公开(公告)号：EP1762925A1

公开(公告)日：2007-03-14

申请号：EP05425633.4

申请日：2005-09-09

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Faralli, Dino

IPC: G06F3/033 ,  G01L5/22

CPC classification number: G01L5/223 ,  G06F3/0338 ,  Y10T29/49105 ,  Y10T29/49169

Abstract: In an input device (30), a control element (32) is operated by a user; a pressure sensor (1) is mechanically coupled to the control element (32) and is provided with a monolithic body (2) of semiconductor material housing a first sensitive element (4), which detects an actuation of the control element (32); a supporting element (34) is connected to the pressure sensor (1); and connection elements (38) electrically connect the monolithic body (2) to the supporting element (34) without interposition of a package. In particular, the monolithic body (2) has electrical-contact areas (6) carried by one main surface (2a) thereof, and the printed circuit board (34) has conductive regions (37) carried by a main face (34) thereof; the connection elements (38) are conductive bumps and electrically connect the electrical-contact areas (6) to the conductive regions (37).

Abstract translation: 在输入装置（30），控制元件（32）是由用户操作; 的压力传感器（1）机械地联接到控制元件（32），并设置有一整体式主体半导体材料壳体（2）具有第一敏感元件（4），其在所述控制元件的致动（32）检测; 的支撑元件（34）被连接到所述压力传感器（1）; 和连接部件（38），其电未经封装的插入单块体（2）连接到所述支撑元件（34）。 特别地，所述整体式主体（2）具有电接触区域（6）由一个主表面（2a）中，以及它们的印刷电路板（34）中进行具有由主面（34）中进行的导电区域（37）其 ; 连接元件（38）是导电凸块和电的电接触区域（6）连接到导电区域（37）。

公开(公告)号：EP1684079A1

公开(公告)日：2006-07-26

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

Abstract translation: 半导体压阻加速度计（35）的制造工艺包括以下步骤：提供半导体材料的晶片（11）; 在所述晶片（11）上方的空腔（22）上提供膜（23）; 将惯性质量块（25）刚性耦合到膜（23）上; 以及在所述晶片（11）中提供对所述膜（23）的应变敏感的压阻转导元件（24）并产生相应的电信号。 通过在与空腔（22）相对的膜（23）的表面的顶部上形成惯性质量（25）来进行联接的步骤。 加速度计（35）有利地用于监测车辆的轮胎的压力（30）的装置中。 空腔可以形成为掩埋腔。 质量可以通过丝网印刷金属浆料形成。

公开(公告)号：EP2096448A2

公开(公告)日：2009-09-02

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A semiconductor pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.

Abstract translation: 半导体组合的加速度计和压力监控装置的制造过程（30）游离缺失盘，着的正视：提供半导体材料的晶片（31）; 提供，在晶片的第一区域（34A）（31）的第一掩埋空腔（22），并悬浮在，并且在顶部闭合的第一膜（23），所述第一掩埋空腔（22）; 提供，在第二区域（34B）的晶片（31），第二掩埋空腔（40），并悬浮在，并且在顶部闭合第二膜（41），所述第二掩埋空腔（40）; 耦合到在刚性方式惯性质量（25）到所述第一膜（23）通过在第一膜的表面的顶部上形成惯性质量（25）（23）相对于该第一掩埋空腔（22）; 提供，在所述第一膜（23），第一压阻转换元件（24）到所述第一膜（23）的敏感的菌株由于响应于感测到的加速度的惯性质量（25）的运动和产生相应的电信号，从而 以提供到加速度传感器（35）; 和提供，在第二膜（41），第二压阻转换元件（42），以响应于感测到的压力和产生所述第二膜（41）的菌株相应的电信号，以提供一个压力传感器敏感（36） 与在晶片（31）加速度传感器（35）集成在一起。 一种组合半导体加速度计和压力监控装置（30）是这样游离缺失盘，与上述制造方法制得。

公开(公告)号：EP1684079A9

公开(公告)日：2006-10-25

申请号：EP05425028.7

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a semiconductor piezoresistive accelerometer (35) includes the steps of: providing a wafer (11) of semiconductor material; providing a membrane (23) in the wafer (11) over a cavity (22); rigidly coupling an inertial mass (25) to the membrane (23); and providing, in the wafer (11), piezoresistive transduction elements (24), that are sensitive to strains of the membrane (23) and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass (25) on top of a surface of the membrane (23) opposite to the cavity (22). The accelerometer (35) is advantageously used in a device for monitoring the pressure (30) of a tyre of a vehicle. The cavity may be formed as a buried cavity. The mass may be formed by silk-screen printing of a metal paste.

公开(公告)号：EP2644563A3

公开(公告)日：2013-12-04

申请号：EP13169983.7

申请日：2008-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Cortese, Mario Francesco

IPC: B81B7/00 ,  G01L19/00 ,  G01L13/02 ,  G01D11/24

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises:
- a substrate (2) provided with at least one passing opening (5),
- a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at lesat one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11 a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises
- a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

公开(公告)号：EP1764597A1

公开(公告)日：2007-03-21

申请号：EP05425648.2

申请日：2005-09-16

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Petroni, Simona ,  Pomarico, Angela ,  Baldo, Lorenzo

IPC: G01L9/00 ,  G01L11/04

CPC classification number: G01L9/0025

Abstract: Surface acoustic wave pressure sensor (1) comprising:
- a substrate (3) and at least one flexible membrane (5), suspended over a cavity (4) defined in the thickness of the substrate, the membrane (5) being elastically deformable by a pressure (P) applied by a fluid (5) and being defined between a first surface (5a) facing the cavity (4) and a second opposite surface (5b);
- a SAW device (6, 7 8) comprising a layer of piezoelectric material (6) arranged on said second surface (5b) of the membrane, the SAW device further comprising at least one SAW electro-acoustic transducer (7, 8) formed on one free surface of said piezoelectric layer (6).
The piezoelectric layer (6) is formed by deposition of piezoelectric material on the membrane (5) and the substrate (3) is integrated in a wafer of semiconductor material (2), the membrane being a layer of said wafer (2) suspended over said cavity (4).

Abstract translation: 表面声波压力传感器（1）包括： - 衬底（3）和至少一个柔性膜（5），其悬挂在限定在所述衬底的厚度上的空腔（4）上，所述膜（5）可通过 由流体（5）施加并且限定在面向空腔（4）的第一表面（5a）和第二相对表面（5b）之间的压力（P）; - SAW器件（6,78），其包括布置在所述膜的所述第二表面（5b）上的压电材料层（6），所述SAW器件还包括形成有至少一个SAW电声换能器（7,8） 在所述压电层（6）的一个自由表面上。 压电层（6）通过在膜（5）上沉积压电材料而形成，并且衬底（3）集成在半导体材料（2）的晶片中，该膜是所述晶片（2）的一个层 所述腔（4）。

公开(公告)号：EP2644563A2

公开(公告)日：2013-10-02

申请号：EP13169983.7

申请日：2008-01-23

Applicant: STMicroelectronics S.r.l.

Inventor： Baldo, Lorenzo ,  Combi, Chantal ,  Cortese, Mario Francesco

IPC: B81B7/00 ,  G01L19/00 ,  G01L13/02 ,  G01D11/24

CPC classification number: B81B7/0061 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2203/0154 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Electronic device (1, 1a, 1b, 1c, 1d, 1e) which comprises:
- a substrate (2) provided with at least one passing opening (5),
- a MEMS device (7) with function of differential sensor provided with a first and a second surface (9, 10) and of the type comprising at lesat one portion (11) sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface (11a, 11b) thereof, the first surface (9) of the MEMS device (7) leaving the first active surface (11 a) exposed and the second surface (10) being provided with a further opening (12) which exposes said second opposed active surface (11b), the electronic device (1, 1d, 1e) being characterised in that the first surface (9) of the MEMS device (7) faces the substrate (2) and is spaced therefrom by a predetermined distance, the sensitive portion (11) being aligned to the passing opening (5) of the substrate (2), and in that it also comprises
- a protective package (14, 14a, 14b), which incorporates at least partially the MEMS device (7) and the substrate (2) so as to leave the first and second opposed active surfaces (11a, 11b) exposed respectively through the passing opening (5) of the substrate (2) and the further opening (12) of the second surface (10).

Abstract translation: 电子设备（1,1a，1b，1c，1d，1e）包括： - 设置有至少一个通过开口（5）的基板（2）， - 具有差动传感器功能的MEMS装置（7） 第一和第二表面（9,10），并且其类型包括对于与第一和第二相对的有效表面（11a，11b）相对应存在的流体的化学和/或物理变化敏感的一部分（11） 离开第一有源表面（11a）的MEMS器件（7）的第一表面（9）暴露，并且第二表面（10）设置有暴露所述第二相对的有效表面（11b）的另外的开口（12） 所述电子设备（1d，1e）的特征在于，所述MEMS器件（7）的所述第一表面（9）面向所述基板（2）并且与所述第一表面（9）隔开预定距离，所述敏感部分 对准衬底（2）的通过开口（5），并且其还包括 - 保护性封装（14,14a，14b） ），其至少部分地结合MEMS器件（7）和衬底（2），以便分别暴露于通过衬底（2）的通过开口（5）的第一和第二相对的有效表面（11a，11b） 和第二表面（10）的另一个开口（12）。

公开(公告)号：EP2096448A3

公开(公告)日：2012-04-04

申请号：EP09161586.4

申请日：2005-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Baldo, Lorenzo ,  Faralli, Dino ,  Villa, Flavio Francesco

IPC: G01P15/12 ,  G01P15/08 ,  G01P15/18

CPC classification number: G01P15/123 ,  G01P15/0802 ,  G01P15/18 ,  G01P2015/084

Abstract: A manufacturing process of a combined semiconductor accelerometer and pressure-monitoring device (30) is disclosed, envisaging: providing a wafer (31) of semiconductor material; providing, in a first region (34a) of the wafer (31) a first buried cavity (22) and a first membrane (23), suspended over, and closing at the top, the first buried cavity (22); providing, in a second region (34b) of the wafer (31), a second buried cavity (40) and a second membrane (41), suspended over, and closing at the top, the second buried cavity (40); coupling an inertial mass (25) in a rigid way to the first membrane (23), by forming the inertial mass (25) on top of a surface of the first membrane (23) opposite to the first buried cavity (22); providing, in the first membrane (23), first piezoresistive transduction elements (24) sensitive to strains of the first membrane (23) due to movements of the inertial mass (25) in response to a sensed acceleration and generating corresponding electrical signals, so as to provide an acceleration sensor (35); and providing, in the second membrane (41), second piezoresistive transduction elements (42) sensitive to strains of the second membrane (41) in response to a sensed pressure and generating corresponding electrical signals, so as to provide a pressure sensor (36) integrated with the acceleration sensor (35) in the wafer (31). A combined semiconductor accelerometer and pressure-monitoring device (30) is also disclosed, made with the above manufacturing process.

公开(公告)号：EP1870687A1

公开(公告)日：2007-12-26

申请号：EP06425430.3

申请日：2006-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ziglioli, Federico ,  Combi, Chantal ,  Baldo, Lorenzo ,  Riva, Caterina ,  Shaw, Mark Andrew

IPC: G01L19/00 ,  G01L9/00

CPC classification number: G01L19/0038

Abstract: Described herein is an assembly (30) of an integrated device (1) and of a cap (32) coupled to the integrated device; the integrated device (1) is provided with at least a first and a second region (16, 17) to be fluidically accessed from outside, and the cap (32) has an outer portion (32a) provided with at least a first and a second inlet port (35, 36) in fluid communication with the first and second regions (16, 17). In particular, the first and second regions (16, 17) are arranged on a first outer face (20a), or on respective adjacent outer faces (20a, 20c), of the integrated device (1), and an interface structure (38) is set between the integrated device (1) and the outer portion (32a) of the cap (32), and is provided with a channel arrangement (39, 40) for routing the first and second regions (16, 17) towards the first and second inlets (35, 36).

Abstract translation: 在所描述的是一个集成的装置的组件（30）（1）耦合到所述集成装置的帽（32）的和; 集成器件（1）设置有至少一个第一和一个第二区域（16，17）以流体方式从外部访问，并且所述盖（32）具有在设置有至少一个第一和一个外部分（32A） 在与所述第一和第二区域（16,17）流体连通的第二入口端口（35，36）。 特别地，所述第一和第二区域（16,17）被布置在第一外表面（20A）上或集成器件（1），以及respectivement相邻的外表面（20A，20C）（对接结构38 ）被设置在集成器件（1）和盖（32的外部分（32A）之间），设置有用于朝向所述路由所述第一和第二区域（16,17）的信道配置（39,40） 第一和第二入口（35，36）。

公开(公告)号：EP1775259A1

公开(公告)日：2007-04-18

申请号：EP05425719.1

申请日：2005-10-14

Applicant: STMicroelectronics S.r.l.

Inventor： Combi, Chantal ,  Vigna, Benedetto ,  Ziglioli, Federico Giovanni ,  Baldo, Lorenzo

IPC: B81B7/02

CPC classification number: B81C1/0023 ,  B81B7/02 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1), provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is mechanically coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1) with the outside of the substrate-level assembly (22). The device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).

Abstract translation: 在衬底级组件（22）中，半导体材料的器件衬底（20）具有顶面（20a）并且容纳设置有器件衬底（3）内的掩埋腔（3）的第一集成器件（1） （20），以及在所述顶面（20a）附近悬挂在所述掩埋腔（3）上的膜（4）。 封盖基板（21）在上表面（20a）之上机械耦合到器件基板（20），以便覆盖第一集成器件（1），使得第一空间（25）设置在上面 膜（4）。 电接触元件（28a，28b）将集成器件（1）与衬底级组件（22）的外部电连接。 装置基板（20）至少集成有设置有相应膜（4'）的另外的集成装置（1'，10）; 并且在另一个集成装置（1'，10）的相应膜（4'）上方设置有与第一空空间（25）流体隔离的另外的空的空间（25'）。