公开(公告)号：WO2016200668A1

公开(公告)日：2016-12-15

申请号：PCT/US2016/035418

申请日：2016-06-02

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC

Inventor： ANGLIN, Kevin ,  LEE, William Davis ,  KURUNCZI, Peter ,  DOWNEY, Ryan ,  SCHEUER, Jay T. ,  LIKHANSKII, Alexandre ,  HOLBER, William M.

IPC: H01J37/32 ,  C23C16/44 ,  H01J37/34

CPC classification number: H01J37/3171 ,  B08B7/0035 ,  H01J37/241 ,  H01J37/32862 ,  H01J37/3467 ,  H01J2237/022 ,  H01J2237/04756 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/334 ,  H01J2237/335

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

Abstract translation: 本文提供了用于离子注入系统的一个或多个组分的原位等离子体清洗的方法。 在一种方法中，组件可以包括具有一个或多个导电束光学器件的束线分量。 该系统还包括用于在处理模式期间向组件提供第一电压和第一电流的电源，以及在清洁模式期间向组件提供第二电压和第二电流的电源。 第二电压和电流可以并联地施加到部件的导电束光学器件，以选择性地（例如，单独地）在一个或多个导电束光学器件中的一个或多个上产生等离子体。 该系统还可以包括用于调节供应给部件的蚀刻剂气体的喷射速率的流量控制器和用于调节部件的环境压力的真空泵。

公开(公告)号：WO2014055417A1

公开(公告)日：2014-04-10

申请号：PCT/US2013/062642

申请日：2013-09-30

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： LEVAY, William, T. ,  GAMMEL, George, M. ,  KOO, Bon-Woong ,  BINNS, Brant, S. ,  WHITE, Richard, M.

IPC: H01J37/24 ,  H01J37/248 ,  H01J37/317 ,  H01J37/32

CPC classification number: C23C14/48 ,  C23C14/021 ,  C23C14/022 ,  C23C14/048 ,  C23C14/5826 ,  H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535 ,  H01L2224/81913

Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.

Abstract translation: 描述了降低离子注入机内毛刺率的方法。 在一个实施例中，执行等离子体辅助调理，其中对提取电极的偏压被修改以便抑制离子束的形成。 提供给离子源中的等离子体发生器的功率增加，从而产生不被提取电极提取的高密度等离子体。 该等离子体从离子源室延伸穿过提取孔。 能量离子然后调节萃取电极。 在另一个实施例中，执行等离子体辅助清洁。 在该模式中，提取电极进一步从离子源室移动，并且使用不同的源气体来产生等离子体。 在一些实施例中，使用这些模式的组合来减少离子注入机中的毛刺。

公开(公告)号：WO2014036000A1

公开(公告)日：2014-03-06

申请号：PCT/US2013/056851

申请日：2013-08-27

Applicant: ADVANCED ENERGY INDUSTRIES, INC.

Inventor： BROUK, Victor ,  HOFFMAN, Daniel, J. ,  CARTER, Daniel ,  KOVALEVSKII, Dmitri

IPC: H01L21/66

CPC classification number: H01J37/32091 ,  H01J37/241 ,  H01J37/32146

Abstract: This disclosure describes systems, methods, and apparatus for operating a plasma processing chamber. In particular, a periodic voltage function combined with an ion current compensation can be provided as a bias to a substrate support as a modified periodic voltage function. This in turn effects a DC bias on the surface of the substrate that controls an ion energy of ions incident on a surface of the substrate. A peak-to-peak voltage of the periodic voltage function can control the ion energy, while the ion current compensation can control a width of an ion energy distribution function of the ions. Measuring the modified periodic voltage function can provide a means to calculate an ion current in the plasma and a sheath capacitance of the plasma sheath. The ion energy distribution function can be tailored and multiple ion energy peaks can be generated, both via control of the modified periodic voltage function.

Abstract translation: 本公开描述了用于操作等离子体处理室的系统，方法和装置。 特别地，可以将与离子电流补偿组合的周期性电压功能作为偏置提供给衬底支架作为修改的周期性电压功能。 这进一步影响基板表面上的DC偏压，该DC偏压控制入射在基板的表面上的离子的离子能。 周期电压功能的峰 - 峰电压可以控制离子能量，而离子电流补偿可以控制离子的离子能量分布函数的宽度。 测量修改的周期性电压功能可以提供计算等离子体中的离子电流和等离子体护套的护套电容的方法。 离子能量分布函数可以通过修改的周期性电压函数的控制来定制并产生多个离子能量峰值。

公开(公告)号：WO2014018340A1

公开(公告)日：2014-01-30

申请号：PCT/US2013/050891

申请日：2013-07-17

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： LUBICKI, Piotr ,  LEAVITT, Christopher ,  MILLER, Timothy ,  KOO, Bon-Woong

IPC: H01J37/02 ,  H01J37/24 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J2237/24564

Abstract: An ion implantation system and method are disclosed in which glitches in voltage are minimized by use of a modulated power supply system (230) in the implanter. The modulated power supply system includes a traditional power supply (300) and a control unit (310) associated with each power supply, where the control unit is used to isolate the power supply from an electrode by opening a source switch (321) if a glitch or arc is detected, and to quickly dissipate any charge on the electrode to ground by closing a discharge switch (331). The control unit then restores connectivity between power supply and electrode after the glitch condition has been rectified.

Abstract translation: 公开了一种离子注入系统和方法，其中通过使用注入机中的调制供电系统（230）将电压中的毛刺最小化。 调制电源系统包括与每个电源相关联的传统电源（300）和控制单元（310），其中，如果控制单元用于通过打开源开关（321）来将电源与电极隔离，如果 检测到毛刺或电弧，并通过关闭放电开关（331）将电极上的任何电荷快速耗散到地面上。 控制单元在毛刺状态纠正完毕后恢复电源和电极之间的连接。

公开(公告)号：WO2013187155A1

公开(公告)日：2013-12-19

申请号：PCT/JP2013/062896

申请日：2013-05-08

Applicant: 株式会社日立ハイテクノロジーズ

Inventor： 大西　崇 ,  渡辺　俊一 ,  金田　実

IPC: H01J37/248 ,  H01J37/067 ,  H01J37/16

CPC classification number: H01J37/04 ,  H01J27/024 ,  H01J29/485 ,  H01J37/026 ,  H01J37/067 ,  H01J37/073 ,  H01J37/16 ,  H01J37/241 ,  H01J37/248 ,  H01J2237/16

Abstract: 　本発明の荷電粒子ビーム発生装置は、荷電粒子源と、荷電粒子源からの荷電粒子の照射方向に沿って配置された複数の第１の電極と、第１の電極間に配置された複数の絶縁部材と、複数の第１の電極の周囲に設けられたハウジングとを備える。ハウジングが、絶縁性の固体材料で形成され、ハウジングが、複数の第１の電極に対して近接した位置に配置された複数の第２の電極を備える。複数の第２の電極の少なくとも１つが、複数の第１の電極の少なくとも１つに電気的に接続されて、複数の第２の電極の各々が、近接する第１の電極の電位と同じ電位になる。

Abstract translation: 该带电粒子束产生装置具有：带电粒子源; 多个第一电极，其沿带电粒子从带电粒子源辐射的方向设置; 设置在所述第一电极中的多个绝缘构件; 以及设置成围绕第一电极的壳体。 壳体由绝缘固态材料形成，并且壳体设置有多个第二电极，其设置在靠近第一电极的位置。 第二电极中的至少一个电连接到第一电极中的至少一个，并且每个第二电极的电位变得等于靠近第一电极的电位。

公开(公告)号：WO2012094375A1

公开(公告)日：2012-07-12

申请号：PCT/US2012/020151

申请日：2012-01-04

Applicant: GOJI LTD. ,  ATZMONY, Daniella ,  BEN-SHMUEL, Eran ,  ROGERS, Steven, R. ,  RON, Amichai ,  SELINGER, Daniel ,  TORRES, Eyal

Inventor： ATZMONY, Daniella ,  BEN-SHMUEL, Eran ,  ROGERS, Steven, R. ,  RON, Amichai ,  SELINGER, Daniel ,  TORRES, Eyal

IPC: H02J17/00

CPC classification number: H01J37/241 ,  H02J17/00 ,  H02J50/12 ,  H02J50/20 ,  H02J50/30 ,  H02J50/80 ,  H02J50/90 ,  H05B6/6441 ,  H05B6/68 ,  H05B6/687 ,  H05B6/701 ,  H05B6/705 ,  Y02B40/143 ,  Y02B40/146

Abstract: Apparatuses, methods, kits, and systems relating to applying electromagnetic energy to an object located at least partially in an energy application zone are disclosed. Some apparatuses may include a processor configured to determine a preliminary amount of energy to be dissipated in the object and determine a corrected amount of energy based on the preliminary amount of energy and calibration information. The processor may be further configured to cause a source to transfer energy to the energy application zone and determine an amount of dissipated energy, based on an amount of energy returned from the energy application zone and an amount of energy supplied to the energy application zone. The processor may also be configured to cause the source to transfer energy to the energy application zone at least until the amount of dissipated energy equals the corrected amount of energy.

Abstract translation: 公开了将至少部分地位于能量施加区域中的物体施加电磁能量的装置，方法，试剂盒和系统。 一些设备可以包括处理器，其被配置为基于初始的能量量和校准信息来确定待散射的物体的初始耗散量并确定校正的能量量。 处理器可以被进一步配置成基于从能量施加区域返回的能量的量和供应到能量施加区域的能量的量，使源将能量传递到能量施加区域并确定耗散能量的量。 处理器还可以被配置为使得源至少能够将能量传递到能量施加区域，直到消耗能量的量等于校正的能量量。

公开(公告)号：WO2012003327A1

公开(公告)日：2012-01-05

申请号：PCT/US2011/042610

申请日：2011-06-30

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  LUBICKI, Piotr ,  KOO, Bon, Woong

Inventor： LUBICKI, Piotr ,  KOO, Bon, Woong

IPC: H01J37/317 ,  H01J37/24 ,  H01J37/248

CPC classification number: H01J37/241 ,  H01J37/243 ,  H01J37/248 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32935 ,  H01J2237/0206 ,  H01J2237/24535

Abstract: An ion implantation system (200) and method are disclosed in which glitches in voltage are minimised by modifications to the power system of the implanter. These power supply modifications include faster response time, output filtering, improved glitch detect ion and removal of voltage blanking. By minimizing glitches, it is possible to produce solar cells with acceptable dose uniformity without having to pause the scan each time a voltage glitch is detected. For example, by shortening the duration of a voltage to about 20-4:0 milliseconds, dose uniformity within about 3% can be maintained.

Abstract translation: 公开了一种离子注入系统（200）和方法，其中通过对注入机的动力系统的修改来最小化电压中的毛刺。 这些电源修改包括更快的响应时间，输出滤波，改进的毛刺检测离子和消除电压消隐。 通过最小化毛刺，可以在每次检测到电压毛刺时不必暂停扫描，生产具有可接受的剂量均匀性的太阳能电池。 例如，通过将电压的持续时间缩短到约20-4:0毫秒，可以保持在约3％内的剂量均匀性。

公开(公告)号：WO2004027814A3

公开(公告)日：2004-05-13

申请号：PCT/DE0303041

申请日：2003-09-12

Applicant: ARDENNE ANLAGENTECH GMBH ,  DEUS CARSTEN ,  HAUFE DIETRICH ,  NEUMANN MATTHIAS ,  NOBIS REINHARD

Inventor： DEUS CARSTEN ,  HAUFE DIETRICH ,  NEUMANN MATTHIAS ,  NOBIS REINHARD

IPC: H01J37/24

CPC classification number: H01J37/241

Abstract: The invention relates to a method for regulating the electron beam output of electron sources in the rated power range of 0 to 1200 kW. The aim of the invention is to produce automatically continuous power regulation within the entire power range resulting in good focusing properties of the electron beams and minimalising internal electron beam losses. This is achieved by regulating at least two independent actuators which respectively modify one of the following parameters such as cathode temperature, cathode voltage, focusing electrode voltage or cathode-anode-distance, acting as an adjusting parameter.

Abstract translation: 本发明涉及一种用于在从0至1200kW的额定功率范围内控制电子源的电子束功率的方法。 本发明的目的是在整个功率范围内提供自动连续功率控制，这允许电子束的良好的可聚焦性和内部电子束损失的最小化。 根据本发明，通过控制至少两个独立的致动器来实现该目的，其中每个致动器将阴极温度，阴极电压，聚焦电极电压或阴极 - 阳极距离中的一个参数改变为调节参数。

公开(公告)号：WO1993018538A1

公开(公告)日：1993-09-16

申请号：PCT/US1993001830

申请日：1993-02-26

Applicant: HANKS, Charles, W.

IPC: H01J37/305

CPC classification number: H01J37/241 ,  H01J37/248 ,  H01J2237/0203 ,  H01J2237/0206 ,  H01J2237/31

Abstract: A grounded metallic shield (31) which comprises an electrode enclosing the filament leads (21, 22) and emitters (26, 27) of an e-Gun in a high vacuum chamber (11) of the type used in melting and casting metals and other materials and evaporation sources. The shield is spaced from the filament leads and emitters a distance in the order of the electron mean free path for the pressure uses within the high vacuum chamber. The structure and method of use thereof suppresses or eliminates arc-downs or glow discharges.

公开(公告)号：US20240128892A1

公开(公告)日：2024-04-18

申请号：US18198624

申请日：2023-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuk Kim

IPC: H02M7/539 ,  H01J37/24 ,  H02M1/088 ,  H02M7/48

CPC classification number: H02M7/539 ,  H01J37/241 ,  H02M1/088 ,  H02M7/4815

Abstract: A power generator with partial sinusoidal waveform includes a resonance module circuit and a pulse module circuit. The resonance module circuit includes a plurality of resonance control switches, and generates a first output voltage by selectively turning on and off the plurality of resonance control switches based on a plurality of resonance control signals. The pulse module circuit includes a plurality of pulse control switches, and generates a second output voltage by selectively turning on and off the plurality of pulse control switches based on a plurality of pulse control signals. The power generator generates a bias power based on the plurality of resonance control signals, the plurality of pulse control signals, the first output voltage and the second output voltage. The bias power has a non-sinusoidal voltage waveform during an entire time interval and a sinusoidal voltage waveform during a partial time interval.