公开(公告)号：EP3173375B1

公开(公告)日：2018-11-14

申请号：EP16200506.0

申请日：2016-11-24

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： PORNIN, Jean-Louis ,  BAILLIN, Xavier

IPC: B81C1/00

CPC classification number: B81C1/00333 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/056 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0154

公开(公告)号：EP3321655A1

公开(公告)日：2018-05-16

申请号：EP17201370.8

申请日：2017-11-13

Applicant: Rosemount Aerospace Inc.

Inventor： POTASEK, David P. ,  HOULIHAN, Sean

IPC: G01L9/00

CPC classification number: B81B3/0086 ,  B81B3/0081 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2201/014 ,  G01L9/0047 ,  G01L9/0073

Abstract: A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.

Abstract translation: 用于电容式压力传感器的配置使用绝缘体上硅晶片来跨压力感测晶片的间隙形成电隔离感测节点。 整个电容式压力传感器的电气隔离，间隙的小面积和硅材料允许最小的寄生电容并避免与热失配相关的问题。

公开(公告)号：EP3253708A1

公开(公告)日：2017-12-13

申请号：EP16746948.5

申请日：2016-01-15

Applicant: MKS Instruments, Inc.

Inventor： GU, Lei ,  BART, Stephen F.

IPC: B81B7/02 ,  B81B7/04 ,  B81C1/00 ,  B81C3/00 ,  G01L19/00 ,  G01K13/00 ,  G01P15/00

CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

公开(公告)号：EP3055249B1

公开(公告)日：2017-11-29

申请号：EP14787234.5

申请日：2014-10-02

Applicant: Centre National de la Recherche Scientifique ,  Universite de Nantes

Inventor： LETHIEN, Christophe ,  TILMANT, Pascal ,  EUSTACHE, Etienne ,  ROLLAND, Nathalie ,  BROUSSE, Thierry

IPC: B81C1/00 ,  H01M6/40 ,  H01M10/04 ,  H01M10/02

CPC classification number: H01M10/02 ,  B81B1/002 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81C1/00047 ,  B81C1/00111 ,  B81C2201/0112 ,  B81C2201/013 ,  B81C2201/0159 ,  H01G11/70 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2220/30

公开(公告)号：EP3173375A1

公开(公告)日：2017-05-31

申请号：EP16200506.0

申请日：2016-11-24

Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： PORNIN, Jean-Louis ,  BAILLIN, Xavier

IPC: B81C1/00

CPC classification number: B81C1/00333 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/056 ,  B81C2203/0136 ,  B81C2203/0145 ,  B81C2203/0154

Abstract: Procédé d'encapsulation d'un dispositif microélectronique (100), comportant les étapes suivantes :
- réalisation d'une portion sacrificielle recouvrant le dispositif ;
- réalisation d'un capot (106) recouvrant la portion sacrificielle, comportant deux couches (108, 110) superposées de matériaux distincts et ayant des contraintes résiduelles et/ou des coefficients de dilatation thermique différents ;
- gravure, à travers le capot, d'une tranchée (112) dont le motif comporte une courbe et/ou deux segments droits non parallèles ;
- gravure de la portion sacrificielle à travers la tranchée ;
- dépôt d'un matériau de bouchage sur la tranchée ;
dans lequel, lors de la gravure de la portion sacrificielle, une portion (116) du capot définie par la tranchée se déforme sous l'effet d'une contrainte mécanique engendrée par les contraintes résiduelles et/ou une dilatation thermique des couches du capot et augmente les dimensions de la tranchée, cette contrainte étant supprimée avant le bouchage de la tranchée.

公开(公告)号：EP2988883A4

公开(公告)日：2017-02-22

申请号：EP14756616

申请日：2014-02-27

Applicant: TEXAS INSTRUMENTS INC

Inventor： JOHNSON PETER B ,  WYGANT IRA OAKTREE

IPC: B06B1/02

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

公开(公告)号：EP2972557A4

公开(公告)日：2016-11-02

申请号：EP14762298

申请日：2014-03-13

Applicant: ERLICH RAVIV ,  GERSON YUVAL

Inventor： ERLICH RAVIV ,  GERSON YUVAL

IPC: G02B26/08 ,  B81B3/00 ,  B81C1/00 ,  G02B26/10

CPC classification number: F16C11/12 ,  B81B3/0043 ,  B81B2201/0235 ,  B81B2201/034 ,  B81B2201/042 ,  B81B2203/0118 ,  B81B2203/0163 ,  B81C1/0015 ,  B81C1/00198 ,  B81C1/00523 ,  B81C2201/013 ,  E05D1/02 ,  E05D7/00 ,  E05D11/0081 ,  F16F1/48 ,  F16F2224/025 ,  F16F2226/00 ,  F16F2226/042 ,  G01C19/02 ,  G01P15/09 ,  G01P15/093 ,  G01P15/125 ,  G02B26/0833 ,  G02B26/105 ,  Y10T16/522 ,  Y10T16/525 ,  Y10T29/24 ,  Y10T29/25

Abstract: A mechanical device includes a long, narrow element made of a rigid, elastic material. A rigid frame is configured to anchor at least one end of the element, which is attached to the frame, and to define a gap running longitudinally along the element between the beam and the frame, so that the element is free to move within the gap. A solid filler material, different from the rigid, elastic material, fills at least a part of the gap between the element and the frame so as to permit a first mode of movement of the element within the gap while inhibiting a different, second mode of movement.

公开(公告)号：EP2898519A4

公开(公告)日：2016-06-01

申请号：EP13839408

申请日：2013-09-20

Applicant: WISPRY INC

Inventor： MORRIS ARTHUR S ,  DEREUS DANA ,  BAYTAN NORITO

IPC: H01G5/16

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/0016 ,  B81B3/0051 ,  B81B2201/0221 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/013 ,  H01G5/18 ,  H01G7/00

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

公开(公告)号：EP2275384B1

公开(公告)日：2012-02-22

申请号：EP09165533.2

申请日：2009-07-15

Applicant: NXP B.V.

Inventor： Merz, Matthias ,  Ponomarev, Youri Victorovitch ,  Van Dal, Mark

IPC: B81C1/00 ,  G01P15/06

CPC classification number: H01L23/564 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C1/00246 ,  B81C99/005 ,  B81C2201/013 ,  B81C2203/0136 ,  B81C2203/0714 ,  G01P15/06 ,  G01P15/0802 ,  G01P2015/0862 ,  G01P2015/0877 ,  H01L21/768 ,  H01L23/5226 ,  H01L23/5256 ,  H01L23/528

Abstract: Disclosed is a semiconductor device comprising a stack of patterned metal layers (12) separated by dielectric layers (14), said stack comprising a first conductive support structure (20) and a second conductive support structure (21) and a cavity (42) in which an inertial mass element (22) comprising at least one metal portion is conductively coupled to the first support structure and the second support structure by respective conductive connection portions (24), at least one of said conductive connection portions being designed to break upon the inertial mass element being exposed to an acceleration force exceeding a threshold defined by the dimensions of the conductive connection portions. A method of manufacturing such a semiconductor device is also disclosed.

公开(公告)号：EP3071932B1

公开(公告)日：2018-10-10

申请号：EP14790041.9

申请日：2014-10-21

Applicant: Safran Electronics & Defense

Inventor： JEANROY, Alain ,  ONFROY, Philippe

IPC: G01C19/574 ,  B81B3/00 ,  B81C1/00 ,  G01C19/5733 ,  G01C19/5769

CPC classification number: G01C19/574 ,  B81B3/0021 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81C1/00547 ,  B81C2201/013 ,  G01C19/5733 ,  G01C19/5769