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公开(公告)号:KR101413259B1
公开(公告)日:2014-07-02
申请号:KR1020120092568
申请日:2012-08-23
Applicant: 삼성전자주식회사
Abstract: 본 발명은 로봇청소기의 블레이드 조립체에 관한 것으로, 개구부를 가지는 본체와, 본체의 개구부에 회전 가능하게 마련되는 브러시유닛과, 브러시유닛에 의한 먼지 유입을 가이드 하는 블레이드 어셈블리를 포함하고, 블레이드 어셈블리는 바닥 쪽으로 연장되어 바닥에 접촉하는 접촉부를 갖는 블레이드와, 주행 방향으로 접촉부의 후방에 마련되고 접촉부와 다른 재질로 형성되는 유지부를 포함하여 구성되는 것이다.
Abstract translation: 本发明包括可旋转地设置在具有对于机器人清洁器的刀片组件的开口的主体的开口部分包括主体和引导由刷子单元导入的含灰尘的刷子单元的刀片组件,所述刀片组件被研磨 并且保持部分设置在接触部分在行进方向上的后部并且由与接触部分不同的材料形成。
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公开(公告)号:KR101406223B1
公开(公告)日:2014-06-30
申请号:KR1020070107817
申请日:2007-10-25
Applicant: 삼성전자주식회사
IPC: H01L27/00
CPC classification number: H01L25/0657 , H01L24/02 , H01L24/16 , H01L25/50 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/13023 , H01L2224/13024 , H01L2224/16112 , H01L2224/16147 , H01L2224/16237 , H01L2224/2518 , H01L2224/81141 , H01L2224/81191 , H01L2224/81365 , H01L2224/81385 , H01L2224/81805 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/01006 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/014
Abstract: 손상을 억제하고 높은 신뢰성을 확보할 수 있는 상호 연결부를 갖는 칩 온 칩 반도체 소자의 제조방법에 관해 개시한다. 이를 위해 본 발명은, 금속배선에 복수개의 불연속지점이 형성된 제1 반도체소자를 준비하고, 표면에 불연속지점에 대응하는 복수개의 범프가 형성된 제2 반도체 소자를 준비한 후, 제2 반도체 소자 위에 제1 반도체 소자를 정렬하여 제2 반도체 소자의 범프와 제1 반도체 소자에 있는 금속배선의 불연속지점을 연결하는 것을 특징으로 칩 온 칩(COC) 반도체소자의 제조방법을 제공한다. 따라서 반도체 소자의 고속화를 달성하고, 방열 특성을 개선하고, 다핀 접속이 가능하며 내장된 반도체 칩이 증가된 시스템 인 패키지(SIP: System In Package)를 구현할 수 있다.
칩 온 칩, 범프, 적층, 재배선.-
公开(公告)号:KR1020130130524A
公开(公告)日:2013-12-02
申请号:KR1020120054413
申请日:2012-05-22
Applicant: 삼성전자주식회사
CPC classification number: H01L23/49827 , H01L23/481 , H01L23/49822 , H01L23/49838 , H01L2924/0002 , H05K2201/09563 , H01L2924/00
Abstract: Proposed is a semiconductor device. The semiconductor device includes a substrate, an insulating layer formed on the surface of the substrate, a through via structure exposed to the surface of the insulating layer and vertically penetrating the substrate and the insulating layer, and a via pad formed on the surface of the exposed through via structure. The via pad includes a via pad body directly formed on the surface of the exposed through via structure, a via pad inlay surrounding the through via structure, and protruding from the insulating layer and formed in the lower part of a via pad body directly formed on the surface of the exposed through via structure. The via pad body and the via pad inlay includes a via pad barrier layer directly formed on the insulating layer and a via pad metal layer formed on the via pad barrier layer.
Abstract translation: 提出是一种半导体器件。 半导体器件包括衬底,形成在衬底的表面上的绝缘层,暴露于绝缘层的表面并垂直穿透衬底和绝缘层的通孔结构,以及形成在衬底的表面上的通孔焊盘 通过通孔结构曝光。 通孔焊盘包括直接形成在暴露的通孔结构的表面上的通孔焊盘体,围绕通孔结构的通孔焊盘嵌体,并且从绝缘层突出并形成在直接形成在通孔焊盘体上的通孔焊盘主体的下部 暴露于通孔结构的表面。 通孔焊盘主体和通孔焊盘嵌体包括直接形成在绝缘层上的通孔焊盘阻挡层和形成在通孔焊盘阻挡层上的通孔焊盘金属层。
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公开(公告)号:KR1020130063579A
公开(公告)日:2013-06-17
申请号:KR1020110129986
申请日:2011-12-07
Applicant: 삼성전자주식회사
CPC classification number: H01L2224/0401 , H01L2224/05568 , H01L2224/0557 , H01L2224/06181 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/92125 , H01L2924/00014 , H01L2924/15311 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
Abstract: PURPOSE: A semiconductor device stacked package and a method for forming the same are provided to remove a copper contaminant generated in a process for etching the upper surface of a substrate to expose a through via. CONSTITUTION: A substrate(10) includes a lower surface(10a) where a passivation layer(11) is formed and an upper surface(10b) facing the lower surface. A through via(12) passes through the upper and the lower surface of the substrate. A first pad(14) electrically connected to the through via is formed on the passivation layer. A second pad(18) is formed on the through via exposed to the upper surface of the substrate. The second pads are electrically connected to the through vias, the first pads, and a first solder ball(16).
Abstract translation: 目的:提供半导体器件堆叠封装及其形成方法,以去除在蚀刻衬底的上表面以暴露通孔的工艺中产生的铜污染物。 构成:衬底(10)包括形成有钝化层(11)的下表面(10a)和面向下表面的上表面(10b)。 通孔(12)穿过基板的上表面和下表面。 电连接到通孔的第一焊盘(14)形成在钝化层上。 在暴露于基板的上表面的通孔上形成第二焊盘(18)。 第二焊盘电连接到通孔,第一焊盘和第一焊球(16)。
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公开(公告)号:KR1020130054005A
公开(公告)日:2013-05-24
申请号:KR1020110119772
申请日:2011-11-16
Applicant: 삼성전자주식회사
IPC: H01L23/48 , H01L23/045 , H01L23/055
CPC classification number: H01L2224/06181 , H01L2224/16146 , H01L2224/18 , H01L2924/00012
Abstract: PURPOSE: A semiconductor device including a TSV is provided to increase mechanical strength by performing a front etching process. CONSTITUTION: A line layer(130) is formed on the upper surface of a substrate(110). A penetration silicon via passes through the substrate. The via is electrically connected to the line layer. The lower end of the via is protruded from the lower surface of the substrate. The lateral surface of the lower end part is covered with silicon.
Abstract translation: 目的:提供包括TSV的半导体器件,以通过执行前蚀刻工艺来增加机械强度。 构成:在衬底(110)的上表面上形成线层(130)。 穿透硅通孔穿过基底。 通孔电连接到线路层。 通孔的下端从基板的下表面突出。 下端部的侧面被硅覆盖。
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公开(公告)号:KR1020120129287A
公开(公告)日:2012-11-28
申请号:KR1020110047450
申请日:2011-05-19
Applicant: 삼성전자주식회사
IPC: H01L23/055 , H01L23/045 , H01L23/06
CPC classification number: H01L21/76898 , H01L21/7682 , H01L23/481 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/06181 , H01L2224/13 , H01L2224/13023 , H01L2224/13024 , H01L2224/13025
Abstract: PURPOSE: A semiconductor device having a penetrating electrode of air gap dielectric structure and a manufacturing method thereof are provided to prevent a contact between an electrode and a substrate by extending a bottom insulating layer for coating the lower surface of a substrate. CONSTITUTION: A substrate comprises an active surface and a non-active layer facing the active surface. A penetrating electrode(108) passes through the substrate. A trench(111) is formed between the substrate and the penetrating electrode. A bottom insulating layer(114) covers a non-active layer of the substrate. The bottom insulating layer forms an air gap between the substrate and the penetrating electrode.
Abstract translation: 目的:提供一种具有气隙电介质结构的穿透电极的半导体器件及其制造方法,以通过延伸用于涂覆衬底的下表面的底部绝缘层来防止电极和衬底之间的接触。 构成:衬底包括面向活性表面的活性表面和非活性层。 穿透电极(108)穿过衬底。 在衬底和穿透电极之间形成沟槽(111)。 底部绝缘层(114)覆盖衬底的非有源层。 底部绝缘层在基板和穿透电极之间形成气隙。
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公开(公告)号:KR1020120042642A
公开(公告)日:2012-05-03
申请号:KR1020110086080
申请日:2011-08-26
Applicant: 삼성전자주식회사
CPC classification number: A47L9/0411 , A47L9/0466 , A47L9/0626 , A47L9/0633 , A47L11/4044 , A47L11/4052 , A47L2201/00 , A47L9/28 , A47L9/02 , A47L9/04 , A47L11/20
Abstract: PURPOSE: A robot cleaner is provided to prevent noise caused by abnormal contact of a blade and the floor while driving and to maintain driving and cleaning performance by preventing blade twist. CONSTITUTION: A robot cleaner comprises a body, a brush unit, and a blade assembly(82). The brush unit is rotatably formed in an opening part of the body. The blade assembly guides the inflow of dust caused by the brush unit. The blade assembly comprises a blade(83) and a supporting member(85). The blade comprises a first part fixed in the body and a second part extended from the first part toward the floor. In order to restrict flow of the second part of the blade to a predetermined arrangement, at least a part of the supporting member is adjacently arranged to the second part of the blade.
Abstract translation: 目的:提供机器人清洁器,以防止在驾驶时刀片和地板异常接触造成的噪音,并通过防止刀片扭转来保持驾驶和清洁性能。 构成:机器人清洁器包括主体,刷子单元和叶片组件(82)。 刷子单元可旋转地形成在主体的开口部分中。 刀片组件引导由刷子单元引起的灰尘的流入。 叶片组件包括叶片(83)和支撑构件(85)。 刀片包括固定在主体中的第一部分和从第一部分向地板延伸的第二部分。 为了将叶片的第二部分的流动限制到预定布置,支撑构件的至少一部分相邻地布置到叶片的第二部分。
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公开(公告)号:KR1020090074382A
公开(公告)日:2009-07-07
申请号:KR1020080000143
申请日:2008-01-02
Applicant: 삼성전자주식회사
IPC: H05K3/40
CPC classification number: H05K1/185 , H01L23/49816 , H01L23/5389 , H01L24/19 , H01L24/82 , H01L2224/04105 , H01L2224/12105 , H01L2224/32145 , H01L2224/73267 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H05K3/3457 , H05K3/4694 , H05K2201/10719
Abstract: A semiconductor module and a manufacturing method thereof are provided to prevent a crack of an external connection terminal by surrounding an external surface of a semiconductor package with a PCB(Printed Circuit Board). A semiconductor module(100) includes a PCB(110), a semiconductor package(120), an electrode pattern(132,134), an insulating layer pattern(142,144) and an outer connector(150). The PCB has an internal space. The semiconductor package is received in an internal space of the PCB to be electrically connected to the PCB. The electrode pattern is formed on the surface of the PCB in order to be electrically connected to the PCB. The insulating layer pattern is formed on the surface of the PCB. An opening is formed in the insulating layer pattern in order to partly expose the electrode pattern. The opening is connected to the internal space of the PCB. The external connection terminal electrically connects the PCB and the semiconductor package. The external connection terminal includes a solder ball.
Abstract translation: 提供半导体模块及其制造方法,以通过用PCB(印刷电路板)包围半导体封装的外表面来防止外部连接端子的裂纹。 半导体模块(100)包括PCB(110),半导体封装(120),电极图案(132,134),绝缘层图案(142,144)和外部连接器(150)。 PCB有一个内部空间。 半导体封装被接收在PCB的内部空间中以与PCB电连接。 电极图案形成在PCB的表面上,以便电连接到PCB。 绝缘层图案形成在PCB的表面上。 在绝缘层图案中形成开口以部分地暴露电极图案。 开口连接到PCB的内部空间。 外部连接端子电连接PCB和半导体封装。 外部连接端子包括焊球。
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公开(公告)号:KR100881199B1
公开(公告)日:2009-02-05
申请号:KR1020070066168
申请日:2007-07-02
Applicant: 삼성전자주식회사
IPC: H01L23/12
CPC classification number: H01L24/05 , H01L23/481 , H01L24/03 , H01L24/06 , H01L24/13 , H01L24/32 , H01L25/0657 , H01L2224/02372 , H01L2224/034 , H01L2224/036 , H01L2224/0401 , H01L2224/05009 , H01L2224/05011 , H01L2224/05552 , H01L2224/05559 , H01L2224/05561 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/06136 , H01L2224/06181 , H01L2224/08146 , H01L2224/32145 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/0002 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/19041 , H01L2924/00014
Abstract: 관통전극을 구비하는 반도체 장치 및 이를 제조하는 방법을 제공한다. 상기 제조방법에 있어 반도체 기판 상에 제1 절연막을 형성한다. 상기 제1 절연막 상에 상기 제1 절연막을 노출시키는 제1 개구부를 구비하는 배선을 형성한다. 상기 배선의 상부 및 상기 제1 개구부 내에 제2 절연막을 형성한다. 상기 제2 절연막 상에 상기 제2 절연막을 노출시키는 제2 개구부를 구비하는 도전성 패드를 형성한다. 상기 제2 개구부 및 상기 제1 개구부 내에 상기 제2 개구부의 폭 및 상기 제1 개구부의 폭에 비해 작은 폭을 갖고, 상기 제2 절연막, 상기 제1 절연막 및 상기 반도체 기판의 상부를 관통하는 관통홀을 형성한다. 상기 관통홀 내에 관통전극을 형성한다.
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公开(公告)号:KR1020080085380A
公开(公告)日:2008-09-24
申请号:KR1020070026806
申请日:2007-03-19
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: H01L23/525 , H01L24/05 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48847 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/05042 , H01L2224/48824 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor package having a rewire layer and a method for manufacturing the same are provided to increase an interface adhesive strength between a bonding pad and an interlayer dielectric by curing a metal ink and the interlayer dielectric at the same time. A chip pad(13) is formed on a semiconductor substrate(10). A rewire layer(25) is connected to the chip pad. A dielectric has an opening unit exposing a part of the rewire layer. A metal ink is applied into the opening unit to form a bonding pad(35). The metal ink applied into the opening unit and the dielectric are cured at the same time. The metal ink is applied by performing a jetting method, a dropping method, a spraying method, or a printing method. The metal ink contains gold(Ag), silver(Ag), copper(Cu), or nickel(Ni). The metal ink is applied to the dielectric adjacent to the opening unit. The dielectric is a polyimide(PI) layer, polybenzooxazole(PBO) layer, or benzocyclobutene(BCB) layer.
Abstract translation: 提供具有再丝线层的半导体封装及其制造方法,以通过同时固化金属墨水和层间电介质来增加焊盘与层间电介质之间的界面粘合强度。 在半导体衬底(10)上形成芯片焊盘(13)。 连线层(25)连接到芯片焊盘。 电介质具有暴露电线层的一部分的开口单元。 金属油墨被施加到开口单元中以形成接合焊盘(35)。 施加到打开单元中的金属油墨和电介质同时固化。 通过喷射法,滴下法,喷涂法或印刷法进行金属油墨的涂布。 金属油墨含有金(Ag),银(Ag),铜(Cu)或镍(Ni)。 金属油墨被施加到与打开单元相邻的电介质。 电介质是聚酰亚胺(PI)层,聚苯并恶唑(PBO)层或苯并环丁烯(BCB)层。
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