公开(公告)号：DE10155927A1

公开(公告)日：2003-06-05

申请号：DE10155927

申请日：2001-11-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIMME HANS-JOERG ,  NIKLAS ALFRED ,  AIGNER ROBERT ,  MECKES ANDREAS ,  ELBRECHT LUEDER ,  NESSLER WINFRIED ,  EHRLER GUENTER

IPC: H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/58

公开(公告)号：DE10149542A1

公开(公告)日：2003-04-17

申请号：DE10149542

申请日：2001-10-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  HANDTMANN MARTIN

IPC: H03H9/00 ,  H03H9/17 ,  H03H9/58 ,  H03H9/15

Abstract: A bulk acoustic wave resonator has a first piezoelectric layer (PL) (106) made from material that is oriented in a first direction and a second PL (108) made from material that is oriented in a second direction opposed to the first direction. A substrate (100) has a first main surface (102) to support a first metal/conductive connector electrode (MCCE) (104) with the first and second PLs. A second MCCE (110) rests on the second PL. An Independent claim is also included for a bulk acoustic wave filter with one or more bulk acoustic resonators.

公开(公告)号：DE10151130C1

公开(公告)日：2003-02-13

申请号：DE10151130

申请日：2001-10-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OPPERMANN KLAUS-GUENTER ,  KAPELS HERGEN ,  AIGNER ROBERT ,  MECKES ANDREAS

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/311

Abstract: Production of a micromechanical component (9) having a moving structure (3) comprises: preparing the component with the structure embedded in a layer (2); partially exposing the embedded structure by forming a recess in the layer to produce a fixed region; fixing the structure opposite the fixed region using a lacquer (7); removing the remaining layer in the region of the moving structure; inserting the component into a receiver; introducing a solvent into the receiver to remove the lacquer; introducing a liquid soluble in the solvent into the receiver; heating the receiver above the critical temperature of the liquid to convert it into a gas phase; and removing the gas with the solvent from the receiver. Preferred Features: The layer (2) is made from silicon dioxide. The step of partially exposing the embedded structure is carried out by back etching. The lacquer is a photolacquer. The solvent is an organic solvent. The liquid which is converted into the gas phase is CO2 or a halogen-carbon compound, preferably CClF3.

公开(公告)号：DE10124349A1

公开(公告)日：2002-12-05

申请号：DE10124349

申请日：2001-05-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED ,  ELBRECHT LUEDER

IPC: H03H3/04 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H03H9/25 ,  H03H9/64 ,  H03H3/08

Abstract: A resonator device comprises a piezoelectric resonator (10) with a detuning layer sequence (52), arranged on the piezoelectric resonator (10). The detuning layer sequence (52) comprises at least one first layer (52A) with a high acoustic impedance and a second layer (52B) with a low acoustic impedance.

公开(公告)号：DE10052419A1

公开(公告)日：2002-05-16

申请号：DE10052419

申请日：2000-10-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MARKSTEINER STEPHAN ,  AIGNER ROBERT

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00

Abstract: Production of a micromechanical component comprises applying an auxiliary layer (2) and a membrane layer (3) with an etch hole (4) on a substrate; applying a spacer layer (5); anisotropically back-etching the spacer layer so that a spacer is formed in the etch hole; etching the auxiliary layer through the etch hole to form a hollow chamber (7) in the auxiliary layer; and applying a sealing layer (8) to seal the hollow chamber. Preferred Features: A etch stop layer is applied to the membrane layer and the accessible parts of the auxiliary layer before anisotropic back-etching is carried out. The substrate is made from silicon. The sealing layer and the membrane layer are made from polysilicon, silicon nitride or silicon oxide. The etch stop layer is made from silicon nitride.