 in a final structure or between one or more sacrifice materials and either the plate electrode 1 or the stacked electrode 2. By this setup, the dielectric body 3 is not required to be deposited through a conformal process such as a chemical vapor deposition method.

公开(公告)号：SG115320A1

公开(公告)日：2005-10-28

申请号：SG1998001197

申请日：1998-06-04

Applicant: IBM

Inventor： KATHERINA E BABICH ,  ALESSANDRO CESARE CALLEGARI ,  JULIEN FONTAINE ,  ALFRED GRILL ,  CHRISTOPHER JAHNES ,  VISHNUBHAI VITTHALBHAI PATEL

IPC: H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: Disclosed is vapor deposited BARC and method of preparing tunable and removable antireflective coatings based on amorphous carbon films. These films can be hydrogenated, fluorinated, nitrogenated carbon films. Such films have an index of refraction and an extinction coefficient tunable from about 1.4 to about 2.1 and from about 0.1 to about 0.6, respectively, at UV and DUV wavelengths, in particular 365, 248 and 193 nm. Moreover, the films produced by the present invention can be deposited over device topography with high conformality, and they are etchable by oxygen and/or a fluoride ion etch process. Because of their unique properties, these films can be used to form a tunable and removable antireflective coating at UV and DUV wavelengths to produce near zero reflectance at the resist/BARC coating interface. This BARC greatly improves performance of semiconductor chips.