Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
An ion beam system comprises a voltage supply system (7) and at least one beam deflector (39) having at least one first deflection electrode (51a,51b,51c) and plural second deflection electrodes (52a,52b,52c), wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.
Abstract:
The invention relates to an apparatus (1200,1300) for transmission of energy of an ion to at least one gas particle and/or for transportation of an ion. The invention also relates to a particle beam device having an apparatus such as this. In particular, a container is provided, in which a gas is arranged which has gas particles, wherein the container has a transport axis. Furthermore, at least one first multipole unit and at least one second multipole unit are provided, which are arranged along the transport axis. The first multipole unit and the second multipole unit are formed by printed circuit boards. Furthermore, an electronic circuit is provided, which provides each multipole unit with a potential, such that a potential gradient is generated, in particular along the transport axis.
Abstract:
A method to adjust the operating temperature of cathodes given in an aspect of the present invention includes: acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode, and an operating temperature of the cathode at which a bias voltage becomes saturated on the emission current; measuring the current density of an electron beam from the cathode in a state where an n^th (n is an integer) emission current value and an n^th cathode operating temperature are set in the electron beam source; determining whether the measured current density is within a tolerance range; changing the n^th emission current value to an (n+1)^th emission current value if the measured current density is not within the tolerance range; calculating the operating temperature of the cathode corresponding to the (n+1)^th emission current value using the approximate equation; and setting the calculated operating temperature as an (n+1)^th cathode operating temperature in the electron beam source.
Abstract:
PURPOSE: A charged particle beam irradiation apparatus, a charged particle beam drawing apparatus, and a method for manufacturing an article are provided to reduce the change of temperature. CONSTITUTION: An aperture array(3) includes openings. A lens array(4) has electrostatic lenses. A blanker array(5) deflects electronic beam. A blanking controller(13) controls the blanker array. Electronic beam is projected on a substrate(10) or a measurement device(12) through electromagnetic lenses(7,9). A measurement device controller(14) adjusts the measurement device. [Reference numerals] (13) Blanking controller; (14) Measurement device controller; (15) Main controller; (16) Deflector controller