公开(公告)号：DE102008049535A1

公开(公告)日：2010-04-08

申请号：DE102008049535

申请日：2008-09-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BOGNER GEORG ,  HERRMANN SIEGFRIED ,  HAHN BERTHOLD

IPC: H01L33/00

Abstract: An LED module includes a layer stack of a substrateless LED, an emission area of the layer stack, the emission area being provided for light emission, a substrate having a top side on which the substrateless LED is arranged, contact areas arranged at a side area of the substrate, wherein the side area is perpendicular to the emission area, and/or including a base body which has contact areas at a side area and on which the substrate is mounted in such a way that the side area is perpendicular to the emission area, a first connection line between the LED and one of the contact area, and a second connection line between the LED and another of the contact areas.

公开(公告)号：DE102008046762A1

公开(公告)日：2010-03-18

申请号：DE102008046762

申请日：2008-09-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GROETSCH STEFAN ,  GUENTHER EWALD KARL MICHAEL ,  WILM ALEXANDER ,  HERRMANN SIEGFRIED

IPC: G02B27/18 ,  G03B21/00 ,  H01L25/075

Abstract: An LED projector includes a plurality of light sources; and an image generator which includes an arrangement of pixels, each pixel including at least one light source; wherein the LEDs are stacked epi-LEDs which include layers arranged above one another for different colors, or each pixel includes an emission surface and at least two LEDs are arranged adjacent one another in the emission surface.

公开(公告)号：DE102008045653A1

公开(公告)日：2010-03-04

申请号：DE102008045653

申请日：2008-09-03

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GUENTHER EWALD KARL MICHAEL ,  ZEHNDER ULRICH ,  HERRMANN SIEGFRIED ,  BRUNNER HERBERT

IPC: H01L23/38 ,  H01L31/024 ,  H01L33/00

Abstract: An optoelectronic component includes a carrier with a mounting side and having at least one functional element, at least one substrateless optoelectronic semiconductor chip with a top and an opposed bottom and is electrically conductive by way of the top and the bottom, wherein the bottom faces the mounting side and the semiconductor chip is mounted on the mounting side, and at least one structured electrical contact film located on the top.

公开(公告)号：DE102008030821A1

公开(公告)日：2009-12-31

申请号：DE102008030821

申请日：2008-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H05B33/06 ,  H05B33/10

Abstract: An electroluminescent device includes an inorganic luminescence diode chip having a radiation exit area, a plurality of contact webs provided to spread current and arranged on the radiation exit area, and a contact structure arranged outside the radiation exit area and electrically conductively connected to contact webs.

公开(公告)号：DE102008030815A1

公开(公告)日：2009-12-31

申请号：DE102008030815

申请日：2008-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H01L21/78 ,  H01L21/98 ,  H05B33/10

Abstract: A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar filling structure on the first main area such that the planar filling structure at least partly covers regions of the contact structure and the semiconductor body carrier without covering the semiconductor body.

公开(公告)号：DE102008014094A1

公开(公告)日：2009-09-17

申请号：DE102008014094

申请日：2008-03-13

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H01L25/075 ,  H01L33/22 ,  H01L33/60

Abstract: The device (1) has a stack of semiconductor layer sequences (2) including an active zone (21) for producing electromagnetic radiation. Frame like contacts (4) are provided between the semiconductor layer sequences and are electrically and mechanically connect the layer sequences. The contacts are congruently arranged above each other. A frame section of the contacts includes a breadth of about 10 micrometers to 30 micrometers in a region. Gaps are provided in the contacts. A current spreading layer adjoins at the sequences. An independent claim is also included for a method for manufacturing a radiation emitting device.

公开(公告)号：DE102008005935A1

公开(公告)日：2009-06-04

申请号：DE102008005935

申请日：2008-01-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H01L25/075 ,  F21K99/00 ,  H01L21/60 ,  H01L23/48 ,  H01L33/00 ,  H01L33/62

公开(公告)号：DE102007040874A1

公开(公告)日：2009-03-05

申请号：DE102007040874

申请日：2007-08-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H01L23/38 ,  H01L33/64

Abstract: The light-emitting semiconductor component (1) has a substrateless light emitting diode semiconductor chip (2). Two connections are provided for the contacting of the semiconductor chip. A cooling arrangement (3) is arranged under the semiconductor chip with a metal layer (4), which forms an electrical connection of the cooling arrangement. A highly doped semiconductor layer (5) is provided, which is a silicon layer. A contact layer, particularly a gold layer (11) is arranged between the metal layer and the substrateless light emitting diode chip.

公开(公告)号：DE102007021009A1

公开(公告)日：2008-04-10

申请号：DE102007021009

申请日：2007-05-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： GRUBER STEFAN ,  HAHN BERTHOLD ,  HERRMANN SIEGFRIED ,  SORG JOERG ERICH

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

公开(公告)号：DE102007004301A1

公开(公告)日：2008-02-07

申请号：DE102007004301

申请日：2007-01-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HERRMANN SIEGFRIED

IPC: H01L21/60 ,  H01L23/482 ,  H01L33/00

Abstract: The method involves forming a semiconductor material containing a layer sequence (5) on a growth substrate (1). The layer sequence is applied on a carrier layer (2), and an electrical connection area (4) is arranged on a side facing the carrier layer. Another electrical connection area is arranged on a radiation decoupling surface of the layer sequence facing the carrier layer. The connection area is electrically connected with a decouple-sided conductive strip. Independent claims are also included for the following: (1) a thin film semiconductor component (2) an element group.