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    112.
    发明专利
    未知

    公开(公告)号：DE69433225D1

    公开(公告)日：2003-11-13

    申请号：DE69433225

    申请日：1994-04-27

    Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

    Inventor： MANCUSO MASSIMO ,  POLUZZI RINALDO ,  RIZZOTTO GIANGUIDO

    IPC: H04N5/92 ,  H04N5/44 ,  H04N9/80 ,  H04N11/20 ,  H04N1/00

    Abstract: A television signal scanning conversion device of the type comprising at least one filtering block (3) having a plurality of digital inputs (Pi, X) which receive through an interface (2) components (X, Pi) of an interlaced television signal comprises also at least one calculation block (CALC1) connected to the signal inputs and operating with fuzzy logic. Said calculation block is capable of executing a switch between at least two different interpolation procedures, to wit interfield and intrafield.

    113.
    发明专利
    未知

    公开(公告)号：DE69530208D1

    公开(公告)日：2003-05-08

    申请号：DE69530208

    申请日：1995-10-31

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： CAPICI SALVATORE V ,  MAGAZZU ANTONIO

    IPC: H02M3/155 ,  H03K5/00 ,  H03K6/04 ,  H03K7/08 ,  H03K3/00

    Abstract: Switching and propagation delays in generating a PWM control signal by a circuit that generally includes an error amplifier, a sawtooth oscillator and a comparator for comparing the error signal with said sawtooth signal, is compensated by generating a second sawtooth signal synchronous with the master sawtooth signal but having a reduced discharge time and by applying said second synchronous sawtooth signal to the respective input of the PWM comparator.

    115.
    发明专利
    未知

    公开(公告)号：DE69330556T2

    公开(公告)日：2002-05-16

    申请号：DE69330556

    申请日：1993-05-13

    Applicant: CONS RIC MICROELETTRONICA

    Inventor： ZAMBRANO RAFFAELE

    IPC: H01L21/822 ,  H01L27/04 ,  H01L27/02

    Abstract: An integrated structure protection circuit suitable for protecting a power device (M) against overvoltages comprises a plurality of serially connected junction diodes (D1-D5), each having a first electrode, represented by a highly doped region (1) of a first conductivity type, and a second electrode represented by a medium doped or low doped region (2) of a second conductivity type. A first diode (D1) of said plurality has its first electrode (1) connected to a gate layer (5) of said power device (M) and its second electrode (2) connected to the second electrode (2) of at least one second diode (D2-D5) of said plurality, and said at least one second diode has its first electrode (1) connected to a drain region of the power device (M). The doping level of the second electrode (2) of the diodes (D1-D5) of said plurality is suitable to achieve sufficiently high breakdown voltage values.

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