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    Method of manufacturing semiconductor laser, semiconductor laser, method of manufacturing semiconductor device and semiconductor device
    121.
    发明专利
    Method of manufacturing semiconductor laser, semiconductor laser, method of manufacturing semiconductor device and semiconductor device 有权
    制造半导体激光的方法，半导体激光器，制造半导体器件和半导体器件的方法

    公开(公告)号：JP2008135792A

    公开(公告)日：2008-06-12

    申请号：JP2008047184

    申请日：2008-02-28

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： HINO TOMOKIMI ,  TOJO TAKESHI ,  IKEDA MASAO ,  OFUJI YOSHIO ,  UCHIDA SHIRO ,  TOMITANI SHIGETAKA ,  MORITA ETSUO

    IPC: H01S5/10

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser, in which the adhesiveness is improved, deterioration at the end face part is suppressed, operation current increases extremely little during energization, and the life is significantly improved, when an end face coat film is formed on an edge face of a resonator formed by processing a nitride III-V compound semiconductor. SOLUTION: In the semiconductor laser using the nitride III-V compound semiconductor, the end face coat film 20 is formed in the edge face 18 of the resonator formed by cleavage etc. via an adhesion layer. The adhesion layer is at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, or a substance containing at least one element selected from the group consisting of Al, Ti, Zr, Hf, Ta, Zn and Si, and oxygen and/or nitrogen, for example, AlO x film etc. The lowest layer of the end face coat film 20 is the Al 2 O 3 film. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：为了提供一种半导体激光器，其中粘合性提高，端面部分的劣化被抑制，通电期间的操作电流增加极小，并且当端面涂层 在通过处理氮化物III-V化合物半导体形成的谐振器的边缘面上形成膜。 解决方案：在使用氮化物III-V化合物半导体的半导体激光器中，端面涂层膜20通过粘合层由切割等形成的谐振器的边缘面18形成。 粘附层为选自Al，Ti，Zr，Hf，Ta，Zn和Si中的至少一种元素，或含有选自Al，Ti，Zr，Hf， Ta，Zn和Si，以及氧和/或氮，例如AlO SB薄膜等。端面涂层膜20的最底层是Al SB SB 3 膜。 版权所有（C）2008，JPO＆INPIT

    Semiconductor laser and optical disk apparatus
    123.
    发明专利
    Semiconductor laser and optical disk apparatus 有权
    半导体激光和光盘设备

    公开(公告)号：JP2006114811A

    公开(公告)日：2006-04-27

    申请号：JP2004302642

    申请日：2004-10-18

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： TAKEYA MOTONOBU ,  ICHINOKURA KEIJI ,  ASANO TAKEHARU ,  IKEDA MASAO ,  HASHITSU TOSHIHIRO

    IPC: H01S5/323

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser with an excellent far field pattern and excellent light-harvesting of a laser beam by suppressing production of spikes in the far field pattern in a vertical direction of an active layer.
    SOLUTION: The semiconductor laser comprises a semiconductor substrate 1 transparent to light with an oscillating wavelength λ, a background semiconductor layer 2 transparent to the light with the oscillating wavelength λ and formed on the semiconductor layer 1, a first clad layer 5 on the background semiconductor layer 2, the active layer 8 on the first clad layer 5, and a second clad layer 13 on the active layer 8. At least one semiconductor conductor layer 3 satisfying a relation of nt=(1/4)λ (wherein n is a refractive index, and t is a thickness) is provided between the first clad layer 5 and the semiconductor substrate 1.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 解决的问题：通过抑制活性层的垂直方向上的远场图案中的尖峰的产生，提供具有优异的远场图案和优异的激光束的光收获的半导体激光器。 解决方案：半导体激光器包括对具有振荡波长λ的光透明的半导体衬底1，对于具有振荡波长λ并形成在半导体层1上的光透明的背景半导体层2，形成在第一覆盖层5上的第一覆盖层5 背景半导体层2，第一覆盖层5上的有源层8和有源层8上的第二覆盖层13.至少一个满足nt =（1/4）λ的关系的半导体层3，其中 n是折射率，并且t是厚度）设置在第一覆盖层5和半导体衬底1之间。版权所有：（C）2006，JPO＆NCIPI

    METHOD FOR ACTIVATING IMPURITY IN SEMICONDUCTOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    125.
    发明专利
    METHOD FOR ACTIVATING IMPURITY IN SEMICONDUCTOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2001127002A

    公开(公告)日：2001-05-11

    申请号：JP30551999

    申请日：1999-10-27

    Applicant: SONY CORP

    Inventor： MATSUDA OSAMU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE SEIICHI

    IPC: H01L21/268 ,  H01S5/323 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To easily activate an impurity at a target of a semiconductor with a high activation rate and satisfactory uniformity. SOLUTION: At the time of activating impurity by irradiating a semiconductor, to which impurity is doped, for example, a GaN nitride 3-5 compound semiconductor to which p-type impurity such as Mg is doped, with lights, especially, laser beams. Photor energy for which the absorption coefficient of semiconductor can be set as α=1/d, where (d) is the thickness of the semiconductor whose is to be activated impurity is defined as a measured band gap Eg-real of the semiconductor, and light beams with photon energy within the range of Eg-real ±0.5 eV are used. In this case, the temperature of the substrate may be changed while the semiconductor is irradiated with the light beams. This method for activating impurity can be used for forming a p-type layer at the time of manufacturing a GaN semiconductor with laser.

    METHOD FOR GROWING III-V NITRIDE COMPOUND SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR ELEMENT
    126.
    发明专利
    METHOD FOR GROWING III-V NITRIDE COMPOUND SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR ELEMENT 失效

    公开(公告)号：JP2000164513A

    公开(公告)日：2000-06-16

    申请号：JP33640498

    申请日：1998-11-26

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  YANASHIMA KATSUNORI ,  ASAZUMA YASUNORI ,  IKEDA MASAO

    IPC: C30B29/38 ,  H01L21/205 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To realize a method for growing a III-V nitride compound semiconductor having high crystallinity by increasing nitrogen materials contributing to growth. SOLUTION: A material gas, including ammonia gas being the material of nitrogen and carrier gas, is supplied inside of a reaction tube 3. The flow of the material gas inside the reaction tube 3 is set in a direction, parallel to the growth surface of a substrate 14, and the velocity of flow of the material gas inside the reaction tube 3 is set at 2 m/s or less. Thus, ammonia can be fully heated by the delay amount of the velocity of flow, and decomposing efficiency can be improved, and the supply of the nitrogen material to the growth surface of the substrate 14 can be increased, and the evaporation of nitrogen from the III-V nitride compound semiconductor during growth can be suppressed. Also, it is desirable that the inside the reaction tube 3 be pressurized.

    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LASER AND FABRICATION THEREOF
    127.
    发明专利
    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR LASER AND FABRICATION THEREOF 失效

    公开(公告)号：JP2000040856A

    公开(公告)日：2000-02-08

    申请号：JP20845498

    申请日：1998-07-23

    Applicant: SONY CORP

    Inventor： ASANO TAKEHARU ,  ASAZUMA YASUNORI ,  HINO TOMOKIMI ,  IKEDA MASAO

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To enhance planarity of the edge of a resonator while facilitating fabrication. SOLUTION: An underlying layer 3 of GaN is formed on a sapphire substrate 1 through a buffer layer 2 before growing a coating layer 5 of GaN through a mask layer 4 having an opening 4a extended in the direction of the underlying layer 3. An n-type clad layer 7 of III nitride compound conductor, an active layer 9, and a p-type clad layer 11 are formed thereon. Direction B of a resonator is set in the direction of the underlying layer 3 and differentiated by 90 deg. from the extending direction A of mask opening and a pair of resonator edges 16, 17 are formed in the direction B of the resonator. Consequently, an emission region is not required to be aligned with the mask layer 4. Furthermore, planarity can be enhanced easily because the resonator edges 16, 17 located in the direction B of the resonator can be formed by cleavage.

    SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
    128.
    发明专利
    SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH10335750A

    公开(公告)日：1998-12-18

    申请号：JP14519997

    申请日：1997-06-03

    Applicant: SONY CORP

    Inventor： MORITA ETSUO ,  IKEDA MASAO ,  KAWAI HIROHARU

    IPC: C30B29/38 ,  H01S5/00 ,  H01S5/02 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device suitable using a semiconductor laser, which has good characteristics and has a high efficiency and a long life, by a method wherein a semiconductor substrate is formed of a III-V nitride compound semiconductor layer having a wurtzite structure crystal structure and is formed using a plane vertical to the face 0001} as its main surface. SOLUTION: An n-type GaN contact layer 2, an n-type AlGaN clad layer 3, an active layer 4 consisting of an n-type low-impurity concentration or undoped GaInN layer, for example, a p-type AlGaN layer 5 and a p-type GaN contact layer 6 are laminated in order on an undoped GaN substrate 1 using the face (M face) 01-10} as its main surface. By cleaving the substrate 1 along the face 0001}, a III-V nitride compound semiconductor layer on the substrate 1 is cleaved along that face 0001} to form a resonator end surface. As a result, this resonator end surface becomes a flat mirror surface. Thereby, the resonator end surface, which is high in reflectivity, therefore, is low in reflection loss and is optically excellent, can be obtained.

    APPARATUS FOR GROWING CRYSTAL BY MOLECULAR BEAM
    130.
    发明专利
    APPARATUS FOR GROWING CRYSTAL BY MOLECULAR BEAM 失效

    公开(公告)号：JPH07330486A

    公开(公告)日：1995-12-19

    申请号：JP14550294

    申请日：1994-06-03

    Applicant: SONY CORP

    Inventor： NAGAI MASAHARU ,  IKEDA MASAO

    IPC: C30B23/08 ,  C30B35/00 ,  H01L21/203

    Abstract: PURPOSE:To provide an apparatus for growing a crystal by molecular beams capable of effectively preventing contamination of the surface of a compd. semiconductor substrate formed with a compd. semiconductor crystal layer by the undesirable molecular beams from a molecular beam cell and growing the crystal of the compd. semiconductor in the state of maintaining the clean surface. CONSTITUTION:This apparatus for growing the crystal by molecular beams includes (a) a molecular beam source chamber 20, (b) a film forming chamber 30 and (c) a moving type shielding device 40 which partitions the molecular beam source chamber 20 and the film forming chamber 30. The moving type shielding device 40 is preferably constituted of, for example, a gate valve. Further, the molecular beam source chamber 20 and the film forming chamber 30 are respectively preferably provided with vacuum pumps.

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