公开(公告)号：GB2556268A

公开(公告)日：2018-05-23

申请号：GB201801637

申请日：2016-08-02

Applicant: IBM

Inventor： PAUL ANDRY ,  BUCKNELL WEBB ,  CORNELIA KANG-I TSANG

IPC: H01M10/04 ,  H01M2/02 ,  H01M2/08 ,  H01M6/40

Abstract: A microbattery structure (101) for hermetically sealed microbatteries is provided. The microbattery structure (101) includes a first silicon substrate (1001) containing at least one pedestal which houses a cathode material (1601) of a microbattery and at least one depression (1003, 1004) which houses a first sealant material (1301) of the microbattery, the structure further includes a second silicon substrate (201) containing at least one pedestal which houses an anode material (601) of the microbattery and at least one depression (202, 204) which houses a second sealant material (801) of the microbattery. An insulated centerpiece (1401) is bonded to the first sealant material (1301) present in at least two depressions (202,204) on the first silicon substrate (1001). An interlock structure is formed by aligning and superimposing the second silicon substrate (201) on the first silicon substrate (1001) in a mortise and tenon fashion and sealing the two substrates (1001, 201) using a high force.

公开(公告)号：GB2602607B

公开(公告)日：2023-05-17

申请号：GB202205126

申请日：2020-08-19

Applicant: IBM

Inventor： PAUL ANDRY ,  ERIC PETER LEWANDOWSKI ,  DANA ALEXA TOTIR

IPC: H01M10/0525 ,  H01M6/40 ,  H01M10/058

Abstract: A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.

公开(公告)号：GB2565497A

公开(公告)日：2019-02-13

申请号：GB201819531

申请日：2017-05-23

Applicant: IBM

Inventor： BUCKNELL WEBB ,  PAUL ANDRY

IPC: H01M2/08 ,  H01M2/26 ,  H01M4/62 ,  H01M6/40

Abstract: Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.

公开(公告)号：GB2562941A

公开(公告)日：2018-11-28

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JOHN KNICKERBOCKER ,  JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices (202, 302). In one embodiment, a release layer (210) is applied to a handler (204). The release layer (210) comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer (210). The additive comprises, for example, a 355nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600nm to 740nm. The at least one singulated semiconductor device (202) is bonded to the handler (204). The at least one singulated semiconductor device (202) is packaged while it is bonded to the handler (204). The release layer (210) is ablated by irradiating the release layer (210) through the handler (204) with a laser (214). The the at least one singulated semiconductor device (202) is removed from the transparent handler (204) after the release layer (210) has been ablated.

公开(公告)号：GB2565497B

公开(公告)日：2021-10-06

申请号：GB201819531

申请日：2017-05-23

Applicant: IBM

Inventor： BUCKNELL WEBB ,  PAUL ANDRY

IPC: H01M50/183 ,  H01M4/62 ,  H01M6/40 ,  H01M50/531

Abstract: Batteries include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.

公开(公告)号：GB2562941B

公开(公告)日：2020-12-16

申请号：GB201812268

申请日：2016-12-02

Applicant: IBM

Inventor： JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  BING DANG ,  CORNELIA TSANG YANG ,  JOHN KNICKERBOCKER

IPC: H01L21/673

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

公开(公告)号：GB2602607A

公开(公告)日：2022-07-06

申请号：GB202205126

申请日：2020-08-19

Applicant: IBM

Inventor： PAUL ANDRY ,  ERIC PETER LEWANDOWSKI ,  DANA ALEXA TOTIR

IPC: H01M10/0525 ,  H01M10/058

Abstract: A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.

公开(公告)号：GB2556268B

公开(公告)日：2018-12-26

申请号：GB201801637

申请日：2016-08-02

Applicant: IBM

Inventor： PAUL ANDRY ,  BUCKNELL WEBB ,  CORNELIA KANG-I TSANG

IPC: H01M10/04 ,  H01M2/02 ,  H01M2/08 ,  H01M6/40

Abstract: A microbattery structure for hermetically sealed microbatteries is provided. In one embodiment, the microbattery structure includes a first silicon substrate containing at least one pedestal which houses a cathode material of a microbattery and at least one depression which houses A FIRST sealant material of the microbattery. The structure further includes a second silicon substrate containing at least one pedestal which houses an anode material of the microbattery and at least one depression which houses a second sealant material of the microbattery. An insulated centerpiece is bonded to the first sealant material present in at least two depressions on the first silicon substrate. An interlock structure is formed by aligning and superimposing the second silicon substrate on the first silicon substrate in a mortise and tenon fashion and sealing the two substrates using a high force.

公开(公告)号：GB2548726A

公开(公告)日：2017-09-27

申请号：GB201707907

申请日：2015-10-19

Applicant: IBM

Inventor： JEFFREY GELORME ,  LI-WEN HUNG ,  PAUL ANDRY ,  CORNELIA KANG-I TSANG ,  JOHN KNICKER-BOCKER ,  ROBERT DAVID ALLEN

IPC: H01L21/683

Abstract: A method for adhesive bonding in microelectronic device processing is provided that includes bonding a handling wafer to a front side of a device wafer with an adhesive comprising phenoxy resin; and thinning the device wafer from the backside of the device wafer while the device wafer is adhesively engaged to the handling wafer. After the device wafer has been thinned, the adhesive comprising phenoxy resin may be removed by laser debonding, wherein the device wafer is separated from the handling wafer.