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    HIGH ASPECT RATIO DENSE PATTERN-PROGRAMMABLE NANOSTRUCTURES UTILIZING METAL ASSISTED CHEMICAL ETCHING
    123.
    发明申请
    HIGH ASPECT RATIO DENSE PATTERN-PROGRAMMABLE NANOSTRUCTURES UTILIZING METAL ASSISTED CHEMICAL ETCHING 审中-公开
    使用金属辅助化学蚀刻的高比例渗透模式可编程纳米结构

    公开(公告)号：WO2014152435A1

    公开(公告)日：2014-09-25

    申请号：PCT/US2014/027338

    申请日：2014-03-14

    Applicant: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

    Inventor： SAKDINAWAT, Anne, Eugenie ,  CHANG, Chieh

    IPC: C23F1/00 ,  C23F1/44

    CPC classification number: C23F1/02 ,  B81B2201/047 ,  B81C1/00619 ,  B81C2201/0133 ,  G02B5/1838 ,  G02B5/1857 ,  G03F7/0005 ,  G21K1/06 ,  G21K2201/067

    Abstract: A method of ultra-high aspect ratio high resolution vertical directionality controlled metal- assisted chemical etching, V-MACE, is provided that includes forming a pattern on a substrate surface, using a lithographic or non-lithographic process, forming hole concentration balancing structures on the substrate, using a lithographic process or non- lithographic process, where the concentration balancing structures are proximal to the pattern, forming mechanical anchors internal or external to the patterned structures, forming pathways for etchant and byproducts to diffuse, and etching vertical features from the substrate surface into the substrate, using metal-assisted chemical etching, MACE, where the vertical features are confined to a vertical direction by the concentration balancing structures.

    Abstract translation: 提供了一种超高纵横比高分辨率垂直方向性控制的金属辅助化学蚀刻V-MACE的方法，其包括使用光刻或非平版印刷工艺在基板表面上形成图案，形成孔浓度平衡结构 基板，其使用光刻工艺或非平版印刷工艺，其中浓度平衡结构靠近图案，在图案化结构的内部或外部形成机械锚，形成用于蚀刻剂和副产物扩散的途径，并从垂直特征 衬底表面进入衬底，使用金属辅助化学蚀刻MACE，其中垂直特征通过浓度平衡结构限制在垂直方向。

    멤스 디바이스 제조방법
    124.
    发明申请
    멤스 디바이스 제조방법 审中-公开
    MEMS器件制造方法

    公开(公告)号：WO2014119810A1

    公开(公告)日：2014-08-07

    申请号：PCT/KR2013/000832

    申请日：2013-02-01

    Applicant: 한국과학기술원

    Inventor： 임성규 ,  김영수 ,  김희연 ,  강민호 ,  오재섭 ,  이귀로

    IPC: B81B1/00

    CPC classification number: B81C1/00595 ,  B81B2203/0109 ,  B81C2201/0109 ,  B81C2201/0133

    Abstract: 비정질 탄소막을 희생층으로 이용한 MEMS 디바이스 제조 방법이 제공된다. 본 발명의 일 실시예에 따르면, 하부 구조물을 형성한다. 상기 하부 구조물 상에 희생층으로서 비정질 탄소막을 형성한다. 상기 비정질 탄소막 상에 센서 구조를 포함하는 상부 구조물을 형성한다. 상기 하부 구조물과 상기 상부 구조물이 서로 이격되어 배치되도록 상기 비정질 탄소막을 제거한다.

    Abstract translation: 提供了使用非晶碳膜作为牺牲层的MEMS器件制造方法。 根据本发明的实施例，形成下部结构。 在下部结构上形成无定形碳膜作为牺牲层。 在非晶碳膜上形成包括传感器结构的上部结构。 去除非晶碳膜，使得下部结构和上部结构彼此间隔开。

    METHOD OF PRODUCING MICRONEEDLES
    125.
    发明申请
    METHOD OF PRODUCING MICRONEEDLES 审中-公开
    微胶囊的生产方法

    公开(公告)号：WO2011015650A2

    公开(公告)日：2011-02-10

    申请号：PCT/EP2010/061477

    申请日：2010-08-06

    Applicant: O'MAHONY, Conor ,  O'BRIEN, Joseph ,  BLAKE, Alan ,  WEBSTER, Carlo ,  UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK

    Inventor： O'MAHONY, Conor ,  O'BRIEN, Joseph ,  BLAKE, Alan ,  WEBSTER, Carlo

    IPC: B81C1/00

    CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/0053 ,  B81B2201/055 ,  B81B2203/0384 ,  B81C2201/0133

    Abstract: A method of forming a microneedle device comprises the steps of coating the front and back surfaces of a substrate with a protective masking material, patterning the protective masking material to form a protective mask on the front surface of the substrate and an opening in the protective masking material on the back surface of the substrate, and simultaneously wet-etching both front and back surfaces of the substrate to provide a generally conical microneedle on the front surface of the substrate and a generally conical pit on the back surface of the substrate. The dimensions and location of the protective mask and opening are chosen so that the pyramidal pit extends from the back surface to intersect the front surface of the substrate, generally on, or adjacent to, a surface of the conical microneedle. Thus, a through-hole is formed in the substrate providing fluid communication from a rear of the substrate to a location on the front surface of the substrate, either on the microneedle surface or adjacent to a base of the microneedle.

    Abstract translation: 一种形成微针装置的方法包括以下步骤：用保护性掩膜材料涂覆衬底的前表面和后表面，图案化保护性掩膜材料以在所述衬底的前表面上形成保护性掩膜 衬底和在衬底背面上的保护性掩模材料中的开口，同时湿法蚀刻衬底的前后表面以在衬底的前表面上提供大致圆锥形的微针，并且在衬底的前表面上提供大致圆锥形的凹坑 衬底的背面。 选择防护掩模和开口的尺寸和位置，使得金字塔形凹坑从后表面延伸以与基底的前表面相交，大体在圆锥形微针的表面上或与圆锥形微针的表面相邻。 因此，在基底中形成通孔，该通孔提供从基底后部到基底前表面上的位置的微通道表面上或邻近微针基部的流体连通。

    ACCELEROMETER STRAIN RELIEF STRUCTURE
    128.
    发明申请
    ACCELEROMETER STRAIN RELIEF STRUCTURE 审中-公开
    加速度计应变消除结构

    公开(公告)号：WO2002093180A1

    公开(公告)日：2002-11-21

    申请号：PCT/US2002/010578

    申请日：2002-04-05

    Applicant: HONEYWELL INTERNATIONAL INC.

    Inventor： MALAMETZ, David

    IPC: G01P15/08

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C2201/0133 ,  G01P1/006 ,  G01P15/097

    Abstract: An apparatus and method for suspending and strain isolating a structure is provided, the apparatus having a first elongated flexure having first and second ends structured for connection to a support structure, and a second elongated flexure having first and second ends structured for connection to a structure to be isolated from the support structure. A portion of the second flexure intermediate the first and second ends thereof is interconnected to a portion of the first flexure intermediate the first and second ends thereof. The strain relief structure may be used in an accelerometer. The structure may have a H or X form, where the legs represent the elongated flexures.

    Abstract translation: 提供了一种用于悬挂和应变隔离结构的装置和方法，该装置具有第一细长弯曲部，其具有构造成用于连接到支撑结构的第一和第二端部，以及具有第一和第二端部的结构，用于连接到结构 与支撑结构隔离。 在其第一和第二端的中间的第二挠曲部分的一部分与其第一和第二端的中间的第一挠曲部分相互连接。 应变消除结构可以用在加速度计中。 该结构可以具有H或X形式，其中腿表示细长的弯曲。

    METHOD FOR MANUFACTURING A SILICON SENSOR AND A SILICON SENSOR
    129.
    发明申请
    METHOD FOR MANUFACTURING A SILICON SENSOR AND A SILICON SENSOR 审中-公开
    制造硅传感器和硅传感器的方法

    公开(公告)号：WO2002082100A1

    公开(公告)日：2002-10-17

    申请号：PCT/FI2002/000241

    申请日：2002-03-21

    Applicant: VTI HAMLIN OY ,  KUISMA, Heikki ,  LAHDENPERÄ, Juha ,  MUTIKAINEN, Risto

    Inventor： KUISMA, Heikki ,  LAHDENPERÄ, Juha ,  MUTIKAINEN, Risto

    IPC: G01P15/00

    CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P2015/0817

    Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

    Abstract translation: 本发明涉及一种硅传感器结构和硅传感器的制造方法。 根据该方法，通过蚀刻开口形成单晶硅晶片（10），至少一个弹簧元件构造（7）和连接到所述弹簧元件构型（7）的至少一个地震块（8）。 根据本发明，通过干蚀刻方法制造延伸穿过硅晶片深度的开口和沟槽（8），并且用于控制弹簧元件构型（7）的弹簧常数的蚀刻工艺基于湿蚀刻 方法。

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