Abstract:
PROBLEM TO BE SOLVED: To provide a photoelectric element by a thin film technique and/or a flip-chip technology, having high reliability, and improved in the metallization of a support body, in particular. SOLUTION: In a photoelectric element, having a semiconductor base material including a substrate and a layer system deposited on the substrate, the semiconductor base material, is fixed on the support body by a soldered connection part, with a main surface opposed to the substrate, and in a form of a support body having a metallization part on a surface facing toward the semiconductor base material, a metallization part does not contain silver. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
An optoelectronic semiconductor component comprises a first functional region (1) having an active zone provided for generating radiation or for receiving radiation, and a second functional region (2), which is suitable for contributing to the driving of the first functional region (1), wherein the first functional region (1) and the second functional region (2) are integrated on the same carrier substrate (3).
Abstract:
The invention relates to a radiation-emitting semiconductor component with a luminescence conversion element (8). A reflector (7) is connected downstream of a semiconductor body (3), this reflector being coated with a luminescence conversion element (8) or containing a luminescence conversion element (8). Said luminescence conversion element (8) converts part of the radiation (6) that is emitted by the semiconductor body during operation in a first wavelength range into radiation (9) in a second wavelength range. The semiconductor body (3) and the luminescence conversion element (8) are preferably tuned to each other in such a way that mixed-colour white light is emitted.
Abstract:
The invention relates to a light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102) - opposite the front side - on a first main area (201) of a common carrier (2), wherein the semiconductor chips are composed of a respective substrateless semiconductor layer stack (1) and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.
Abstract:
The invention concerns a stripe laser diode element exhibiting longitudinal direction of propagation in the main direction of propagation of a laser light and having contacts in longitudinal direction of propagation on one surface with the purpose of impressing a current on the element. The surface in defined by edges crosswise to the longitudinal direction. An absorption region is formed in the area of said edges.
Abstract:
Es wird unter anderem angegeben ein Beleuchtungssystem (1) mit- mehreren einzeln ansteuerbaren Lichtquellen (2) oder einzeln ansteuerbaren Gruppen von Lichtquellen (2),- mindestens einer Ansteuereinheit (3) zum Ansteuern der Lichtquellen (2),- einer Freigabeeinheit (4), und- mindestens einer Speichereinheit (51), wobei die Freigabeeinheit (4) dazu eingerichtet ist, bestimmte Lichtfunktionen oder Ansteuermodi für die Lichtquellen (2) erst nach Eingabe eines Freigabecodes freizugeben.
Abstract:
According to at least one embodiment of the semiconductor arrangement, the latter comprises a mounting side, at least one optoelectronic semiconductor chip with mutually opposing chip top and bottom, and at least one at least partially radiation-transmissive body with a body bottom, on which the semiconductor chip is mounted such that the chip top faces the body bottom. Moreover, the semiconductor arrangement comprises at least two electrical connection points for electrical contacting of the optoelectronic semiconductor chip, wherein the connection points do not project laterally beyond the body and with their side remote from the semiconductor chip delimit the semiconductor arrangement on the mounting side thereof.
Abstract:
The optoelectronic component comprises a transparent sender and/or receiver encapsulating element (3) which is provided with a transparent cover layer (4) whose refraction index lies between the refraction indices of the surrounding medium (6) and the encapsulating element.
Abstract:
The invention relates to an arrangement comprising a semiconductor chip (1) which is designed to emit light during operation as well as a cover layer (2) that lies across from a light-emitting surface of the semiconductor chip (1) such that light emitted by the semiconductor chip (1) penetrates into the cover layer (2). According to the invention, said arrangement is characterized in that a light-deflecting structure is provided in an area of the cover layer (2) that overlaps the chip (1). Said light-deflecting structure deflects the light that penetrates into the cover layer (2) in the direction of the longitudinal extension of the cover layer (2). Furthermore, the coating (2) acts as an optical waveguide and is designed to emit the light in a distributed manner across the top surface of the cover layer (2).
Abstract:
A plastic housing (2) is disposed on a support element (1) and comprises a recess (3) in which an optoelectronic component (12) is arranged. The recess (3) has an opening to the exterior (9) on the side facing away from the support element (1), which can be provided with a transparent cover. One or several structures (5, 6) can be provided at the plastic housing (2) in order to align the cover and/or the optical components relative to the optoelectronic component.