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公开(公告)号：KR100962431B1
公开(公告)日：2010-06-14
申请号：KR1020080083183
申请日：2008-08-26
Applicant: 한국화학연구원
Abstract: 본 발명은 하기 화학식 1로 표시되는 알루미늄 아미노 알콕사이드 화합물 및 그 제조방법에 관한 것이다.
[화학식 1]
[상기 화학식 1에서, A는 C2-C5의 알킬렌이고; 상기 A는 하나 이상의 C1-C5의 선형 또는 분지형 알킬기로 더 치환될 수 있고; R
1 및 R
2 는 서로 독립적으로 수소 또는 C1-C5의 선형 또는 분지형 알킬기이고; R
3 는 C1-C5의 선형 또는 분지형 알킬기 또는 트리(C1-C5)알킬실릴기이다.]
본 발명에 따르는 알루미늄 아미노 알콕사이드 화합물은 산화알루미늄 선구 물질로서 상온에서 고체 상태로 존재하며 낮은 온도에서 높은 증기압을 가지는 특성을 나타냄으로 알루미늄을 포함하는 물질의 박막 증착 또는 여러 가지 합금 증착에 알루미늄 원료 물질로 유용하게 사용될 수 있다.
알루미늄, 알루미늄 산화물, 알루미늄 산화물 선구물질, 박막, 유기금속 화학기상 증착법(MOCVD), 원자층 증착법(ALD)-
公开(公告)号：KR1020100054317A
公开(公告)日：2010-05-25
申请号：KR1020080113192
申请日：2008-11-14
Applicant: 한국화학연구원
IPC: C01F7/00
CPC classification number: C07F5/06
Abstract: PURPOSE: Novel aluminum alkoxide compounds and a preparing method thereof are provided, which can obtain heat stability and excellent volatility and enable manufacture of a film of the high purity containing aluminum. CONSTITUTION: An aluminium alkoxide compound is represented as the chemical formula 1, Al(O-A-NR^1R^2)_x(R^3)_3-x. In the chemical formula 1, A is alkylene of C2-C5 and is substituted for linear or branched alkyl of one or more C1-C5, R^1 to R^3 are independently linear or branched alkyl of C1-C5, and X is fixed number of 1 to 3. The manufacturing method of the aluminium alkoxide compound is to react aluminum compound of the chemical formula 3, AlR^3_3 and alcohol of the chemical formula 4, HO-A-NR^1R^2.
Abstract translation: 目的：提供新的烷氧基铝化合物及其制备方法，其可以获得热稳定性和优异的挥发性，并且能够制造含有高纯度的铝的膜。 构成：烷氧化铝化合物表示为化学式1，Al（O-A-NR 1 R 1）2（X 3）3-x。 在化学式1中，A是C 2 -C 5的亚烷基并且被一个或多个C 1 -C 5的直链或支链烷基取代，R 1至R 3独立地是C1-C5的直链或支链烷基，X是 固定数量为1〜3。烷氧基铝化合物的制造方法是使化学式3的铝化合物，AlR 3 3 3和化学式4的醇HO-A-NR 1 1R 2。
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公开(公告)号：KR1020100054300A
公开(公告)日：2010-05-25
申请号：KR1020080113164
申请日：2008-11-14
Applicant: 한국화학연구원
IPC: C01G27/00
Abstract: PURPOSE: A novel hafnium alkoxide compounds and a preparing method thereof are provided, in which compounds are thermally stable, have high volatility, and enhance reactivity with the ozone. CONSTITUTION: A novel hafnium alkoxide compound is represented as the chemical formula 1, HF(OCR^1R^2R^3)_4. In the chemical formula 1, R^1 and R2 are independently the linear or branched alkyl group of C1-C5, R^3 is linear alkenyl or alkynyl group of C2-C5. R^1 and R2 are independently selected from CH_3, C2H5, and CH(CH_3)2 or C(CH_3)3, and R^3 is C≡CH, CH_2C≡CH, CH_2CH_2C≡CH, C≡CCH_3, CH_2C≡CCH_3 or CH_2CH_2C≡CCH_3. The manufacturing method of the hafnium alkoxide compound of the chemical formula 1 is to react hafnium amide compound of the chemical formula 2, Hf(NR^4R^5)_4 and alcohol compound of the chemical formula 3, HOCR^1R^2R^3.
Abstract translation: 目的：提供一种新型的铪醇盐化合物及其制备方法，其中化合物是热稳定的，具有高挥发性，并增强与臭氧的反应性。 构成：一种新的铪醇盐化合物以化学式1表示，HF（OCR 1 R 1 R 2 R 3）4。 在化学式1中，R 1和R 2独立地是C 1 -C 5的直链或支链烷基，R 3是C 2 -C 5的直链烯基或炔基。 R 1和R 2独立地选自CH 3，C 2 H 5和CH（CH 3）2或C（CH 3）3，R 3是C≡CH，CH 2C≡CH，CH 2 CH 2C≡CH，C≡CCH3，CH 2C≡CCH3 或CH 2 CH 2C≡CCH3。 化学式1的铪醇盐化合物的制造方法是使化学式2的铪酰胺化合物，Hf（NR 4 4R 5）4和化学式3的HO化合物HOCR 1 1R 2 2R 3 。
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公开(公告)号：KR1020100025870A
公开(公告)日：2010-03-10
申请号：KR1020080084602
申请日：2008-08-28
Applicant: 한국화학연구원
IPC: C23C16/18 , C23C16/455
Abstract: PURPOSE: A method for manufacturing copper thin films using copper precursor by an atomic layer deposition process is provided to manufacture a thin film which has exact composition and has uniform thickness. CONSTITUTION: A method for manufacturing copper thin films using copper precursor by an atomic layer deposition process comprises following steps. The copper amino alkoxide is supplied to an atomic layer deposition reactor and copper chemical species are adsorbed on a substrate. Copper element and reaction by-products which do not react are eliminated from the reactor. Ligand is removed from the substrate by supplying hydrogen plasma to the reactor. The reaction by-product is eliminated from the reactor.
Abstract translation: 目的：提供一种通过原子层沉积工艺制造使用铜前体的铜薄膜的方法，以制造具有精确组成并具有均匀厚度的薄膜。 构成：通过原子层沉积工艺制造使用铜前体的铜薄膜的方法包括以下步骤。 将铜氨基醇盐供应到原子层沉积反应器中，并将铜化学物质吸附在基底上。 从反应器中除去铜元素和不反应的反应副产物。 通过向反应器供应氢等离子体，将配体从基板上除去。 反应副产物从反应器中排除。
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公开(公告)号：KR1020090076211A
公开(公告)日：2009-07-13
申请号：KR1020080002020
申请日：2008-01-08
Applicant: 한국화학연구원
CPC classification number: C01G11/00 , B82Y30/00 , B82Y40/00 , C01P2004/64
Abstract: A method for manufacturing nano-sized cadmium and cadmium chalcogenide colloid in an organic solvent is provided to show excellent dispersibility in organic solvents, crystalline and purity as well as uniform particle size distribution. A method for manufacturing nano-sized cadmium and cadmium chalcogenide colloid in an organic solvent comprises: a first step of heating a reactant containing cadmium aminoalkoxide compounds in order to transform it to a cadmium-containing nanoparticle; and a second step of separating the obtained cadmium-containing nanoparticle. The reactant containing a precursor material selected among S, Se and Te can be added in the first step and therefore cadmium chalcogenide nanoparticles are obtained.
Abstract translation: 提供了一种在有机溶剂中制造纳米尺寸的镉和镉硫族化物胶体的方法，以显示在有机溶剂中的优异分散性，结晶和纯度以及均匀的粒度分布。 在有机溶剂中制造纳米尺寸的镉和镉硫族化物胶体的方法包括：加热含有氨基喔啉化合物的反应物以便将其转化为含镉纳米颗粒的第一步骤; 以及分离所得到的含镉纳米粒子的第二工序。 可以在第一步骤中加入含有从S，Se和Te中选择的前体材料的反应物，因此得到硫属镉的纳米粒子。
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Patent Agency Ranking
公开(公告)号：KR1020090073289A
公开(公告)日：2009-07-03
申请号：KR1020070141190
申请日：2007-12-31
Applicant: 한국화학연구원
Abstract: A cadmium aminoalkoxide compound is provided to manufacture the nano size of cadmium, cadmium oxide, and cadmium chalcogenide at low temperature. A method for manufacturing the cadmium aminoalkoxide compound of chemical formula 1 is reacting an alkyl cadmium compound of the chemical formula 2 and amino alcohol of the chemical formula 3. The chemical formulas 1, 2, and 3 are denoted by [R3-Cd-(O-A-NR1R2)]4, Cd(R3)2, and HO-A-NR1R2, respectively. In the chemical formula 1,2 and 3, the A is linear or branched (C2-C10) alkylene group which is non-substituted or substituted with a halogen. The R1 and R2 is each linear or branched (C1-C7) alkyl group which is non-substituted or substituted with the halogen. Or a hetero ring is formed by binding R1 and R2 with (C4-C6) alkylene. The R3 is linear or branched (C1-C7) alkyl group.
Abstract translation: 提供了一种镉氨基烷氧基化合物，以在低温下制造镉，氧化镉和硫属镉的纳米尺寸。 制备化学式1的氨基二氧化镉化合物的方法是使化学式2的烷基镉化合物与化学式3的氨基醇反应。化学式1,2和3由[R 3 -CD-（ OA-NR1R2）] 4，Cd（R3）2和HO-A-NR1R2。 在化学式1,2和3中，A是未被取代或被卤素取代的直链或支链（C2-C10）亚烷基。 R1和R2分别是不被卤素取代或取代的直链或支链（C1-C7）烷基。 或者通过将R 1和R 2与（C 4 -C 6）亚烷基结合形成杂环。 R3是直链或支链（C1-C7）烷基。
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公开(公告)号：KR100897495B1
公开(公告)日：2009-05-15
申请号：KR1020070102354
申请日：2007-10-11
Applicant: 한국화학연구원
IPC: C07F5/00
Abstract: 본 발명은 하기 화학식 1로 표시되는 신규의 갈륨 아미노알콕사이드 화합물 및 그 제조방법에 관한 것이다.
[화학식 1]
[상기 화학식 1에서, A는 C
2 -C
5 의 알킬렌이고, 상기 A는 하나 이상의 C
1 -C
5 의 선형 또는 분지형 알킬기로 더 치환될 수 있고; R
1 및 R
2 는 서로 독립적으로 수소 또는 C
1 -C
5 의 선형 또는 분지형 알킬기이고; R
3 는 C
1 -C
5 의 선형 또는 분지형 알킬기 또는 트리(C
1 -C
5 )알킬실릴기이다.]
본 발명에 따르는 갈륨 화합물은 갈륨 또는 산화 갈륨의 선구 물질로서 상온에서 고체 상태로 존재하며 낮은 온도에서 승화되는 특성을 나타냄으로 갈륨을 포함하는 물질의 박막 증착 또는 여러 가지 합금 제조에 갈륨 원료 물질로 유용하게 사용될 수 있다.
갈륨, 갈륨 산화물 선구물질, 갈륨 산화물, 박막, 유기금속 화학기상 증착법(MOCVD), 원자층 증착법(ALD)-
公开(公告)号：KR100803950B1
公开(公告)日：2008-02-18
申请号：KR1020060093970
申请日：2006-09-27
Applicant: 한국화학연구원
IPC: H01L21/205 , H01L21/3065
CPC classification number: H01L21/02554 , C23C16/513 , H01L21/0262
Abstract: A method for forming a p-type zinc oxide layer using plasma enhanced metal organic chemical vapor deposition is provided to adjust a doping concentration by controlling a dose of an organic metal compound of a group-V element. After a substrate(20) is put in a reactor(10) and then an oxygen source and an argon gas are inputted to the reactor, an RF power is applied to the reactor to produce a plasma in the reactor. A zinc precursor and a group-V precursor as a dopant are inputted to the reactor to form a p-type zinc oxide layer on the substrate. The heat treatment is performed on a substrate with the p-type zinc oxide layer. When the p-type zinc oxide layer is formed, a temperature of the substrate is in the range of 200 to 400 degrees centigrade.
Abstract translation: 提供了使用等离子体增强金属有机化学气相沉积形成p型氧化锌层的方法，通过控制V族元素的有机金属化合物的剂量来调节掺杂浓度。 将基板（20）放入反应器（10）中，然后将氧源和氩气输入到反应器中，向反应器施加RF功率以在反应器中产生等离子体。 将锌前体和作为掺杂剂的V族前体输入到反应器中，以在衬底上形成p型氧化锌层。 在具有p型氧化锌层的基板上进行热处理。 当形成p型氧化锌层时，基板的温度在200至400摄氏度的范围内。
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公开(公告)号：KR100774614B1
公开(公告)日：2007-11-12
申请号：KR1020060042840
申请日：2006-05-12
Applicant: 한국화학연구원
IPC: H01L21/205 , B82B3/00 , B82Y40/00
CPC classification number: H01L21/02603 , H01L21/02554 , H01L21/0262
Abstract: A method for manufacturing a zinc oxide nano needle structure is provided to grow the zinc oxide nano needle structure without using a catalyst by changing a temperature of a substrate in two steps in a chemical vapor deposition process. An SAM(Self-Assembled Molecule) film is patterned on a substrate. A zinc source and an oxygen source are introduced on the substrate and a CVD(Chemical Vapor Deposition) process is performed on the substrate except for a region for the SAM, so that a zinc oxide seed layer is formed. A CVD process is performed on the zinc oxide seed layer, so that a zinc oxide nano needle is vertically grown on the zinc oxide seed layer. The SAM is performed by a micro-contact printing scheme.
Abstract translation: 提供了一种制造氧化锌纳米针结构的方法，用于通过在化学气相沉积工艺中两步改变衬底的温度来生长氧化锌纳米针结构而不使用催化剂。 将SAM（自组装分子）膜图案化在衬底上。 在基板上引入锌源和氧源，在除了SAM的区域之外的基板上进行CVD（化学气相沉积）处理，形成氧化锌种子层。 在氧化锌种子层上进行CVD处理，使氧化锌纳米针在氧化锌种子层上垂直生长。 SAM通过微接触打印方案执行。
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公开(公告)号：KR100582921B1
公开(公告)日：2006-05-24
申请号：KR1020030071026
申请日：2003-10-13
Applicant: 한국화학연구원
Abstract: 본 발명은 구리 및 니켈 금속 나노 입자를 제조하는 방법에 관한 것으로, 본 발명에 따르면 자체 열분해가 가능한 아미노알콕시 금속 착화합물을 선구 물질로 사용하여, 외부로부터 환원제를 넣지 않고, 녹는점이 낮고 비등점이 높으며 배위 가능한 원소를 포함하는 덮개 리간드를 이용하여, 금속 입자의 크기 및 형상을 제어할 수 있다.
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