公开(公告)号：DE102006034847A1

公开(公告)日：2007-10-31

申请号：DE102006034847

申请日：2006-07-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN

IPC: H01L21/44 ,  H01L23/48 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42

Abstract: The semiconductor chip has a contact layer (6) extended over a barrier layer (5) and over a connection layer (4) of a semiconductor layer sequence. The contact layer is connected with an active area in an electrically conducting manner over a connection area (7) of the connection layer. An electrical contact resistance of the contact layer to the connection layer is smaller than an electrical contact resistance of the contact layer to the barrier layer. The contact layer within a barrier area (8) is bordered on the barrier layer. An independent claim is also included for a method for manufacturing a contact structure for an opto-electronic semiconductor chip for generating radiation.

公开(公告)号：DE102005061797A1

公开(公告)日：2007-07-05

申请号：DE102005061797

申请日：2005-12-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS ,  WIRTH RALPH ,  HAHN BERTHOLD ,  AHLSTEDT MAGNUS ,  ALBRECHT TONY ,  ILLEK STEFAN

IPC: H01L33/14 ,  H01L33/42

Abstract: A luminescence diode chip has a semiconductor layer sequence suitable for generation of electromagnetic radiation, and at least one current barrier which is formed of semiconductor material of the epitaxial semiconductor layer sequence and of material of the current expansion layer and/or by a boundary surface between the semiconductor layer sequence and the current expansion layer. An independent claim is included for a method for fabricating a luminescence diode chip.

公开(公告)号：DE102005029246A1

公开(公告)日：2006-10-12

申请号：DE102005029246

申请日：2005-06-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROLIER VINCENT ,  ILLEK STEFAN ,  PLOESL ANDREAS

IPC: H01L23/482 ,  H01L21/60 ,  H01L33/62

Abstract: The chip has a series of layer provided for establishing a solder connection. The series of layer comprises of a solder layer (15) and a oxidation protection layer that is adjacent to the solder layer and seen from outside of the semiconductor chip. A barrier layer is held between the solder layer and oxidation protection layer. Another barrier layer is arranged between the moistening layer and the solder layer. An independent claim is also included for a method for formation of a solder connection between a carrier and a semiconductor chip.