Method of operating an ion beam system

    公开(公告)号:EP2437279B1

    公开(公告)日:2018-05-30

    申请号:EP11007981.1

    申请日:2011-09-30

    Abstract: An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

    Ion beam system and method of operating an ion beam system
    94.
    发明公开
    Ion beam system and method of operating an ion beam system 有权
    离子束的系统和方法用于操作离子束系统

    公开(公告)号:EP2437279A3

    公开(公告)日:2012-12-05

    申请号:EP11007981.1

    申请日:2011-09-30

    Abstract: An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation.
    The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

    Ion beam system and method of operating an ion beam system
    96.
    发明公开
    Ion beam system and method of operating an ion beam system 有权
    Ionenstrahlsystem und Verfahren zum Betrieb eines Ionenstrahlsystems

    公开(公告)号:EP2437279A2

    公开(公告)日:2012-04-04

    申请号:EP11007981.1

    申请日:2011-09-30

    Abstract: An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation.
    The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

    Abstract translation: 离子束系统包括电压供应系统(7)和至少一个具有至少一个第一偏转电极(51a,51b,51c)和多个第二偏转电极(52a,52b,52c)的光束偏转器(39),其中 电压供给系统被配置为向多个第二偏转电极提供不同的可调偏转电压,使得多个第二偏转电极和相对的至少一个第一偏转电极之间的电偏转场具有共同的取向。 该系统具有高动能模式,其中电偏转场的分布具有较大的宽度,其中电偏转场的分布具有较小宽度的低动能模式。

    캐소드의 동작 온도 조정 방법 및 전자빔 묘화 장치
    98.
    发明公开
    캐소드의 동작 온도 조정 방법 및 전자빔 묘화 장치 有权
    用于调节阴极和电子束写入装置的操作温度的方法

    公开(公告)号:KR1020140106429A

    公开(公告)日:2014-09-03

    申请号:KR1020140021360

    申请日:2014-02-24

    Abstract: A method to adjust the operating temperature of cathodes given in an aspect of the present invention includes: acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode, and an operating temperature of the cathode at which a bias voltage becomes saturated on the emission current; measuring the current density of an electron beam from the cathode in a state where an n^th (n is an integer) emission current value and an n^th cathode operating temperature are set in the electron beam source; determining whether the measured current density is within a tolerance range; changing the n^th emission current value to an (n+1)^th emission current value if the measured current density is not within the tolerance range; calculating the operating temperature of the cathode corresponding to the (n+1)^th emission current value using the approximate equation; and setting the calculated operating temperature as an (n+1)^th cathode operating temperature in the electron beam source.

    Abstract translation: 调整本发明一方面给出的阴极的工作温度的方法包括:获取接近于使用阴极的电子束源中的发射电流值之间的相关性的近似方程,以及阴极的工作温度 偏置电压在发射电流上饱和; 在电子束源中设定第n(n是整数)发射电流值和第n个阴极工作温度的状态下测量来自阴极的电子束的电流密度; 确定所测量的电流密度是否在公差范围内; 如果测得的电流密度不在公差范围内,则将第n个发射电流值改变为第(n + 1)个发射电流值; 使用近似等式计算对应于第(n + 1)个发射电流值的阴极的工作温度; 并将计算出的工作温度设定为电子束源中的第(n + 1)第n个阴极工作温度。

    하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법
    99.
    发明公开
    하전 입자 빔 조사 장치, 하전 입자 빔 묘화 장치 및 물품 제조 방법 无效
    充电颗粒光束辐射装置,充电颗粒光束绘图装置及其制造方法

    公开(公告)号:KR1020130031788A

    公开(公告)日:2013-03-29

    申请号:KR1020120101434

    申请日:2012-09-13

    Abstract: PURPOSE: A charged particle beam irradiation apparatus, a charged particle beam drawing apparatus, and a method for manufacturing an article are provided to reduce the change of temperature. CONSTITUTION: An aperture array(3) includes openings. A lens array(4) has electrostatic lenses. A blanker array(5) deflects electronic beam. A blanking controller(13) controls the blanker array. Electronic beam is projected on a substrate(10) or a measurement device(12) through electromagnetic lenses(7,9). A measurement device controller(14) adjusts the measurement device. [Reference numerals] (13) Blanking controller; (14) Measurement device controller; (15) Main controller; (16) Deflector controller

    Abstract translation: 目的:提供带电粒子束照射装置,带电粒子束描绘装置和制品制造方法以减少温度变化。 构成:孔径阵列(3)包括开口。 透镜阵列(4)具有静电透镜。 消隐器阵列(5)偏转电子束。 消隐控制器(13)控制消隐器阵列。 电子束通过电磁透镜(7,9)投影在基板(10)或测量装置(12)上。 测量装置控制器(14)调节测量装置。 (附图标记)(13)消隐控制器; (14)测量装置控制器; (15)主控制器; (16)导流板控制器

    하전 입자빔 장치, 하전 입자빔 장치의 제어 방법 및 단면 가공 관찰 장치
    100.
    发明公开
    하전 입자빔 장치, 하전 입자빔 장치의 제어 방법 및 단면 가공 관찰 장치 审中-实审
    充电颗粒光束装置,用于控制充电颗粒光束装置的方法和用于处理部分的观察装置

    公开(公告)号:KR1020150088202A

    公开(公告)日:2015-07-31

    申请号:KR1020150010647

    申请日:2015-01-22

    Abstract: 적은비트수의 DAC(디지털/아날로그변환기)를이용하여가공정밀도를높일수 있는단면가공관찰장치를제공한다. 본발명의단면가공관찰장치(100)는, 하전입자빔발생집속부및 편향기를제어하는것이며, 입력한디지털신호를편향기에대해입력하는아날로그신호로변환하는 DAC를가지는이온빔제어부(11)와, 슬라이스량의설정치에의거하여편향기의주사에의한하전입자빔의시야의값을설정하는 FOV(시야) 설정부(14-1)를구비하고있다.

    Abstract translation: 提供了一种截面处理的观察装置,其可以通过使用具有少量位的数模转换器(DAC)来提高处理精度。 本发明的分割处理(100)的观察装置控制用于产生带电粒子束的束聚焦单元和偏转器,并且包括:离子束控制单元(11),其具有将输入的数字信号转换为模拟信号的DAC 被输入到偏转器中; 以及FOV设定单元(14-1),其基于切片量的设定值,对偏光器的扫描设定带电粒子束的视场(FOV)的值。

Patent Agency Ranking