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    MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER
    122.
    发明公开
    MEMS ACOUSTIC TRANSDUCER WITH SILICON NITRIDE BACKPLATE AND SILICON SACRIFICIAL LAYER 审中-公开
    AKUSTISCHER MEMS-WANDLER MITSILICIUMNITRIDRÜCKPLATTEUND SILICIUMOPFERSCHICHT

    公开(公告)号：EP2969911A4

    公开(公告)日：2016-11-02

    申请号：EP14775941

    申请日：2014-03-12

    Applicant: BOSCH GMBH ROBERT

    Inventor： FEYH ANDO ,  GRAHAM ANDREW

    IPC: H04R19/04 ,  B81B7/02 ,  B81C1/00 ,  H04R31/00

    CPC classification number: H04R19/04 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2203/0714 ,  H04R19/005 ,  H04R31/00

    Abstract: A microelectromechanical system (MEMS) microphone has a substrate including a backside trench, and a flexible membrane deposited on the substrate extending over the backside trench. The flexible membrane includes a first electrode. A silicon spacer layer is deposited on a perimeter portion of the flexible membrane. The spacer layer defines an acoustic chamber above the membrane and the backside trench. A silicon rich silicon nitride (SiN) backplate layer is deposited on top of the silicon spacer layer extending over the acoustic chamber. The backplate defines a plurality of opening into the acoustic chamber and includes a metallization that serves as a second electrode.

    Abstract translation: 微机电系统（MEMS）麦克风具有包括背面沟槽的衬底和沉积在衬底上的柔性膜，该衬底延伸在背面沟槽上。 柔性膜包括第一电极。 硅间隔层沉积在柔性膜的周边部分上。 间隔层限定了膜上方的声室和背面沟槽。 富硅氮化物（SiN）背板层沉积在在隔音室上延伸的硅间隔层的顶部上。 背板限定了进入声室的多个开口，并且包括用作第二电极的金属化。

    MIKROELEKTRONISCHES BAUELEMENT
    123.
    发明公开
    MIKROELEKTRONISCHES BAUELEMENT 审中-公开
    MICRO电子元件

    公开(公告)号：EP2558406A2

    公开(公告)日：2013-02-20

    申请号：EP11709422.7

    申请日：2011-03-22

    Applicant: IHP GmbH-Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik

    Inventor： KAYNAK, Mehmet ,  TILLACK, Bernd ,  SCHOLZ, René

    IPC: B81C1/00

    CPC classification number: B81C1/00587 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/014

    Abstract: In a method for producing an MEMS component, wherein, in the course of producing the multilevel interconnect layer stack for connecting microelectronic circuits, micromechanical structure elements (7, 8, 9) that are to be exposed later are embedded at the same time, a cutout is subsequently produced from a substrate rear side (R) as far as the multilevel interconnect layer stack, and then the micromechanical structure elements in the multilevel interconnect layer stack are exposed through the cutout. In order to increase the process accuracy, as early as in the course of producing the multilevel interconnect layer stack or even in the front end of line, a reference mask (22) for defining a lateral position or a lateral extent of the micromechanical structure elements (7, 8, 9) to be exposed is produced, wherein the reference mask (22) is arranged on the substrate front side between the substrate and the multilevel interconnect layer stack or in a layer of the multilevel interconnect layer stack that is situated nearer to the substrate (1) in comparison with the structure element.

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