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    Pressure sensor monolithically integrated and relative process of fabrication
    5.
    发明公开
    Pressure sensor monolithically integrated and relative process of fabrication 审中-公开
    Monolithisch integrierter Drucksensor undzugehörigesHerstellungsverfahren

    公开(公告)号：EP1215476A2

    公开(公告)日：2002-06-19

    申请号：EP01830759.5

    申请日：2001-12-12

    Applicant: STMicroelectronics S.r.l.

    Inventor： Coffa, Salvatore ,  Occhipinti, Luigi

    IPC: G01L9/06

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0109 ,  B81C2201/0115 ,  G01L9/0042

    Abstract: Monolithically integrated pressure sensors of outstanding quality and versatility are produced through micromechanical surface structures definition techniques.
    A microphonic cavity in the semiconductor substrate is monolithically formed by

    cutting by plasma etching the front side or the back side of the silicon wafer a plurality of trenches or holes deep enough to extend for at least part of its thickness into a purposely made doped buried layer of opposite type of conductivity of the substrate and of the epitaxial layer grown over it;
    electrochemically etching through such trenches, the silicon of the buried layer with an electrolytic solution suitable for selectively etching the doped silicon of said opposite type of conductivity, making the silicon of the buried layer porous; and
    oxidizing and leaching away the silicon so made porous.

    Preferably, the trenches or holes for accessing the doped buried layer are cut through the epitaxial layer and not through the rear of the monocrystalline silicon substrate thus avoiding the burden of precisely aligning the mask on the rear surface with the masks that are used on the front surface of the substrate. Moreover, the thickness of the substrate is normally much greater than that of the epitaxial layer and thus the need to cut relatively deep and narrow trenches requiring the use of special plasma etching equipment is avoided.

    Abstract translation: 通过微机械表面结构定义技术生产具有出色品质和多功能性的单片式集成压力传感器。 半导体衬底中的微音腔通过等离子体蚀刻硅晶片的前侧或背面而切割成多个沟槽或孔，其深度足以将其厚度的至少一部分延伸至有目的地 制造掺杂的掩埋层，其衬底和在其上生长的外延层具有相反类型的导电性; 通过这种沟槽电蚀刻蚀刻掩埋层的硅，其中电解溶液适于选择性地蚀刻具有相反导电性的掺杂硅，使掩埋层的硅多孔化; 并将氧化和浸出硅，使得多孔。 优选地，用于进入掺杂掩埋层的沟槽或孔切割穿过外延层，而不是穿过单晶硅衬底的后部，从而避免将后表面上的掩模精确对准的掩模与掩模 用于基板的正面。 此外，衬底的厚度通常远大于外延层的厚度，因此避免需要切割需要使用特殊等离子体蚀刻设备的较深和窄的沟槽。

    Micro silicon fuel cell, method of fabrication and self-powered semiconductor device integrating a micro fuel cell
    8.
    发明公开
    Micro silicon fuel cell, method of fabrication and self-powered semiconductor device integrating a micro fuel cell 审中-公开
    微型燃料电池的硅，用于制造和具有微型燃料电池自主半导体器件的方法

    公开(公告)号：EP1258937A1

    公开(公告)日：2002-11-20

    申请号：EP01830314.9

    申请日：2001-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： D'Arrigo, Giuseppe ,  Coffa, Salvatore ,  Spinella, Rosario Corrado

    IPC: H01M8/10 ,  H01M8/24

    CPC classification number: H01M8/241 ,  H01M8/1004 ,  H01M8/1007 ,  H01M2300/0082

    Abstract: A miniscule fuel cell is realized on a doped monocrystalline silicon subtrate.
    The microporous catalytic electrodes permeable to a gaseous fuel or an oxygen containing gas are constituted by a plurality of coplanar and parallel strips (3,4) of a catalytic metallic material electroplated or sputtered over an heterogeneous columnar skeleton structure of monocrystalline silicon (1,2) purposely formed by etching the silicon substrate to realize the plurality of parallel trenches (7,8) for ducting reagent and products of the electrode reactions to and from the microporous catalytic electrode formed thereon.
    The spaced parallel strips (3,4) constituting the microporous catalytic electrode permeable to gases are electrically connected one to the other by parallel strips (5,6) of conducting material alternate to the microporous strips of catalytic electrode material. The whole composite electrode structure of the half-cell is in electrical contact with the conducting substrate of monocrystalline silicon in correspondence of said strips of conducting material deposited over the crests of separation between adjacent parallel trenches etched in the silicon substrate, and optionally also in correspondence of the heterogeneous columnar skeleton of conducting monocrystalline silicon in case it is not completely removed by an eventual chemical and/or electrochemical final etching step after having deposited thereon the catalytic metal to form a self-sustaining microporous structure.
    Two half-cells thus formed on distinct silicon substrates are thereafter placed one against the other sandwiching, at least over the cell area, a thin film of permionic membrane substantially impermeable to fluids.

    Abstract translation: 甲微乎其微燃料电池实现上的掺杂单晶硅subtrate。 可渗透气体燃料或以含氧气体的微孔催化电极通过电镀的催化金属材料的共面和带（3,4）的多元构成或溅射在单晶硅的异质柱状骨架结构（平行1.2 ）特意通过蚀刻硅衬底来实现平行沟槽（7,8），用于管道的电极反应的试剂和产品，和从在其上形成微多孔催化电极的多个形成。 构成微多孔催化电极透过气体隔开的平行条带（3,4）被电连接一个到另一个由导电材料的替代品催化电极材料的微孔条带的平行条带（5,6）。 半电池的整个复合电极结构与单晶硅在进行淀积在硅衬底蚀刻相邻平行沟槽之间的分离的齿顶材料的所述条带的对应的导电衬底电接触，并由此任选地在对应 在情况下进行的单晶硅的异质柱状骨架的它没有完全呼叫通过在最终的化学和/或电化学蚀刻最后一步在其上的催化金属具有沉积以形成自持微孔结构之后去除。 此后两个半电池由此形成不同硅衬底上放置一个抵靠另一个夹持，至少在小区区域，permionic膜的薄膜基本上不渗透流体。

    Infrared detector integrated with a waveguide and method of manufacturing
    9.
    发明公开
    Infrared detector integrated with a waveguide and method of manufacturing 审中-公开
    具有用于其生产的集成波导和方法红外探测器

    公开(公告)号：EP0993053A1

    公开(公告)日：2000-04-12

    申请号：EP98830592.6

    申请日：1998-10-09

    Applicant: STMicroelectronics S.r.l.

    Inventor： Polman, Albert ,  Hamelin, Nicholas ,  Kik, Peter ,  Coffa, Salvatore ,  Frisina, Ferruccio ,  Saggio, Mario

    IPC: H01L31/108 ,  H01L31/0288 ,  G02B6/42

    CPC classification number: G02B6/12004 ,  H01L31/0352 ,  H01L31/103

    Abstract: The infrared detector device (1) comprises a PN junction (9, 10) formed by a first semiconductor material region (9) doped with rare earth ions and by a second semiconductor material region (10) of opposite doping type (P). The detector device comprises a waveguide (8) formed by a projecting structure (6) extending on a substrate (2) including a reflecting layer (4) and laterally delimited by a protection and containment oxide region (11). At least one portion of the waveguide (8) is formed by the PN junction and has an end fed with light to be detected. The detector device (1) has electrodes (18, 13) disposed laterally to and on the waveguide (8) to allow an efficient gathering of charge carriers generated by photoconversion.

    Abstract translation: 红外线检测器装置（1）包括由第一半导体材料区域而形成的PN结（9，10）（9）掺杂有稀土离子和由相反的掺杂类型（P）的第二半导体材料区（10）。 该检测器装置包括一个波导（8）由形成突出结构（6）延伸的基板上（2）包括反射层（4）和晚期反弹由保护和容纳氧化物区（11）分隔。 在波导的至少一个部分（8）是由PN结形成并且具有端馈送有被检测光。 所述检测器装置（1）具有电极（18，13），其设置尾盘反弹并在波导（8），以允许在由光转换产生的载流子收集效率。

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