公开(公告)号：DE10339455B3

公开(公告)日：2005-05-04

申请号：DE10339455

申请日：2003-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  PFIRSCH FRANK ,  HENNINGER RALF ,  ZUNDEL MARKUS ,  TIHANYI JENOE

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body ( 100 ) having a first side ( 101 ) and a second side ( 102 ), a drift zone ( 30 ) of a first conduction type which is arranged in the region between the first and the second sides ( 101, 102 ) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone ( 30 ) and having at least one electrically conducted field electrode ( 40; 40 A- 40 E; 90 A- 90 J) arranged in a manner insulated from the semiconductor body ( 100 ), an electrical potential of the at least one field electrode ( 40; 40 A- 40 E; 90 A- 90 J) varying in the vertical direction of the semiconductor body ( 100 ) at least when a reverse voltage is applied.

公开(公告)号：DE10001865B4

公开(公告)日：2004-09-23

申请号：DE10001865

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  PAIRITSCH HERBERT

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/78 ,  H01L21/66 ,  H01L23/62

公开(公告)号：DE10245550A1

公开(公告)日：2004-04-15

申请号：DE10245550

申请日：2002-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/78

Abstract: A compensation component, in which a lateral section and, at least at one end of the lateral section, a section that is inclined with respect to the surface of a drift path, includes n-conducting and p-conducting regions completely embedded in a semiconductor body without a trench. In such a case, the inclined section is formed by ion implantation through an implantation mask with an inclined edge.

公开(公告)号：DE10239862A1

公开(公告)日：2004-03-18

申请号：DE10239862

申请日：2002-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  HIRLER FRANZ ,  LANTIER ROBERTA

IPC: H01L29/08 ,  H01L29/10 ,  H01L29/78 ,  H01L21/336

Abstract: A production process for an arrangement of trench transistor cells comprises a doped process layer on a substrate beneath an overlayer with an oppositely doped body region and an underlying drift zone. The body region is implanted to more than 25% of the body depth and the body-drain channel in the drift zone has a not lower doping density than the body region. Independent claims are also included for the following: (a) a trench transistor cell formed as above;and (b) a transistor arrangement as above

公开(公告)号：DE10224201A1

公开(公告)日：2004-01-15

申请号：DE10224201

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  PFIRSCH FRANK

IPC: H01L21/336 ,  H01L29/78

Abstract: Semiconductor component comprises: a semiconductor body (100) having a first and second connecting zones; a channel zone (20) arranged between the connecting zones; a trench (60) extending into the semiconductor body; a control electrode (40) in the trench and insulated from semiconductor body; and a current path having a pn-junction running between connecting zones and partially into the trench. Semiconductor component comprises: a semiconductor body (100) having a first connecting zone (12, 14) and a second connecting zone (30) of a first conductivity type; a channel zone (20) of a conductivity type complementary to the first type arranged between the connecting zones; a trench (60) extending into the semiconductor body and reaching from the second connecting zone into the first connecting zone; a control electrode (40) arranged in the trench next to the channel zone and insulated from the semiconductor body; and a current path having a pn-junction running between the connecting zones and partially into the trench. An independent claim is also included for a process for the production of the semiconductor component.

公开(公告)号：DE10201489A1

公开(公告)日：2003-07-24

申请号：DE10201489

申请日：2002-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  PFIRSCH FRANK

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: Production of first electrodes (40A, 40B) and second electrodes (70A, 70B) in a trench (20A, 20B) of a semiconductor body (10) comprises preparing a semiconductor body with a trench, forming an insulating layer (30A, 30B) in the lower region of the trench, depositing a first electrode layer on the front side of the semiconductor body and in the trench, removing the first electrode layer from the upper region of the trench and from regions of the front side to leave a connecting zone of electrode material, anodically oxidizing the remaining sections of the first electrode layer, and forming second electrodes in the upper region of the trench above the first electrode. Preferred Features: Before forming the second electrodes, a further insulating layer is applied on exposed surfaces of the semiconductor body in the upper region of the trench. The first insulating layer is formed in regions of the trench in which the first and second electrodes are formed during the subsequent process step.

公开(公告)号：DE10126309A1

公开(公告)日：2002-12-05

申请号：DE10126309

申请日：2001-05-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/41 ,  H01L29/739 ,  H01L29/749 ,  H01L29/78

Abstract: A region (10) for a mode of conductivity is inserted into a body zone (4) so that the body zone has a source-side part (4a) and a drain-side part (4b). This region is short-circuited to the drain-side part of the body zone. A source metallic area (6) makes an electrical connection to a source zone (5). An Independent claim is also included for a method for producing a semiconductor component.

公开(公告)号：DE10053445C2

公开(公告)日：2002-11-28

申请号：DE10053445

申请日：2000-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  HUESKEN HOLGER ,  LASKA THOMAS ,  PORST ALFRED ,  SCHAEFFER CARSTEN ,  SCHMIDT THOMAS ,  PFIRSCH FRANK

IPC: H01L29/10 ,  H01L29/739

公开(公告)号：DE10123818A1

公开(公告)日：2002-09-19

申请号：DE10123818

申请日：2001-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L27/02 ,  H01L27/06 ,  H01L27/12 ,  H01L29/739 ,  H01L23/62 ,  H01L29/78

Abstract: The arrangement has a pure semiconducting body (13,15,16,22) in which the semiconducting component (11) is integrated and a device that implements the protection function and that is controlled by a floating region of the semiconducting component. The device contains a MOS transistor whose gate electrode is electrically connected to the floating region or consists of the floating region.

公开(公告)号：DE19848828C2

公开(公告)日：2001-09-13

申请号：DE19848828

申请日：1998-10-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/872 ,  H01L29/739

Abstract: The semiconductor component has a small forward voltage and a high blocking ability. At least one drift path suitable for taking up voltage is formed in a semiconductor body between two electrodes that are arranged at a distance from one another. At least one semi-insulating layer is provided parallel to the drift path. The semi-insulating layer leads to a linear rise in the potential between the two electrodes when a reverse voltage is applied.