公开(公告)号：KR1020070030507A

公开(公告)日：2007-03-16

申请号：KR1020050085225

申请日：2005-09-13

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  노영수 ,  이정욱

IPC: H01L21/20

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  H01L31/1836 ,  H01L31/1864

Abstract: 본 발명은 p형 산화아연(ZnO) 박막 제조방법 및 이를 이용한 산화아연계 광전소자 제조방법에 관한 것으로서, Ⅴ족 원소가 도프된 p형 ZnO 박막을 형성하는 단계와, 상기 p형 ZnO 박막의 산소결핍에 의한 n형 성질이 보상되도록, 산소분위기에서 상기 p형 ZnO 박막을 열처리하는 단계를 포함하는 p형 ZnO 박막 제조방법을 제공한다. 또한, 본 발명은 상기한 p형 ZnO 박막 제조방법을 채용한 광전소자 제조방법도 제공한다.
산화아연(ZnO), 열처리(annealing), 비소(As), 광전소자(opto-electronic device), 발광 다이오드(light emitting diode: LED), 레이저 다이오드(laser diode)

Abstract translation: 本发明涉及一种p型ZnO薄膜的制造方法以及使用其的ZnO基光电装置的制造方法，所述方法包括：形成掺杂有V族元素的p型ZnO薄膜; 在氧气氛中形成ZnO薄膜，以补偿由于p型ZnO薄膜缺陷而引起的n型特性。 本发明还提供了采用上述用于制造p型ZnO薄膜的方法的光电器件的制造方法。

公开(公告)号：KR100543859B1

公开(公告)日：2006-01-23

申请号：KR1020030076164

申请日：2003-10-30

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  최지원 ,  윤석진 ,  김현재 ,  노영수

IPC: H01L21/306

Abstract: 본 발명은 고품질의 박막을 증착하기 위하여 황산 (H
2 SO
4 ) 용액을 이용하여 사파이어 기판을 전처리하는 방법에 관한 것이다. 본 발명에 따를 경우 표면이 평탄하고 표면의 평균 조도 (surface RMS roughness)가 0.20 nm 이하로 매우 매끄러우며 피트 (pit)가 없는 우수한 표면을 갖는 기판을 얻을 수 있다. 또한, 이러한 기판을 이용하여 박막을 증착시 기판에 의한 영향을 최소화할 수 있다.
사파이어 기판, 황산, 피트, 평균 조도

公开(公告)号：KR1020040083175A

公开(公告)日：2004-10-01

申请号：KR1020030017740

申请日：2003-03-21

Applicant: 아텍엔지니어링 주식회사 ,  한국과학기술연구원

Inventor： 조정 ,  이호성 ,  최원국 ,  유리에르마코프

IPC: H05H1/54

CPC classification number: H01J27/00

Abstract: PURPOSE: A plasma accelerator with a closed electron drift is provided to enhance the relative efficiency by using low-priced gases such as Argon and Neon as well as high-priced gases such as Xenon and Krypton. CONSTITUTION: A discharge channel(10) is used for ionizing and accelerating inflow gases. An anode is arranged coaxially to the discharge channel. A cathode is arranged at the outside of the discharge channel and is electrically connected to the anode. The cathode is electrically connected to the anode. A magnetic field generation circuit(50) is used for generating magnetic field to the discharge channel. A gas supply unit(70) supplies the inflow gases to the discharge channel. A cooling unit(80) cools one of the gas supply unit and the discharge channel.

Abstract translation: 目的：提供具有闭合电子漂移的等离子体加速器，以通过使用低价气体如氩气和氖气以及高价格气体如氙气和氪气来提高相对效率。 构成：排放通道（10）用于电离和加速流入气体。 阳极与排出通道同轴布置。 阴极布置在放电通道的外部并与阳极电连接。 阴极电连接到阳极。 磁场产生电路（50）用于向放电通道产生磁场。 气体供给单元（70）将流入气体供给到排出通道。 冷却单元（80）冷却气体供给单元和排出通道中的一个。

公开(公告)号：KR1020030033879A

公开(公告)日：2003-05-01

申请号：KR1020010066053

申请日：2001-10-25

Applicant: 한국과학기술연구원 ,  주식회사 다산 씨.앤드.아이

Inventor： 최원국 ,  정형진 ,  송재훈 ,  오희범 ,  윤덕주

IPC: C23C14/46

CPC classification number: H01J37/317 ,  H01J2237/0812 ,  H01J2237/316

Abstract: PURPOSE: A system and a method for treating surface of ITO thin film using gas cluster ion beam are provided to flatten the surface of the sample by changing operating gas into the cluster state and ionizing and accelerating gas of the cluster state, thereby irradiating the ionized and accelerated gas onto the surface of an ITO thin film sample. CONSTITUTION: The system comprises an operating gas supply unit(10) for supplying operating gas(1); a diffusion chamber(20) connected to a convergent and divergent nozzle(21) for changing operating gas supplied from the operating gas supply unit into the cluster state; a source chamber(30) comprising a skimmer(22) connected to the diffusion chamber to extract a portion of the operating gas in the cluster state, and an ionization unit(31) for ionizing the operating gas in the cluster state that is sorted by the skimmer; an acceleration chamber(40) comprising a lens(41) for increasing density of the cluster ions, and an accelerator(42) for accelerating the cluster ions; and a process chamber(50) for flattening the surface of the sample by irradiating the accelerated cluster ions onto an ITO thin film sample, wherein the system further comprises a scanner(51) installed between the acceleration chamber and process chamber to control position where the operating gas in the accelerated cluster state is ejected, and wherein the process chamber further comprises a Faraday(53) for measuring current density of the ejected operating gas.

Abstract translation: 目的：提供一种使用气体簇离子束处理ITO薄膜表面的系统和方法，通过将工作气体改变为聚集状态来使样品的表面平坦化，并使簇状态的气体离子化和加速，从而照射离子化的 并将气体加速到ITO薄膜样品的表面上。 构成：该系统包括用于供应工作气体（1）的操作气体供应单元（10）; 连接到会聚和扩散喷嘴（21）的扩散室（20），用于将从操作气体供应单元供应的工作气体改变为集束状态; 源室（30），包括连接到扩散室的分离器（22），以提取处于集束状态的工作气体的一部分;以及电离单元（31），用于使分散在所述聚集状态的工作气体离子化， 撇渣器 加速室（40），其包括用于增加所述簇离子的密度的透镜（41）和用于加速所述簇离子的加速器（42）; 以及处理室（50），用于通过将加速的簇离子照射到ITO薄膜样品上来使样品的表面平坦化，其中该系统还包括安装在加速室和处理室之间的扫描仪（51），以控制位置 喷射处于加速聚集状态的工作气体，并且其中处理室还包括用于测量喷出的操作气体的电流密度的法拉第（53）。

公开(公告)号：KR100324619B1

公开(公告)日：2002-10-12

申请号：KR1019960011995

申请日：1996-04-19

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  정형진 ,  최원국 ,  강병하

IPC: H01L21/265

Abstract: PURPOSE: A method for reforming a surface of metal and a surface reformed metal fabricated thereby are provided to decrease a wetting angle of the surface of metal by irradiating ion particles having energy to a surface of polymer or metal while reaction gas is directly applied to the surface of the polymer or the metal in a vacuum atmosphere. CONSTITUTION: Any reaction gas selected from oxygen, nitrogen, hydrogen, ammonia, carbon oxide or mixed gas thereof is directly applied to the surface of the metal in a vacuum atmosphere. Ion particles having an energy range from 0.5 kiloelectron volts to 2.5 kiloelectron volts and dosage of 10¬14-5x10¬17 ions/square centimeter are irradiated from an ion gun to the surface of the metal.

公开(公告)号：KR1020020062420A

公开(公告)日：2002-07-26

申请号：KR1020010003412

申请日：2001-01-20

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  송종한 ,  송재훈 ,  권순남 ,  황정남

IPC: H01J37/30

CPC classification number: H01J37/317 ,  H01J37/34 ,  H01J2237/31701

Abstract: PURPOSE: A gas cluster ion accelerator is provided to generate gas cluster by using adiabatic expansion and readily adjust acceleration energy of gas cluster. CONSTITUTION: A gas cluster ion accelerator comprises a cluster generating unit, an ionizing unit(32), a lens unit(52), a cluster measuring unit(36), an accelerating unit(54) and scanning units(56,58). The cluster generating unit jets gas from high pressure to low pressure under adiabatic expansion condition to convert the gas to cluster state. The ionizing unit(32) ionizes the cluster from the cluster generating unit. The lens part(52) adjusts focus of the ionized cluster from the ionizing unit(32). The cluster measuring unit(36) measures size of the ionized cluster from the lens part(52). The accelerating unit accelerates the ionized cluster. The scanning units(56,58) scan the accelerated ionized cluster from the accelerating unit(54) onto a target(75).

Abstract translation: 目的：提供气体聚集离子加速器，通过绝热膨胀产生气体簇，容易调节气体团簇的加速能。 构成：气体簇离子加速器包括簇生成单元，离子化单元（32），透镜单元（52），簇测量单元（36），加速单元（54）和扫描单元（56,58）。 集群发电机组在绝热膨胀条件下将气体从高压到低压喷射，将气体转化为集束状态。 离子化单元（32）使簇从簇生成单元离子化。 透镜部分（52）从电离单元（32）调节离子簇的聚焦。 簇测量单元（36）测量来自透镜部分（52）的电离簇的尺寸。 加速单元加速电离簇。 扫描单元（56,58）将加速的离子簇从加速单元（54）扫描到目标（75）上。

公开(公告)号：KR100336622B1

公开(公告)日：2002-05-16

申请号：KR1019997011139

申请日：1998-11-21

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  정형진 ,  최원국 ,  김기환 ,  하삼철 ,  김철환 ,  최성창

IPC: C23C4/00

CPC classification number: C23C16/30 ,  B05D1/62 ,  B05D5/083 ,  B05D2201/00 ,  B05D2203/30 ,  C23C16/503

Abstract: 본발명은, 챔버내에서표면처리하고자하는금속또는절연재료 (세라믹또는고분자)를, 금속의경우에는양극으로절연재료의경우에는금속양극위에설치하는방법으로양극을위치시키고한쪽편에음극을위치시킨후, 상기챔버내의압력을소정진공상태로유지하고, 소정압력의불포화지방족탄화수소단량체가스또는불소계단량체가스를소정압력의중합불능 (non-polymerizable) 가스와혼합하여챔버내로도입하고, 상기전극에전압을인가하여 DC 방전에의해, 상기불포화지방족탄화수소가스또는불소를포함하는단량체가스와중합불능가스로부터기인하는양(+) 및음(-) 이온및 라디칼로이루어지는플라즈마를얻고, 플라즈마증착에의해상기금속양극표면에혹은금속양극위에설치된절연재료표면에친수성또는소수성을갖는고분자중합막을형성하는 DC 방전플라즈마를이용한금속또는절연재료표면에의고분자중합막합성방법을제공하고, RF 방전플라즈마를이용한금속, 세라믹또는고분자를포함하는재료표면에의고분자중합막합성방법을제공한다.

公开(公告)号：KR1020010076662A

公开(公告)日：2001-08-16

申请号：KR1020000003940

申请日：2000-01-27

Applicant: 한국과학기술연구원

Inventor： 최원국 ,  정형진 ,  오영제 ,  윤영수 ,  송재훈

IPC: H01C7/10

CPC classification number: H01C17/12 ,  G01K7/183 ,  H01J37/32082 ,  H01J37/3408

Abstract: PURPOSE: A cryogenic resistance thermometer thin film and a manufacturing method thereof are provided to simplify a manufacturing process and prevent air pollution. CONSTITUTION: A thin film is a (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance. The thin film is expressed by a linear equation in which a natural value to resistance value is within a predetermined error range to an absolute temperature in a low temperature area. The thin film may be La-Ca-Mn-O. The low temperature is 77K to 230K. The thin film may be La-Sr-Mn-O and the low temperature area is less than 300K. The error range is within 0.5. The thin film is formed on a substrate selected from the group consisting of a LaAlO3(001) substrate, MgO, Al2O3, SrTiO3 and Si containing substrate. The thin film is 30nm to 1000nm in thickness. The thin film of (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance is deposited on the substrate by an RF magnetron sputtering method and thermally treated at a temperature ranging from 600 to 1000°C for 0.5 to 24 hours.

Abstract translation: 目的：提供一种低温电阻温度计薄膜及其制造方法，以简化制造过程并防止空气污染。 构成：薄膜是具有巨大磁阻的（La，Nd和Pr）之一（Ca，Sr，Ba和Pb中的一种）-Mn-O。 薄膜由线性方程表示，其中电阻值的自然值在低温区域内的绝对温度的预定误差范围内。 该薄膜可以是La-Ca-Mn-O。 低温为77K〜230K。 薄膜可以是La-Sr-Mn-O，低温区域小于300K。 误差范围在0.5以内。 该薄膜形成在选自由LaAlO 3（001）衬底，MgO，Al 2 O 3，SrTiO 3和含Si衬底组成的组中的衬底上。 该薄膜的厚度为30nm至1000nm。 通过RF磁控溅射法将具有巨磁电阻的（La，Nd和Pr中的一种）（Ca，Sr，Ba和Pb中的一种） - Mn-O的薄膜沉积在衬底上，并在温度范围 在600〜1000℃下进行0.5〜24小时。

公开(公告)号：KR1020010013156A

公开(公告)日：2001-02-26

申请号：KR1019997011139

申请日：1998-11-21

Applicant: 한국과학기술연구원

Inventor： 고석근 ,  정형진 ,  최원국 ,  김기환 ,  하삼철 ,  김철환 ,  최성창

IPC: C23C4/00

CPC classification number: C23C16/30 ,  B05D1/62 ,  B05D5/083 ,  B05D2201/00 ,  B05D2203/30 ,  C23C16/503

Abstract: PURPOSE: A method for surface-processing by plasma polymerization of a surface of a metal by using a DC discharge plasma is provided, to form a polymer with hydrophilicity or hydrophobicity on the surface of the metal. CONSTITUTION: The method comprises the steps of: positioning an anode electrode which is substantially of metal to be surface-processed and a cathode electrode in a chamber; maintaining a pressure in the chamber at a predetermined vacuum level; blowing an unsaturated aliphatic hydrocarbon monomer gas or a fluorine-containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber; and applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas or the fluorine containing monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition.

Abstract translation: 目的：提供通过使用DC放电等离子体通过等离子体聚合金属表面进行表面处理的方法，以在金属的表面上形成具有亲水性或疏水性的聚合物。 构成：该方法包括以下步骤：将基本上要被表面处理的金属和阴极电极的阳极电极定位在腔室中; 将腔室中的压力保持在预定的真空度; 将预定压力的不饱和脂族烃单体气体或含氟单体气体以预定压力的不可聚合气体吹入室中; 向电极施加电压以获得DC放电，从而获得由不饱和脂族烃单体气体或含氟单体气体和非聚合气体产生的正离子和负离子和自由基组成的等离子体，以及 然后通过等离子体沉积在阳极电极的表面上形成具有亲水性或疏水性的聚合物。

公开(公告)号：KR1020000002283A

公开(公告)日：2000-01-15

申请号：KR1019980022956

申请日：1998-06-18

Applicant: 한국과학기술연구원

Inventor： 윤영수 ,  정형진 ,  최원국 ,  신영화

IPC: H01M6/46

Abstract: PURPOSE: A thin film battery manufacturing method is provided to improve the performance of the thin film battery such as the current density, the total current storing density, the charging speed and so forth. CONSTITUTION: The thin film battery manufacturing method comprises the steps of: forming a trench on a substrate; evaporating a lower collector on the trench; evaporating a cathode and an electrolyte film on the lower collector; evaporating an anode; evaporating an upper collector regardless of the flatting process or doing it after performing the encapsulation process; and connecting the cathode with the upper collector by performing the photolithography process.

Abstract translation: 目的：提供薄膜电池制造方法，以提高薄膜电池的性能，如电流密度，总电流存储密度，充电速度等。 构成：薄膜电池制造方法包括以下步骤：在基板上形成沟槽; 在沟槽上蒸发下集电极; 在下集电器上蒸发阴极和电解质膜; 蒸发阳极; 无论平整过程如何蒸发上集电器，或在执行封装工艺后进行; 并通过执行光刻工艺将阴极与上部集电体连接。