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    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR
    2.
    发明公开
    MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR 审中-公开

    公开(公告)号：EP4284148A1

    公开(公告)日：2023-11-29

    申请号：EP23172050.9

    申请日：2023-05-08

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  DEL SARTO, Marco

    IPC: H10N10/13 ,  H10N10/17 ,  H10N19/00

    Abstract: MEMS thermoelectric generator (10) comprising: a thermoelectric cell (100) including one or more thermoelectric elements (110) partially extending on a cavity of the thermoelectric cell (100); a total thermoplastic layer (20; 20, 48) extending on the thermoelectric cell (100) and having a top surface (20a; 52a) and a bottom surface (20b) opposite to each other along a first axis (Z), the bottom surface (20b) facing the thermoelectric cell (100) and the total thermoplastic layer (20; 20, 48) being of thermally insulating material and configured to be processed through laser direct structuring, LDS, technique; a heat sink (14) configured to exchange heat with the thermoelectric cell (100) interposed, along the first axis (Z), between the heat sink (14) and the total thermoplastic layer (20; 20, 48); and a thermal via (30; 30, 50) of metal material, extending through the total thermoplastic layer (20; 20, 48) from the top surface (20a; 52a) to the bottom surface (20b) so that it is superimposed, along the first axis (Z), on the cavity (115), wherein the thermoelectric cell (100) may exchange heat with a thermal source (12) through the thermal via (30; 30, 50).

    PROCESS FOR MANUFACTURING A MEMS MICROMIRROR DEVICE, AND ASSOCIATED DEVICE
    3.
    发明公开
    PROCESS FOR MANUFACTURING A MEMS MICROMIRROR DEVICE, AND ASSOCIATED DEVICE 有权
    制造MEMS微反射镜装置的工艺及相关装置

    公开(公告)号：EP3276392A1

    公开(公告)日：2018-01-31

    申请号：EP17162626.0

    申请日：2017-03-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  CARMINATI, Roberto ,  VILLA, Flavio Francesco

    IPC: G02B26/08 ,  B81C1/00

    Abstract: A process for manufacturing a MEMS micromirror device from a monolithic body (104) of semiconductor material. Initially, a buried cavity (106) is formed in the monolithic body and delimits at the bottom a suspended membrane (105) arranged between the buried cavity (106) and a main surface (104A) of the monolithic body (104). Then, the suspended membrane (105) is defined to form a supporting frame (115) and a mobile mass (114) rotatable about an axis (C) and carried by the supporting frame (115). The mobile mass forms an oscillating mass (107), supporting arms (109), spring portions (111), and mobile electrodes (112) combfingered to fixed electrodes (113). A reflecting region (145) is formed on top of the oscillating mass (107).

    Abstract translation: 一种由半导体材料的单片体（104）制造MEMS微镜器件的方法。 最初，埋入式空腔（106）形成在整体式主体中，并且在底部限定了布置在埋入式空腔（106）与整体式主体（104）的主表面（104A）之间的悬浮膜（105）。 然后，限定悬挂膜105以形成支撑框架115和可围绕轴线C旋转并由支撑框架115承载的可移动质量块114。 可移动块形成摆动块（107），支撑臂（109），弹簧部分（111）和梳状地连接到固定电极（113）的可移动电极（112）。 反射区域（145）形成在振动块（107）的顶部上。

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    4.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A3

    公开(公告)日：2022-03-16

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    MICRO-ELECTRO-MECHANICAL TYPE PRESSURE DEVICE HAVING LOW SENSITIVITY TO TEMPERATURE
    6.
    发明公开
    MICRO-ELECTRO-MECHANICAL TYPE PRESSURE DEVICE HAVING LOW SENSITIVITY TO TEMPERATURE 审中-公开
    具有低温灵敏度的微电机械式压力装置

    公开(公告)号：EP3210934A1

    公开(公告)日：2017-08-30

    申请号：EP16194672.8

    申请日：2016-10-19

    Applicant: STMicroelectronics S.r.l.

    Inventor： DUQI, Enri ,  CONTI, Sebastiano ,  BALDO, Lorenzo ,  VILLA, Flavio Francesco

    IPC: B81B3/00

    CPC classification number: B81B7/0038 ,  B81B3/0086 ,  B81B7/0019 ,  B81B7/0061 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81C1/00269

    Abstract: A micro-electro-mechanical pressure sensor device (100), formed by a cap region (102) and by a sensor region (101) of semiconductor material. An air gap (107) extends between the sensor region (101) and the cap region (102; 103); a buried cavity (109) extends underneath the air gap, in the sensor region (101), and delimits a membrane (111) at the bottom. A through trench (110) extends within the sensor region (101) and laterally delimits a sensitive portion (121) housing the membrane, a supporting portion (120), and a spring portion (122), the spring portion connecting the sensitive portion (121) to the supporting portion (120). A channel (123) extends within the spring portion (122) and connects the buried cavity (109) to a face (101A) of the second region (101). The first air gap (107) is fluidically connected to the outside of the device, and the buried cavity (109) is isolated from the outside via a sealing region (106B) arranged between the sensor region (101) and the cap region (102).

    Abstract translation: 一种微电子机械压力传感器装置（100），其由帽区（102）和半导体材料的传感器区域（101）形成。 气隙（107）在传感器区域（101）和盖区域（102; 103）之间延伸; 埋入空腔（109）在传感器区域（101）中的气隙下方延伸，并在底部界定膜（111）。 贯穿沟槽（110）在传感器区域（101）内延伸并横向限定容纳薄膜的敏感部分（121），支撑部分（120）和弹簧部分（122），弹簧部分连接敏感部分 121）连接到支撑部分（120）。 通道（123）在弹簧部分（122）内延伸并且将掩埋腔（109）连接到第二区域（101）的面（101A）。 第一气隙107流体连接到装置的外部，并且掩埋腔109经由布置在传感器区域101和帽区域102之间的密封区域106B与外部隔离。 ）。

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    9.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：EP3913681A2

    公开(公告)日：2021-11-24

    申请号：EP21174210.1

    申请日：2021-05-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： FERRARI, Paolo ,  VILLA, Flavio Francesco ,  ZULLINO, Lucia ,  NOMELLINI, Andrea ,  SEGHIZZI, Luca ,  ZANOTTI, Luca ,  SCOLARI, Martina ,  MURARI, Bruno

    IPC: H01L27/16 ,  H01L35/22 ,  H01L35/34 ,  H01L31/052

    Abstract: A method of fabricating a thermoelectric converter comprises: providing a layer (115; 215) of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements (133a; 237; 330a) of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements (133b; 249; 330b) of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer (115; 215) thickness, from the first surface to the second surface; forming electrically conductive interconnections (143, 413; 257, 413) in correspondence of the first surface and of the second surface of the layer of Silicon-based material (115; 215),, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal (257') and an output electrical terminal (257") electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

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