公开(公告)号：DE10240107A1

公开(公告)日：2004-03-11

申请号：DE10240107

申请日：2002-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/87 ,  H01L21/328 ,  H01L29/70 ,  H01L29/739 ,  H01L29/745

Abstract: Edge end comprises a semiconductor body (21) having a first conductivity type with two opposing main surfaces (30,31), a first region (22) of opposing conductivity type embedded in the first main surface, a second region (24) of a first conductivity type provided in the first region, a region (23) of different conductivity type provided in the region of the second main surface, a first electrode (6) arranged on the first main surface, and a second electrode (8) on the second main surface. A first zone (17) of different conductivity extends from the edge of the third and/or first region in the semiconductor body. Independent claims are also included for: (1) process for the production of an n-conducting zone, preferably an edge end, in a p-conducting semiconductor body; and (2) diode having a p-conducting semiconductor body.

公开(公告)号：DE10238797A1

公开(公告)日：2004-03-11

申请号：DE10238797

申请日：2002-08-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  FALCK ELMAR

IPC: H01L29/06 ,  H01L29/861 ,  H01L21/329

Abstract: Power semiconductor diode comprises a semiconductor body (3) of first conductivity type with a first zone (4) of opposing conductivity type embedded in the semiconductor body and a second zone (5) embedded in the first zone. A further zone (8) of second conductivity is embedded in the second zone, has a stronger doping than the second zone and extends below the end of the edge structure (6). An Independent claim is also included for a process for the production of a power semiconductor diode comprising applying a structure layer on a semiconductor body as mask, forming a p-sink by ion implantation using the mask, removing the mask layer, diffusing the p-sink doping at 1000-1260degrees C for 10-700 minutes in an inert or slightly oxidizing atmosphere, applying a structured layer on the semiconductor body to mask the edge region of the p-sink, increasing the doping of the edge region of a p-emitter, forming an anode contact using ion implantation, curing the contact implantation, and implanting a rear side emitter.

公开(公告)号：DE10019813C2

公开(公告)日：2002-10-31

申请号：DE10019813

申请日：2000-04-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861

公开(公告)号：DE10104264A1

公开(公告)日：2002-08-22

申请号：DE10104264

申请日：2001-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PFAFFENLEHNER MANFRED ,  PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861

Abstract: The field plate edge structure of the power diode has at least one field plate (4,6) separated from the semiconductor body (1) via an insulating layer (5) and enclosing a pn junction formed in the semiconductor body via a dished anode zone (2) of opposite conductivity type. The field plate is coupled via an additional zone (7) of the same conductivity type as the dished anode zone with the latter and an anode metallisation (3) contacting the dished anode zone.

公开(公告)号：DE10053445A1

公开(公告)日：2002-05-23

申请号：DE10053445

申请日：2000-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  HUESKEN HOLGER ,  LASKA THOMAS ,  PORST ALFRED ,  SCHAEFFER CARSTEN ,  SCHMIDT THOMAS ,  PFIRSCH FRANK

IPC: H01L29/10 ,  H01L29/739

Abstract: IGBT comprises a semiconductor substrate forming a weakly doped drift zone (3) of first conductivity type; a zone (2) of second conductivity embedded in the first surface of the drift zone; a cell region made from highly doped emitter connection (9) and a gate electrode (8); a first metallization contacting the zone (2) and the emitter connection. A region (4, 5) of first conductivity type and a second metallization (7) are arranged opposite the region of first conductivity type on a surface of a collector region (6). The region of first conductivity type consists of two independently doped regions originating from the second metallization consisting of a highly doped flat region (5) and a low doped diffused or epitaxially produced region (4) Preferred Features: The flat region and the collector region are doped in such a way that the low doped region is flooded with charge carriers. The gate electrode is made from polycrystalline silicon.

公开(公告)号：DE10047152A1

公开(公告)日：2002-04-25

申请号：DE10047152

申请日：2000-09-22

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PFIRSCH FRANK ,  SCHMIDT GERHARD ,  BARTHELMES REINER

IPC: H01L21/322 ,  H01L21/329 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/868

公开(公告)号：DE10031461A1

公开(公告)日：2002-01-17

申请号：DE10031461

申请日：2000-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  PORST ALFRED

IPC: H01L29/32 ,  H01L29/861

Abstract: The invention relates to a high-voltage diode, wherein the dopant concentration of an anode region (4, 2) and a cathode region (1, 5, 6) is optimized in terms of the basic functions static blocking and conductivity . The dopant concentrations range from 1 x 1017 to 3 x 1018 dopant atoms per cm-3 for the anode emitter (4), especially on its surface 1019 dopant atoms per cm-3 or more for the cathode emitter (6) and approximately 1016 dopant atoms per cm-3 for the blocking function of an anode-side zone (2).

公开(公告)号：DE10019813A1

公开(公告)日：2001-12-13

申请号：DE10019813

申请日：2000-04-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/861

Abstract: The surface zone (2) conductivity is opposite to that of the semiconductor body (1). On the surface is located insulating film (4) with a contact hole (3) to the zone, which extends over the edge of the contact hole up to a field plate (6) embedded in the insulating film to form an edge terminal.Under the semiconductor zone, in the region below the contact hole, is incorporated a semiconductor region (7) more heavily doped of the first conductivity than the semiconductor body.

公开(公告)号：DE10017922A1

公开(公告)日：2001-10-25

申请号：DE10017922

申请日：2000-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUPP ROLAND ,  GRIEBL ERICH ,  WILLMEROTH ARMIN

IPC: H01L29/861

Abstract: The PN-diode has a semiconductor body (11) with a low doping concentration provided with a dished semiconductor zone (12) of opposite conductivity type, in which a second dished semiconductor zone (19) of the first conductivity type is embedded. The anode of the PN-diode is provided with a transistor having a channel region of the second conductivity type, which is controlled by a current above the blocking current level of the diode, with an emitter short-circuit between the second semiconductor zone and a further semiconductor zone (21) of the second conductivity type incorporated in the latter.

公开(公告)号：DE19942677C2

公开(公告)日：2001-08-16

申请号：DE19942677

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78