公开(公告)号：EP1892741A4

公开(公告)日：2010-05-26

申请号：EP06766923

申请日：2006-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NISHIBAYASHI YOSHIKI ,  UEDA AKIHIKO ,  YAMAMOTO YOSHIYUKI ,  IMAI TAKAHIRO

IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC classification number: H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

公开(公告)号：EP1667188A4

公开(公告)日：2008-09-10

申请号：EP04773356

申请日：2004-09-15

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TATSUMI NATSUO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/304 ,  H01J1/308

CPC classification number: H01J1/304 ,  H01J1/308 ,  H01J2237/06325 ,  H01J2237/3175

Abstract: Disclosed is an electron emitter which is smaller in size, lower in operating voltage, and high in efficiency than the conventional ones. Also disclosed is an electron beam source using such an electron emitter. The electron emitter comprises a light-emitting element for irradiating a cathode with light, and at least electron-emitting surface of the cathode is composed of diamond. By having such a structure, the voltage for extracting electrons can be greatly lowered in this electron emitter than the conventional ones. Namely, there is obtained a small-sized electron emitter which can be operated at low voltage. The above-mentioned light-emitting element is preferably formed integrally with the cathode. The light-emitting element and the electrode are preferably composed of diamond. Further, it is desirable that the electron-emitting surface of the cathode is composed of an n-type or p-type diamond semiconductor.

公开(公告)号：EP1536043A4

公开(公告)日：2008-04-30

申请号：EP03733484

申请日：2003-06-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NAMBA AKIHIKO ,  IMAI TAKAHIRO ,  NISHIBAYASHI YOSHIKI

IPC: C30B25/02 ,  C30B29/04 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/44

CPC classification number: C30B25/02 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02494 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/041 ,  H01L29/66022 ,  H01L29/66037

Abstract: An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline ä100ü diamond substrate 10 so as to form a ä111ü plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond ä111ü plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline ä100ü diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

公开(公告)号：EP2108714A4

公开(公告)日：2010-11-24

申请号：EP07707612

申请日：2007-01-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： UEDA AKIHIKO ,  MEGURO KIICHI ,  YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: C23C16/511 ,  C30B29/04 ,  H01L21/205

CPC classification number: C30B25/105 ,  C23C16/24 ,  C23C16/511 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/32238

公开(公告)号：EP1892742A4

公开(公告)日：2010-06-09

申请号：EP06766924

申请日：2006-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  UEDA AKIHIKO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/15 ,  H01J37/06 ,  H01J37/305

CPC classification number: H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

公开(公告)号：EP1930932A4

公开(公告)日：2009-09-02

申请号：EP06798197

申请日：2006-09-21

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： YAMAMOTO YOSHIYUKI ,  TATSUMI NATSUO ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J1/3044 ,  H01J9/025

Abstract: An electron emission element (2) includes an electron emission unit (6) made of diamond. When an electron emission current value is equal to or above 10 µA in the electron emission element (2), a deviation of the electron emission current value for one hour is within ± 20%. Moreover, the number of generations of a stepwise noise in which the electron emission current value changes stepwise is once or below per 10 minutes.

公开(公告)号：EP1947487A4

公开(公告)日：2008-11-19

申请号：EP06822083

申请日：2006-10-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ODA KAZUHIKO ,  MATSUURA TAKASHI ,  AKAHANE YOSHIHIRO ,  USHIRO TOSHIHIKO ,  IMAI TAKAHIRO

IPC: G02B5/18

CPC classification number: G02B6/122 ,  G02B1/105 ,  G02B1/14 ,  Y10T428/265

Abstract: Disclosed is an optical thin film wherein a hydrogenated carbon film mainly containing at least carbon and hydrogen is formed on a substrate and at least one protective layer composed of any one of an oxide film, a nitride film, an oxynitride film, a fluoride film and a film mainly containing hydrogen and carbon is formed on the hydrogenated carbon film.

公开(公告)号：EP1630257A4

公开(公告)日：2006-12-13

申请号：EP04734725

申请日：2004-05-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： SEKI YUICHIRO ,  IZUMI KENJI ,  IMAI TAKAHIRO

IPC: C02F1/461 ,  C25B11/04

CPC classification number: C02F1/46109 ,  C02F2001/46133 ,  C02F2001/46138 ,  C25B11/0442 ,  Y10T428/30

Abstract: A diamond electrode having a sufficiently low resistance is disclosed which is realized by increasing the amount of boron added thereto. A method for producing a high-performance, high-durability electrode is also disclosed by which adhesiveness between a diamond coating and a substrate and separation resistance during electrolysis are sufficiently increased. An electrode composed of a substrate and a diamond layer coating the substrate is characterized in that the electrode is composed of a base coated with diamond and the diamond contains boron in such an amount that the boron concentration is not less than 10,000 ppm but not more than 100,000 ppm. The base is preferably made of an insulating material.

Abstract translation: 公开了具有足够低电阻的金刚石电极，其通过增加添加到其中的硼的量来实现。 还公开了一种用于生产高性能，高耐久性电极的方法，其中金刚石涂层与基底之间的粘附性和电解过程中的分离阻力充分增加。 由基体和覆盖基体的金刚石层构成的电极的特征在于，电极由涂覆有金刚石的基体构成，并且金刚石含有的硼的量使得硼浓度不小于10,000ppm但不大于 100,000ppm。 基座优选由绝缘材料制成。

公开(公告)号：EP2065915A4

公开(公告)日：2010-03-10

申请号：EP07807459

申请日：2007-09-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： UEDA AKIHIKO ,  YAMAMOTO YOSHIYUKI ,  NISHIBAYASHI YOSHIKI ,  IMAI TAKAHIRO

IPC: H01J9/02 ,  H01J1/304 ,  H01J37/065 ,  H01J37/073

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

公开(公告)号：EP1746622A4

公开(公告)日：2010-01-06

申请号：EP05727126

申请日：2005-03-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： NISHIBAYASHI YOSHIKI ,  MIYAZAKI TOMIHITO ,  HATTORI TETSUYA ,  IMAI TAKAHIRO

IPC: H01J9/02 ,  H01L21/28 ,  B81C1/00 ,  B82B3/00 ,  H01J1/304

CPC classification number: B81C1/00111 ,  H01J9/025 ,  H01J2329/0415 ,  H01J2329/0447 ,  Y10T428/26