公开(公告)号：DE2540901A1

公开(公告)日：1976-04-29

申请号：DE2540901

申请日：1975-09-13

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  HULL EDWARD MELVIN ,  POGGE HANS BERNHARD

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/22

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

公开(公告)号：DE2521568A1

公开(公告)日：1976-01-02

申请号：DE2521568

申请日：1975-05-15

Applicant: IBM

Inventor： POGGE HANS BERNHARD ,  POPONIAK MICHAEL ROBERT

IPC: H01L27/00 ,  C25F3/12 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762

公开(公告)号：CH623685A5

公开(公告)日：1981-06-15

申请号：CH1382977

申请日：1977-11-14

Applicant: IBM

Inventor： MADER SIEGFRIED REINHARD ,  MASTERS BURTON JOSEPH ,  POGGE HANS BERNHARD

IPC: H01L21/265 ,  H01L29/167

公开(公告)号：DE2549787A1

公开(公告)日：1976-07-01

申请号：DE2549787

申请日：1975-11-06

Applicant: IBM

Inventor： BROADIE ROBERT WALLACE ,  KEMLAGE BERNARD MICHAEL ,  POGGE HANS BERNHARD

IPC: H01L21/205 ,  H01L33/00 ,  C23C11/08 ,  C23C13/04 ,  C23F17/00

公开(公告)号：IT1162788B

公开(公告)日：1987-04-01

申请号：IT2680679

申请日：1979-10-26

Applicant: IBM

Inventor： POGGE HANS BERNHARD

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L

公开(公告)号：AU523702B2

公开(公告)日：1982-08-12

申请号：AU5207979

申请日：1979-10-23

Applicant: IBM

Inventor： POGGE HANS BERNHARD

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/22 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/768 ,  H01L21/822 ,  H01L27/04 ,  H01L21/263 ,  H01L21/465

公开(公告)号：DE2962031D1

公开(公告)日：1982-03-11

申请号：DE2962031

申请日：1979-04-26

Applicant: IBM

Inventor： ANANTHA NARASIPUR GUNDAPPA ,  BHATIA HARSARAN SINGH ,  GAUR SANTOSH PRASAD ,  POGGE HANS BERNHARD

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8224 ,  H01L27/082 ,  H01L29/08 ,  H01L29/735 ,  H01L27/08 ,  H01L29/72

Abstract: Lateral PNP or NPN devices in isolated monocrystalline silicon pockets wherein silicon dioxide isolation surrounds the pocket and partially, below the surface, within the isolated monocrystalline region are described. The P emitter or N emitter diffusion is made over the portion of the silicon dioxide that partially extends into the monocrystalline isolated pocket. This structure reduces the vertical current injection which will give relatively high (beta) gain even at low base to emitter voltages.

公开(公告)号：DE2861473D1

公开(公告)日：1982-02-18

申请号：DE2861473

申请日：1978-09-01

Applicant: IBM

Inventor： BONDUR JAMES ALLEN ,  POGGE HANS BERNHARD

IPC: H01L21/76 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/32 ,  H01L21/762 ,  H01L21/306

Abstract: A method for producing deeply recessed oxidized regions in silicon. A series of deep trenches are formed in a silicon wafer by a reactive ion etching (RIE) method. In a first species, the trenches are of equal width. A block-off mask is selectively employed during part of the RIE process to produce trenches of unequal depth. The trench walls are thermally oxidized to completely fill in all of the trenches with oxide at the same time. In a second species, the trenches are of equal depth and width and of uniform spacing. In one aspect of the second species, the width of the trenches is equal to the distance between the trenches whereby the thermal oxidation completely fills in the trenches with oxide at the same time that the silicon between the trenches is fully converted to silicon oxide. In another aspect of the second species, the trenches are wider than the distance between the trenches whereby the thermal oxidation only partially fills in the trenches with oxide when the intervening silicon is fully converted to silicon oxide. In the latter aspect, the filling of the trenches is completed by the deposition of suitable material such as pyrolytically deposited silicon oxide.

公开(公告)号：DE2861453D1

公开(公告)日：1982-02-11

申请号：DE2861453

申请日：1978-08-07

Applicant: IBM

Inventor： BONDUR JAMES ALLAN ,  POGGE HANS BERNHARD

IPC: H01L21/76 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762 ,  H01L21/263

Abstract: A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is particularly useful wherein the openings are made through a region of silicon having a layer of a high doping conductivity.

公开(公告)号：AU3034977A

公开(公告)日：1979-05-10

申请号：AU3034977

申请日：1977-11-04

Applicant: IBM

Inventor： MADER SIEGFRIED REINHARD ,  MASTERS BURTON JOSEPH ,  POGGE HANS BERNHARD

IPC: H01L21/265 ,  H01L29/167 ,  H01L29/36