公开(公告)号：EP3247134A1

公开(公告)日：2017-11-22

申请号：EP16206878.7

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

公开(公告)号：EP4144687A1

公开(公告)日：2023-03-08

申请号：EP22190201.8

申请日：2022-08-12

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  CORSO, Lorenzo ,  VILLA, Flavio Francesco ,  NICOLI, Silvia ,  LAMAGNA, Luca

IPC: B81B7/02 ,  B81C1/00

Abstract: Method for manufacturing a micro-electro-mechanical system, MEMS, (50) integrating a first MEMS device (51) and a second MEMS device (52). The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.

公开(公告)号：EP4140942A1

公开(公告)日：2023-03-01

申请号：EP22190178.8

申请日：2022-08-12

Applicant: STMicroelectronics S.r.l.

Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  CAMPEDELLI, Roberto ,  LAMAGNA, Luca ,  DUQI, Enri ,  AZPEITIA URQUIA, Mikel ,  NICOLI, Silvia ,  TURI, Maria Carolina

IPC: B81C1/00

Abstract: Method for manufacturing a micro-electro-mechanical device (30; 30'), comprising the steps of: forming, on a substrate (2), a first protection layer (5) of crystallized aluminum oxide, impermeable to HF; forming, on the first protection layer (5), a sacrificial layer (8, 8') of silicon oxide removable with HF; forming, on the sacrificial layer (8, 8'), a second protection layer (15) of crystallized aluminum oxide; exposing a sacrificial portion (8') of the sacrificial layer (8, 8'); forming, on the sacrificial portion (8'), a first membrane layer (20) of a porous material, permeable to HF; forming a cavity (22) by removing the sacrificial portion (8') through the first membrane layer (20); and sealing pores of the first membrane layer (20) by forming a second membrane layer (24) on the first membrane layer (20).