TRANSLATING Z AXIS ACCELEROMETER
    112.
    发明申请
    TRANSLATING Z AXIS ACCELEROMETER 审中-公开
    翻转Z轴加速度计

    公开(公告)号:WO2016122960A1

    公开(公告)日:2016-08-04

    申请号:PCT/US2016/014300

    申请日:2016-01-21

    Abstract: A system and method for providing a MEMS sensor are disclosed. In a first aspect, the system is a MEMS sensor that comprises a substrate, an anchor region coupled to the substrate, at least one support arm coupled to the anchor region, at least two guiding arms coupled to and moving relative to the at least one support arm, a plurality of sensing elements disposed on the at least two guiding arms to measure motion of the at least two guiding arms relative to the substrate, and a proof mass system comprising at least one mass coupled to each of the at least two guiding arms by a set of springs. The proof mass system is disposed outside the anchor region, the at least one support arm, the at least two guiding arms, the set of springs, and the plurality of sensing elements.

    Abstract translation: 公开了一种用于提供MEMS传感器的系统和方法。 在第一方面,该系统是MEMS传感器,其包括衬底,耦合到衬底的锚定区域,耦合到锚定区域的至少一个支撑臂,耦合到并相对于至少一个 支撑臂,设置在所述至少两个引导臂上的多个感测元件,以测量所述至少两个引导臂相对于所述基底的运动;以及证明质量系统,其包括耦合到所述至少两个引导件 武器由一套弹簧。 检测质量系统设置在锚定区域外部,至少一个支撑臂,至少两个引导臂,该组弹簧和多个感测元件。

    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP
    113.
    发明申请
    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP 审中-公开
    单芯片的惯性和压力传感器

    公开(公告)号:WO2015051084A1

    公开(公告)日:2015-04-09

    申请号:PCT/US2014/058765

    申请日:2014-10-02

    Abstract: In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.

    Abstract translation: 根据一个实施例,单芯片组合惯性和压力传感器装置包括基板,包括可移动地支撑在基板上方的可移动感测结构的惯性传感器和邻近可移动检测结构定位的第一固定电极,以及压力传感器 包括在所述传感器中形成在所述可移动检测结构正上方的位置处的间隙以及形成在所述装置的盖层中的柔性膜,所述柔性膜限定所述间隙的边界并且被配置为朝向和远离所述间隙弯曲 响应于柔性膜上方的压力变化。

    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP
    114.
    发明申请
    INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP 审中-公开
    单芯片的惯性和压力传感器

    公开(公告)号:WO2015020881A1

    公开(公告)日:2015-02-12

    申请号:PCT/US2014/049210

    申请日:2014-07-31

    Abstract: In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.

    Abstract translation: 在一个实施例中,电容式压力传感器的工艺流程与惯性传感器的工艺流程相结合。 以这种方式,在压力传感器的膜层内实现惯性传感器。 器件层同时用作惯性传感器中的平面外感测的z轴电极,和/或用作惯性传感器的布线层。 压力传感器工艺流程的膜层(或盖层)用于定义惯性传感器感测结构。 膜层中的绝缘氮化物塞用于电耦合用于多轴惯性传感器的各种感测结构,允许完全差分感测。

    センサ素子及びセンサ素子の製造方法
    117.
    发明申请
    センサ素子及びセンサ素子の製造方法 审中-公开
    传感器元件和传感器元件的制造方法

    公开(公告)号:WO2012063818A1

    公开(公告)日:2012-05-18

    申请号:PCT/JP2011/075717

    申请日:2011-11-08

    Abstract:  大きな衝撃が加わった場合でも、可撓部と重錘との境界領域及び可撓部と支持部との境界領域に亀裂が入ることを抑制する傾斜面部を設けても、感度がバラつかないセンサ素子及びセンサ素子の製造方法を提供する。可撓部の厚み寸法は、10μm以下とする。重錘の主外壁面部の最大直径をRとしたときに、傾斜内壁面部を、可撓面と連続する一端と、主内壁面部を含み且つ交差方向に延びる第1の仮想筒状面との間の最短距離が0.04R~0.16Rとなるように形成する。傾斜外壁面部を、可撓面と連続する一端と、主外壁面部を含み且つ主内壁面部に沿って延びる第2の仮想筒状面との間の最短距離が、0.02R~0.08Rとなるように形成する。

    Abstract translation: 提供了一种传感器元件,其灵敏度即使在施加大的冲击时也不变化,并且即使当用于防止在柔性部分和铅锤之间的边界区域上形成裂纹的倾斜表面以及在 柔性部分和支撑部分被布置。 还提供了一种用于制造传感器元件的方法。 柔性部分的厚度为10μm以下。 形成倾斜的内壁表面,使得其与柔性表面邻接的端部与包含主内壁表面并在与前述端部相交的方向上延伸的第一虚拟管状表面之间的最短距离为0.04R至 0.16 R,当R表示铅锤的主外壁表面的最大直径时。 形成倾斜的外壁表面,使得其与柔性表面邻接的端部与包含主外壁表面并沿着主内壁表面延伸的第二虚拟管状表面之间的最短距离为0.02R至0.08R。

    METHOD FOR MAKING A GAS PERMEABLE ENCLOSURE FOR MICROMACHINE DEVICES
    118.
    发明申请
    METHOD FOR MAKING A GAS PERMEABLE ENCLOSURE FOR MICROMACHINE DEVICES 审中-公开
    用于制造微孔装置的气体渗透外壳的方法

    公开(公告)号:WO2003063223A1

    公开(公告)日:2003-07-31

    申请号:PCT/US2002/040895

    申请日:2002-12-19

    Abstract: A method (72) for coating (42) a micro-electromechanical system (MEMS) device is provided. A coating material, such as a ceramic slurry, may be utilized to form a gas permeable enclosure or shell around the device. At step 74, the device may be attached to a substrate and at step 76, a vacuum is applied near the device to exert an atractive force on the coating material to aid in homogenously distributing the coating material over the device. In addition, a vibration may be applied to the device in the step 78 to aid in distributing the coating material. If the device attached to a substrate, a hole may be formed through the substrate with one opening near the device and a second opening located elsewhere. The vacuum may be applied to the second opening to draw the coating material, which is poured over the device in step 80 and towards the first opening.

    Abstract translation: 提供了一种用于涂覆(42)微机电系统(MEMS)装置的方法(72)。 可以使用诸如陶瓷浆料的涂层材料在装置周围形成气体可渗透的外壳或外壳。 在步骤74,装置可以附接到基底上,并且在步骤76处,在装置附近施加真空,以在涂层材料上施加收敛力,以帮助均匀地将涂层材料分布在装置上。 此外,可以在步骤78中对装置施加振动,以帮助分配涂层材料。 如果装置附接到基板,则可以通过基板形成一个孔,在该装置附近有一个开口,另一个开口位于其他位置。 可以将真空施加到第二开口以拉伸涂料,其在步骤80中倾倒在装置上并且朝向第一开口。

    THREE-AXES SENSOR AND A METHOD OF MAKING SAME
    119.
    发明申请
    THREE-AXES SENSOR AND A METHOD OF MAKING SAME 审中-公开
    三轴传感器及其制造方法

    公开(公告)号:WO0210684A9

    公开(公告)日:2003-03-27

    申请号:PCT/US0124200

    申请日:2001-07-30

    Abstract: A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beamstructures for at least two orthogonally arranged sensors and associated mating structures aredefined on a first substrate or wafer, the at least two orthogonally arranged sensors havingorthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is alsodefined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonatorstructure having a mating structure thereon. Contact structures for at least two orthogonallyarranged sensors are formed together with mating structures on a second substrate or wafer, themating structures on the second substrate or wafer being of a complementary shape to the matingstructures on the first substrate or wafer. The mating structures of the first substrate aredisposed in a confronting relationship with the mating structures of the second substrate orwafer. A eutectic bonding layer associated with one of the mating structures facilitates bondingbetween the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.

    Abstract translation: 三轴MEM隧道/电容传感器及其制造方法。 用于至少两个正交布置的传感器和相关联的配合结构的悬臂梁结构被定义在第一衬底或晶片上,所述至少两个正交布置的传感器具有传感器灵敏度的正交方向。 至少第三传感器的谐振器结构被编码,第三传感器在垂直于两个正交布置的传感器的传感器灵敏度的正交方向的第三方向和在其上具有匹配结构的谐振器结构的敏感。 至少两个正交分布的传感器的接触结构与第二衬底或晶片上的配合结构一起形成,第二衬底或晶片上的主题结构与第一衬底或晶片上的匹配结构互补形状。 第一衬底的配合结构以与第二衬底或第二衬底的配合结构相对的关系表示。 与一个配对结构相关联的共晶粘合层便于各个配合结构之间的结合。 去除第一衬底或晶片的至少一部分以释放悬臂梁结构和谐振器结构。

Patent Agency Ranking