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公开(公告)号：CN108622842A
公开(公告)日：2018-10-09
申请号：CN201710167444.8
申请日：2017-03-21
Applicant: 中芯国际集成电路制造(上海)有限公司 , 中芯国际集成电路制造(北京)有限公司
CPC classification number: H04R31/003 , B81B3/0051 , B81B3/007 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C1/00158 , B81C1/00476 , B81C1/00658 , B81C2201/0105 , B81C2201/0133 , H04R7/18 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2231/003 , H04R2307/025 , B81B3/0027 , B81C1/00349 , B81C1/00404 , B81C2201/0174 , H04R9/08
Abstract: 本发明公开一种半导体装置及其制造方法，涉及半导体技术领域。其中半导体装置包括衬底以及位于衬底上的振动膜和覆盖层，其中部分覆盖层位于振动膜的上方，衬底、振动膜和覆盖层形成空腔；其中衬底包括能够露出振动膜的至少部分下表面的开口、以及设在所述开口侧壁上的至少一个支撑部。由于在衬底的开口侧壁上设有支撑部，因此当振动膜发生形变时，支撑部能够为振动膜提供支撑，以免振动膜发生断裂。同时由于支撑部与振动膜的接触面积有限，因此并不会对半导体装置的信噪比造成影响。
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2.发明公开INTEGRATED STRUCTURE OF MEMS MICROPHONE AND PRESSURE SENSOR, AND MANUFACTURING METHOD THEREOF 审中-公开MEMS麦克风及压力传感器的整体结构及其制造方法
公开(公告)号：EP3249952A1
公开(公告)日：2017-11-29
申请号：EP15894016.3
申请日：2015-12-14
Applicant: Goertek Inc.
Inventor： SUN, Yanmei
IPC: H04R19/04
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81C1/00158 , B81C2201/0105 , B81C2201/013 , G01L7/08 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.
Abstract translation: 本发明公开了一种MEMS麦克风与压力传感器集成结构的制作方法，包括以下步骤：依次在绝缘层，第一多晶硅层，牺牲层和第二多晶硅层上依次沉积 共享基板; 蚀刻第二多晶硅层以形成振动膜片和上电极; 侵蚀牺牲层以形成麦克风和压力传感器的容纳腔，以及刻蚀麦克风和压力传感器之间的牺牲层; 刻蚀第一多晶硅层以形成麦克风的背电极和压力传感器的下电极; 蚀刻麦克风的背电极下面的共享基板的位置以形成后腔; 并且蚀刻掉背电极下方的绝缘层的区域。 MEMS麦克风和压力传感器的电容结构集成在共用基板上，提高了MEMS麦克风和压力传感器的集成度，大大减小了整个封装结构的体积; 另外，麦克风和压力传感器可以同时制造在共享的基板上以提高生产效率。
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公开(公告)号：WO2016192373A1
公开(公告)日：2016-12-08
申请号：PCT/CN2015/097315
申请日：2015-12-14
Applicant: 歌尔声学股份有限公司
Inventor： 孙艳美
IPC: H04R19/04
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81C1/00158 , B81C2201/0105 , B81C2201/013 , G01L7/08 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: 本发明公开了一种MEMS麦克风、压力传感器集成结构及其制造方法，在共用衬底上依次沉积绝缘层、第一多晶硅层、牺牲层和第二多晶硅层；刻蚀第二多晶硅层，形成振膜、上电极；腐蚀牺牲层，形成麦克风、压力传感器的容腔，并将麦克风、压力传感器之间的牺牲层腐蚀掉；刻蚀第一多晶硅层，形成麦克风的背极以及压力传感器的下电极；对共用衬底位于麦克风背极下方的位置进行刻蚀，形成背腔；将位于背极下方的绝缘层刻蚀掉。将麦克风的电容结构、压力传感器的电容结构集成在共用衬底上，提高了麦克风和压力传感器的集成度，可以大大降低整个封装结构的尺寸；另外，可以在共用衬底上同时制作出麦克风和压力传感器，提高了生产的效率。
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4.发明申请METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES INCLUDING CAVITIES FILLED WITH A SACRIFICAL MATERIAL 审中-公开制造半导体结构的方法，包括填充有材料的CAVIITY
公开(公告)号：WO2014206737A1
公开(公告)日：2014-12-31
申请号：PCT/EP2014/062137
申请日：2014-06-11
Applicant: SOITEC
Inventor： SADAKA, Mariam , ESCARNOT, Ludovic
IPC: B81C1/00
CPC classification number: B81C1/00047 , B81B1/002 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C2201/0105 , B81C2201/014 , B81C2201/0192
Abstract: Methods of forming semiconductor structures comprising one or more cavities (106), which may be used in the formation of microelectromechanical system (MEMS) transducers, involve forming one or more cavities in a first substrate (100), providing a sacrificial material (110) within the one or more cavities, bonding a second substrate (120) over the a surface of the first substrate, forming one or more apertures (140) through a portion of the first substrate to the sacrificial material, and removing the sacrificial material from within the one or more cavities. Structures and devices are fabricated using such methods.
Abstract translation: 形成可用于形成微机电系统（MEMS）换能器的一个或多个空腔（106）的半导体结构的方法包括在第一基板（100）中形成一个或多个空腔，提供牺牲材料（110） 在所述一个或多个空腔内，将第二基板（120）接合在所述第一基板的表面上，形成通过所述第一基板的一部分到所述牺牲材料的一个或多个孔（140），以及从所述第一基板 一个或多个腔。 使用这种方法制造结构和装置。
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5.发明公开
公开(公告)号：EP3375753A1
公开(公告)日：2018-09-19
申请号：EP18161932.1
申请日：2018-03-15
Inventor： BERTHELOT, Audrey , COLIN, Mikaël
IPC: B81B7/00
CPC classification number: B81B7/0038 , B81B7/02 , B81B2201/025 , B81B2203/0136 , B81B2203/0315 , B81C1/00285 , B81C2201/0105 , B81C2203/019
Abstract: Micro-dispositif (100) comportant :
- un substrat,
- un élément fixe (102) solidaire du substrat,
- un premier élément mobile (104) suspendu à l'élément fixe par des premiers éléments de maintien, et apte à se déplacer par rapport à l'élément fixe,
- un deuxième élément mobile (108) suspendu au premier élément mobile par des deuxièmes éléments de maintien, et apte à se déplacer par rapport au premier élément mobile et à l'élément fixe,
- une première cavité (116) dont au moins une partie des parois est formée par l'élément fixe et dans laquelle est encapsulé le premier élément mobile,
- une deuxième cavité (120) disposée au sein de la première cavité, dont au moins une partie des parois est formée par le premier élément mobile, dans laquelle est encapsulé le deuxième élément mobile et qui est isolée de la première cavité.-
Patent Agency Ranking6.发明公开
公开(公告)号：EP3249952A4
公开(公告)日：2018-02-28
申请号：EP15894016
申请日：2015-12-14
Applicant: GOERTEK INC
Inventor： SUN YANMEI
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81C1/00158 , B81C2201/0105 , B81C2201/013 , G01L7/08 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: The present invention discloses a manufacturing method of an integrated structure of a MEMS microphone and a pressure sensor, which comprises the following steps: depositing an insulating layer, a first polycrystalline silicon layer, a sacrificial layer and a second polycrystalline silicon layer in sequence on a shared substrate; etching the second polycrystalline silicon layer to form a vibrating diaphragm and an upper electrode; eroding the sacrificial layer to form a containing cavity of a microphone and a pressure sensor, and etching the sacrificial layer between the microphone and the pressure sensor; etching the first polycrystalline silicon layer to form a back electrode of the microphone and a lower electrode of the pressure sensor; etching a position of the shared substrate below a back electrode of the microphone to form a back cavity; and etching away the region of the insulating layer below the back electrode. A capacitance structure of a MEMS microphone and that of a pressure sensor are integrated on a shared substrate, improving integration of a MEMS microphone and a pressure sensor, and greatly reducing a size of a whole packaging structure; in addition, a microphone and a pressure sensor can be simultaneously manufactured on a shared substrate to improve the efficiency of production.
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公开(公告)号：US20240182291A1
公开(公告)日：2024-06-06
申请号：US18437338
申请日：2024-02-09
Applicant: HITACHI, LTD.
Inventor： Shun Kumano , Hideki Hasegawa , Masuyuki Suguyama
CPC classification number: B81B3/0072 , B81C1/00666 , H04N23/54 , H04N23/687 , B81B2203/0118 , B81B2203/019 , B81B2203/0307 , B81C2201/0105 , B81C2201/0178 , G02B7/021
Abstract: The present invention is characterized by involving a light source irradiating the inside of an ion source with light, a camera acquiring intensity as information of scattered light by droplets generated by electrospraying, and a processing device storing, in a storage unit, determination reference information indicating a relationship between a parameter of a channel system of a liquid chromatography device and the intensity, in which the processing device executes: acquiring the intensity from the camera; comparing the acquired intensity with the determination reference information; and determining a failure of a channel system in the liquid chromatography device by detecting a change in the scattered light relative to a value of the determination reference information based on the acquired intensity by comparing the acquired intensity with the determination reference information.
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公开(公告)号：US11847851B2
公开(公告)日：2023-12-19
申请号：US17675832
申请日：2022-02-18
Applicant: INVENSENSE, INC.
Inventor： Julius Ming-Lin Tsai , Mike Daneman , Sanjiv Kapoor
CPC classification number: G06V40/1306 , B06B1/067 , B06B1/0666 , B81B7/007 , B81C1/00238 , B81C1/00246 , B81C1/00301 , G01H11/08 , B06B2201/70 , B81B2201/0271 , B81B2201/032 , B81B2203/0127 , B81B2207/012 , B81B2207/015 , B81C2201/0105 , B81C2201/0109 , B81C2203/035 , B81C2203/036 , B81C2203/0792
Abstract: Microelectromechanical (MEMS) devices and associated methods are disclosed. Piezoelectric MEMS transducers (PMUTs) suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuit (IC), as well as PMUT arrays having high fill factor for fingerprint sensing, are described.
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公开(公告)号：US11796396B2
公开(公告)日：2023-10-24
申请号：US17216047
申请日：2021-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsai-Hao Hung , Shih-Chi Kuo
CPC classification number: G01K7/32 , B81B3/0008 , B81C1/00944 , B81B2201/0278 , B81B2203/0136 , B81B2203/04 , B81C2201/013 , B81C2201/0105 , B81C2201/0116
Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.
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10.发明授权公开(公告)号：US09988265B2
公开(公告)日：2018-06-05
申请号：US15243031
申请日：2016-08-22
Inventor： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
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