Abstract:
실시예들에서, 패키지 어셈블리는 활성면 및 비활성면을 구비하는 마이크로 전자기계 시스템(MEMS) 및 주문형 집적 회로(ASIC)를 포함할 수 있다. 실시예들에서, MEMS는 하나 이상의 인터커넥트를 거쳐 ASIC에 직접 연결될 수 있다. MEMS, ASIC, 및 하나 이상의 인터커넥트는 캐비티를 정의하거나 형성함으로써 MEMS의 활성면 일부가 캐비티 내에 존재한다. 일부 실시예들에서, 패키지 어셈블리는 복수의 하나 이상의 인터커넥트를 거쳐 ASIC에 직접 연결된 복수의 MEMS를 포함할 수 있다. 다른 실시예들이 설명되고/되거나 특허청구될 수 있다.
Abstract:
A system and method for providing a MEMS sensor are disclosed. In a first aspect, the system is a MEMS sensor that comprises a substrate, an anchor region coupled to the substrate, at least one support arm coupled to the anchor region, at least two guiding arms coupled to and moving relative to the at least one support arm, a plurality of sensing elements disposed on the at least two guiding arms to measure motion of the at least two guiding arms relative to the substrate, and a proof mass system comprising at least one mass coupled to each of the at least two guiding arms by a set of springs. The proof mass system is disposed outside the anchor region, the at least one support arm, the at least two guiding arms, the set of springs, and the plurality of sensing elements.
Abstract:
In accordance with one embodiment, a single chip combination inertial and pressure sensor device includes a substrate, an inertial sensor including a movable sensing structure movably supported above the substrate, and a first fixed electrode positioned adjacent to the movable sensing structure, and a pressure sensor including a gap formed in the sensor at a location directly above the movable sensing structure, and a flexible membrane formed in a cap layer of the device, the flexible membrane defining a boundary of the gap and configured to flex toward and away from the gap in response to a variation in pressure above the flexible membrane.
Abstract:
In one embodiment, the process flow for a capacitive pressures sensor is combined with the process flow for an inertial sensor. In this way, an inertial sensor is realized within the membrane layer of the pressure sensor. The device layer is simultaneously used as z-axis electrode for out-of-plane sensing in the inertial sensor, and/or as the wiring layer for the inertial sensor. The membrane layer (or cap layer) of the pressure sensor process flow is used to define the inertial sensor sensing structures. Insulating nitride plugs in the membrane layer are used to electrically decouple the various sensing structures for a multi-axis inertial sensor, allowing for fully differential sensing.
Abstract:
In embodiments, a package assembly may include an application-specific integrated circuit (ASIC) and a microelectromechanical system (MEMS) having an active side and an inactive side. In embodiments, the MEMS may be coupled directly to the ASIC by way of one or more interconnects. The MEMS, ASIC, and one or more interconnects may define or form a cavity such that the active portion of the MEMS is within the cavity. In some embodiments, the package assembly may include a plurality of MEMS coupled directly to the ASIC by way of a plurality of one or more interconnects. Other embodiments may be described and/or claimed.
Abstract:
A method (72) for coating (42) a micro-electromechanical system (MEMS) device is provided. A coating material, such as a ceramic slurry, may be utilized to form a gas permeable enclosure or shell around the device. At step 74, the device may be attached to a substrate and at step 76, a vacuum is applied near the device to exert an atractive force on the coating material to aid in homogenously distributing the coating material over the device. In addition, a vibration may be applied to the device in the step 78 to aid in distributing the coating material. If the device attached to a substrate, a hole may be formed through the substrate with one opening near the device and a second opening located elsewhere. The vacuum may be applied to the second opening to draw the coating material, which is poured over the device in step 80 and towards the first opening.
Abstract:
A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beamstructures for at least two orthogonally arranged sensors and associated mating structures aredefined on a first substrate or wafer, the at least two orthogonally arranged sensors havingorthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is alsodefined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonatorstructure having a mating structure thereon. Contact structures for at least two orthogonallyarranged sensors are formed together with mating structures on a second substrate or wafer, themating structures on the second substrate or wafer being of a complementary shape to the matingstructures on the first substrate or wafer. The mating structures of the first substrate aredisposed in a confronting relationship with the mating structures of the second substrate orwafer. A eutectic bonding layer associated with one of the mating structures facilitates bondingbetween the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.