公开(公告)号：AU1188602A

公开(公告)日：2002-04-22

申请号：AU1188602

申请日：2001-10-10

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

公开(公告)号：AU5608700A

公开(公告)日：2001-01-22

申请号：AU5608700

申请日：2000-06-12

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  HAO FANGLI ,  LENZ ERIC

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/302

Abstract: A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

公开(公告)号：SG10201602732TA

公开(公告)日：2016-05-30

申请号：SG10201602732T

申请日：2012-08-17

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

公开(公告)号：SG10201407638RA

公开(公告)日：2015-01-29

申请号：SG10201407638R

申请日：2010-12-02

Applicant: LAM RES CORP

Inventor： GOTTSCHO RICHARD ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND

Abstract: SMALL PLASMA CHAMBER SYSTEMS AND METHODS A computer implemented method and a data center management appliance for simulating nonstandard operation of an element of a data center is provided. The method includes acts of determining a one data center resource affected by a data center element, selecting a simulator from a plurality of simulators based on the data center resource and the data center element and generating a impact analysis of the nonstandard operation of the data center element using the simulator. The data center management appliance includes a network interface, a memory and a controller coupled to the network interface and the memory. The controller is configured to detennine a data center resource affected by a data center element, select a simulator from a plurality of sill1ulators based on the data center resource and the data center element and generate a impact analysis of nonstandard operation of the data center element using the first simulator. FIG. 7

公开(公告)号：SG178288A1

公开(公告)日：2012-03-29

申请号：SG2012008314

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  KOSHISHI AKIRA ,  MARAKHTANOV ALEXEI

Abstract: An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

公开(公告)号：AT543204T

公开(公告)日：2012-02-15

申请号：AT04780271

申请日：2004-08-06

Applicant: LAM RES CORP

Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: H01L21/00 ,  B23B3/10 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：SG174501A1

公开(公告)日：2011-10-28

申请号：SG2011068269

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

公开(公告)号：SG173353A1

公开(公告)日：2011-08-29

申请号：SG2011049541

申请日：2007-07-06

Applicant: LAM RES CORP

Inventor： KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

Abstract: An apparatus is provided for semiconductor wafer plasma processing. Theapparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electricpotential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes. Figure 1

公开(公告)号：SG170007A1

公开(公告)日：2011-04-29

申请号：SG2011011939

申请日：2007-02-16

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND

Abstract: PROCESSING TUNING GAS INJECTION FROM THE SUBSTRATE EDGE Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In an exemplary embodiment, a plasma processing chamber is provided. The plasma processing chamber includes a substrate support configured to receive a substrate. The plasma processing chamber also includes an annular ring having a plurality of gas channels defined therein. The annular ring is proximate to an outer edge of the substrate support and the annular ring is coupled to the substrate support. The plurality of gas channels is connected to an edge gas plenum surrounding the substrate support. The edge gas plenum is connected to a central gas plenum disposed within and near the center of the substrate support through a plurality of gas supply channels.

公开(公告)号：DE60140893D1

公开(公告)日：2010-02-04

申请号：DE60140893

申请日：2001-10-10

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.