公开(公告)号：JPS62180616A

公开(公告)日：1987-08-07

申请号：JP2328886

申请日：1986-02-04

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  UZAWA SHUNICHI ,  NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI

IPC: H03K17/00 ,  H03K17/296 ,  H03M9/00

Abstract: PURPOSE:To obtain a serial output signal with an excellent S/N even when lots of parallel inputs are used by sending an output from the 1st and 2nd switch means to a differential means via the 1st and 2nd buffer means. CONSTITUTION:Arranged sensors are split into n-set of blocks and a sensor output of each block is outputted serially to a differential amplifier 112 from an Sig terminal and a Comp terminal sequentially. When the read of, e.g., a switch array #1 is finished, an H level is outputted from an Sout terminal to an Sin terminal of a switch array #2 of the next switch array and the read of the 2nd block is executed by the switch array #2 succeedingly. In this case, since a buffer (comprising transistors 110 and 111) of switch arrays except the switch array #2 is turned off, only the outputs at the Sig and Comp terminals of the switch array #2 is inputted to the differential amplifier 112 without being affected. Similarly, the sensor output of all sensor sections 301 is outputted serially from the differential amplifier 112.

公开(公告)号：JPS62180613A

公开(公告)日：1987-08-07

申请号：JP2328486

申请日：1986-02-04

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  UZAWA SHUNICHI ,  NAKAGAWA KATSUMI ,  KOMATSU TOSHIYUKI

IPC: H03K17/00 ,  H03K17/296 ,  H03M9/00

Abstract: PURPOSE:To obtain a serial read signal with excellent S/N by using the 2nd switch means operated at the same time as the 1st switch means so as to generate a noise similar to that from the 1st switch means and using a differential means so as to eliminate the said noise. CONSTITUTION:Two switch elements (transfer switch element 5 and reset switch element 6) are connected at each charge storage capacitor in a switch element section 3 and elements such as TFTs are used as the switch elements. A gate driver 9 drives one by one gate of the switch element section 3 at each block and the transfer switch element 5 is turned on and the reset switch element 6 of the preceding bit is also turned on. As a result, the electric charge in the charge storage capacitor is stored in a capacitor 7 via the transfer switch element 5 respectively and the charge storage capacitor of the preceding bit is refreshed. The electric charge stored n the capacitor 7 is outputted serially to a differential amplifier 12 via a switch array 11.

公开(公告)号：JP2000338299A

公开(公告)日：2000-12-08

申请号：JP14962199

申请日：1999-05-28

Applicant: MITSUBISHI ELECTRIC CORP ,  CANON KK

Inventor： ITOGA KENJI ,  KITAYAMA TOYOKI ,  WATANABE YUTAKA ,  UZAWA SHUNICHI

IPC: G21K5/02 ,  G03F7/20 ,  G21K1/06 ,  G21K1/10 ,  G21K5/04 ,  H05H13/04

Abstract: PROBLEM TO BE SOLVED: To make it possible to realize the high-definition transcription of patterns and high throughput by providing an X-ray mirror containing a material that has an absorption edge in only one, at least, of the first wavelength range where a wavelength is shorter than a specific value to X rays and the second wavelength range where a wavelength exceeds a specific value to X rays. SOLUTION: For instance, an X-ray aligner has a synchrotron radiation source 1 and an x-ray mirror 3 made by forming a thin-film diamond layer on a silicon substrate, for example. The X-ray mirror 3 securely reflects because it does not have an absorption peak in the wavelength range between 0.45 nm and 0.7 nm inclusive and the X-ray reflectance of the mirror 3 plunges in the wavelength range that is 0.45 nm or shorter. Consequently, the peak wavelength of X rays used for exposure is adjusted to the high-definition transcription of circuit patterns and high throughput and the degradation of resolution due to photoelectrons is prevented by decreasing the content of X rays whose wavelength is shorter than a peak wavelength. Boron nitride, diamond-like carbon, titanium and the like are also used as a material for the mirror 3.

公开(公告)号：JP2000138160A

公开(公告)日：2000-05-16

申请号：JP32296698

申请日：1998-10-29

Applicant: CANON KK

Inventor： CHIBA KEIKO ,  AMAMIYA MITSUAKI ,  UZAWA SHUNICHI ,  WATANABE YUTAKA

IPC: H01L21/027 ,  G03F1/22 ,  G03F7/00 ,  G03F7/20 ,  G03F1/16

Abstract: PROBLEM TO BE SOLVED: To form patterns with higher resolution and precision than the present condition by a method wherein an exposure of forming pattern images at 1/ n-fold cycle on a transfer target and an exposure of forming equi-fold pattern images of an absorber pattern not having a cyclic structure are simultaneously conducted. SOLUTION: An absorber pattern 102 is formed on a membrane as a transfer target, and a type or a thickness of an absorber and an exposure gap are set by a cycle of Fresnel diffraction images so as to become 1/2-fold a cycle of the absorber pattern 102. A mask 100 is overlaid on a wafer 300 with the exposure gap set, and X-rays 2a are irradiated, and stripe-like patterns 301 by diffraction images of a cycle 1/2-fold that of a cyclic structure part 102 are exposed on the wafer 300 by X-rays passing through a scope 102 of the cyclic structure of the mask 100. Furthermore, patterns of a non-cyclic structure part 104 are exposed as equi-fold patterns by the X-rays passing through a scope 104 having no cyclic structures of the mask 100.

公开(公告)号：JPH0612812B2

公开(公告)日：1994-02-16

申请号：JP34368089

申请日：1989-12-29

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  HIRAI YUTAKA ,  AYADA NAOKI ,  UZAWA SHUNICHI

IPC: H01L27/146

公开(公告)号：JPH0414537B2

公开(公告)日：1992-03-13

申请号：JP16015881

申请日：1981-10-09

Applicant: CANON KK

Inventor： UZAWA SHUNICHI ,  MORI TETSUZO ,  YUKIMURA NOBORU

IPC: H04B10/00 ,  H04B10/077 ,  H04B10/112 ,  H04B10/524 ,  H04B10/556 ,  H04N1/00 ,  H04N1/32

公开(公告)号：JPH03293716A

公开(公告)日：1991-12-25

申请号：JP9493790

申请日：1990-04-12

Applicant: CANON KK

Inventor： FUJIOKA HIDEHIKO ,  MIYAJI GOJI ,  CHIBA YUJI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKUO ,  UZAWA SHUNICHI ,  FUKUDA YOSHIAKI

IPC: G03F1/22 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To alleviate influence of a thermal stress with adhesive and a stress at the time of contraction and to form an X-ray mask for accurately forming parallel surfaces on a mask surface and a wafer by holding the mask between first and second bases having highly flattened surfaces, and adhering a mask board to a supporting frame while holding an interval between the bases at a predetermined value. CONSTITUTION:A mask board 2 having a surface formed with a mask pattern and including high flatness, and a supporting frame 1 for securing the board 2 through adhesive 6 are provided. The mask 2 is held between two bases 12 and 17 having highly flattened surfaces, and both are aligned before the adhesive 6 between the board 2 and the frame 1 is cured. The parallel interval of high accuracy is held until the adhesive 6 is cured in this state. Thus, an X-ray mask in which the mask surface opposed to the wafer and the mask chuck mounting surface of opposite side thereto are accurately disposed in parallel, is adhesively assembled.

公开(公告)号：JPH03273663A

公开(公告)日：1991-12-04

申请号：JP7188690

申请日：1990-03-23

Applicant: CANON KK

Inventor： MARUMO KOJI ,  IWAMOTO KAZUNORI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKUO ,  UZAWA SHUNICHI

IPC: H01L21/673 ,  G03F7/20 ,  H01L21/027 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687

Abstract: PURPOSE:To prevent the falling-off of a substrate at the time of service interruption and at the time of sensor trouble and the insufficient flatness of the substrate by providing a falling-off preventive means for obviating the falling-off of the substrate. CONSTITUTION:When a wafer 30 is extracted from a wafer carrier 20, the height of the wafer carrier 20 is adjusted so that a suction arm 13 is positioned on the side slightly lower than the wafer to be extracted 30. A wafer hand 10 is moved from the right direction to the left direction until a front end enters under the wafer 30 in the suction arm 13 under the state in which falling-off preventive arms 11, 12 are opened as shown in the figure. The suction arm 13 is elevated slightly and the wafer 30 is picked up from the wafer carrier 20, the wafer 30 is sucked and held under a vacuum, the wafer hand 10 is shifted in the right direction up to a position shown in A, and the falling-off preventive arms 11, 12 are closed.

公开(公告)号：JPH03234979A

公开(公告)日：1991-10-18

申请号：JP2849490

申请日：1990-02-09

Applicant: CANON KK

Inventor： TANAKA YUTAKA ,  OZAWA KUNITAKA ,  KARIYA TAKUO ,  UZAWA SHUNICHI

IPC: F16K3/18 ,  H01L21/027

Abstract: PURPOSE:To eliminate a generation of dust by providing a partition wall furnishing an opening, a valve main body moving along the partition wall and opening and closing the opening, a driving means, and a pressing means to squeeze the valve main body to the partition wall side and to allow to project to and retreat from the valve main body side. CONSTITUTION:When a pressured air is led in to a piping 37, a pressing rod 33 moves to the right against a spring 34 so as to occupy a position retreating from a side wall 41, and when the pressured air is led in to a piping 38, the rod 33 moves to the left to occupy a projecting position. When a wafer is processed in a precess chamber 11, a valve main body 14 is made in the closing position by a cylinder 15, and when a pressing cylinder 26 is driven to project the rod 33, the rod 33 is inserted to a recess 42 of the valve main body 14, to press and contact the valve main body 14 to the side wall 41 (partition wall), a seal member 20 seals an opening 13, and the chamber 11 and a prelimenary chamber 12 are partitioned airtight. When the opening 13 is opened, the rod 33 is moved to the retreating position by the cylinder 26, then the valve main body 14 is made in the opening position, and then, the rod 33 is projected to press the valve main body 14.

公开(公告)号：JPH03230513A

公开(公告)日：1991-10-14

申请号：JP2507190

申请日：1990-02-06

Applicant: CANON KK

Inventor： SHIMODA ISAMU ,  KARIYA TAKUO ,  MIZUSAWA NOBUTOSHI ,  OZAWA KUNITAKA ,  UZAWA SHUNICHI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/027

Abstract: PURPOSE:To obtain desired precision by measuring M/W interval matching error for each of integer times as many exposure regions as those of a first aligner at the time of exposure with a second aligner, and adjusting the equipment so as to minimize the error over the whole exposure region of the second aligner. CONSTITUTION:At the time of exposure with a second aligner, M/W interval matching error is measured for each of the same exposure regions as those of a first aligner or for each of integer times as many exposure regions as those thereof. The equipment is adjusted so as to minimize the error over the whole exposure region of the second aligner. Hence all of the semiconductor device M/W interval matching errors contained in the exposure region of the second aligner can be minimized, and the precision of M/W interval matching of each semiconductor device can be grasped. Thereby minimum line width, productivity, alignment precision, etc., can be optimized when the aligners whose exposure regions are different are used together.