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1.发明专利Beam emitting and/or beam receiving semiconductor element, and method of structuring contact and depositing same on semiconductor substrate 审中-公开光束发射和/或光束接收半导体元件，以及在半导体基板上结构化接触和沉积的方法
公开(公告)号：JP2005322919A
公开(公告)日：2005-11-17
申请号：JP2005134453
申请日：2005-05-02
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： JONDA CHRISTOPH , ZEHNDER ULRICH , STRAUS UWE
IPC: H01L31/10 , H01L31/0216 , H01L31/0224 , H01L33/38 , H01L33/44 , H01S5/028 , H01S5/343
CPC classification number: H01L33/44 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To improve a beam radiating and/or a beam receiving semiconductor element, and to provide an simple method of depositing contacts on a semiconductor substrate. SOLUTION: In the beam radiating and/or the beam receiving semiconductor element, including the semiconductor substrate (1) having an active zone (2) provided to form or receive the beam and a main surface in the main extending direction in the lateral direction, a protective layer (6) disposed on the main surface side, and the contact (5) disposed on the main surface side, the protective layer (5) is positioned so as to be at an interval from the contact (5) in the lateral direction. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：为了改善光束辐射和/或光束接收半导体元件，并提供在半导体衬底上沉积触点的简单方法。 解决方案：在辐射和/或束接收半导体元件的光束接收半导体元件中，包括具有用于形成或接收光束的激活区域（2）的半导体衬底（1）和在主延伸方向上的主表面 横向方向，设置在主表面侧的保护层（6）和设置在主表面侧的触点（5），保护层（5）定位成与触点（5）间隔开， 在横向上。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2007073998A
公开(公告)日：2007-03-22
申请号：JP2006337515
申请日：2006-12-14
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER DR , JACOB ULRICH , PLASS WERNER , STRAUS UWE , VOELKL JOHANNES , ZEHNDER ULRICH
CPC classification number: H01L33/20 , H01L33/24 , H01L2224/48091 , H01L2924/00014
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip suitable for high radiation output so that output efficiency of radiation generated in the semiconductor chip is improved.
SOLUTION: At least one vertical surface of a semiconductor chip, which is used as an output surface, is longer than a lateral surface in an extending direction of an active zone.
COPYRIGHT: (C)2007,JPO&INPITAbstract translation: 要解决的问题：提供适合于高辐射输出的半导体芯片，从而提高在半导体芯片中产生的辐射的输出效率。 解决方案：用作输出表面的半导体芯片的至少一个垂直表面比活动区域的延伸方向上的侧表面长。 版权所有（C）2007，JPO＆INPIT
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3.发明专利Method of manufacturing optical semiconductor device, and optical semiconductor device 有权制造光学半导体器件的方法和光学半导体器件
公开(公告)号：JP2011035433A
公开(公告)日：2011-02-17
申请号：JP2010256649
申请日：2010-11-17
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JURGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor device capable of improving quantum efficiency. SOLUTION: An indium content of at least one well layer is increased in a step of growing the well layer. In the optical semiconductor device, the well layer has a first composition based on a nitride semiconductor material with first electron energy, and a barrier layer has a second composition based on the nitride semiconductor material with second electron energy higher than the first electron energy. A beam activated quantum well layer is grown on the barrier layer. Non-radiative well layers and the barrier layers form a superlattice for the beam activated quantum well layer. The layer thickness of the beam activated quantum well layer is larger than the layer thickness of the well layer of the superlattice. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种能够提高量子效率的制造光半导体器件的方法。 解决方案：在生长阱层的步骤中增加至少一个阱层的铟含量。 在光半导体器件中，阱层具有基于具有第一电子能的氮化物半导体材料的第一组成，并且阻挡层具有基于具有高于第一电子能的第二电子能的氮化物半导体材料的第二组成。 光束激发量子阱层生长在阻挡层上。 非辐射阱层和阻挡层形成用于束激活量子阱层的超晶格。 束活化量子阱层的层厚度大于超晶格阱层的层厚度。 版权所有（C）2011，JPO＆INPIT
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4.发明专利Optoelectronic device with multiple current diffused layers, and manufacturing method therefor 有权具有多个电流扩散层的光电器件及其制造方法
公开(公告)号：JP2005322913A
公开(公告)日：2005-11-17
申请号：JP2005133568
申请日：2005-04-28
Applicant: Osram Opto Semiconductors Gmbh , オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH
Inventor： EBERHARD FRANZ , STRAUS UWE , ZEHNDER ULRICH , WEIMAR ANDREAS , OBERSCHMID RAIMUND
CPC classification number: H01L33/40 , H01L33/32 , H01L33/38 , Y10S438/947
Abstract: PROBLEM TO BE SOLVED: To provide an optoelectronic device having lateral distribution for uniform current density and high ESD stability. SOLUTION: In this optoelectronic device, a first current diffusion layer and a second current diffusion layer, which interface with the semiconductor layer of a semiconductor layer array, are positioned between the semiconductor layer array and its connection contacts; the first current diffused layer has layer resistance larger than the second one and forms an ohmic contact with an adjacent semiconductor layer; and the second current diffused layer is positioned at a partial domain with a side clearance of the first current diffused layer. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供具有均匀电流密度和高ESD稳定性的横向分布的光电子器件。 解决方案：在该光电子器件中，与半导体层阵列的半导体层接合的第一电流扩散层和第二电流扩散层位于半导体层阵列及其连接触点之间; 第一电流扩散层具有比第二电流扩散层更大的层电阻，并与相邻的半导体层形成欧姆接触; 并且第二电流扩散层位于具有第一电流扩散层的侧面间隙的部分域处。 版权所有（C）2006，JPO＆NCIPI
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5.发明申请
公开(公告)号：WO02052615A3
公开(公告)日：2002-12-19
申请号：PCT/DE0104880
申请日：2001-12-21
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , BRAUNE BERT , GRUBER STEFAN , WAITL GUENTER , ZEHNDER ULRICH
Inventor： BRAUNE BERT , GRUBER STEFAN , WAITL GUENTER , ZEHNDER ULRICH
CPC classification number: H01L33/507 , H01L24/32 , H01L33/405 , H01L33/486 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
Abstract: The invention relates to a radiation-emitting semiconductor component with a luminescence conversion element (8). A reflector (7) is connected downstream of a semiconductor body (3), this reflector being coated with a luminescence conversion element (8) or containing a luminescence conversion element (8). Said luminescence conversion element (8) converts part of the radiation (6) that is emitted by the semiconductor body during operation in a first wavelength range into radiation (9) in a second wavelength range. The semiconductor body (3) and the luminescence conversion element (8) are preferably tuned to each other in such a way that mixed-colour white light is emitted.
Abstract translation: 本发明涉及一种具有发射辐射的半导体元件的发光转换元件（8）。 在这种情况下，反射器（7）的半导体主体（3），其下游设置涂有发光转换元件（8）或包含发光转换元件（8）。 发光转换元件（8）转换的操作中的半导体主体（3）的生成（6）在第一波长范围中的第二波长范围左右（9）的一部分辐射转换成辐射。 优选地，半导体主体（3）和发光转换元件（8）匹配，使得混合色的白色发光。
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Patent Agency Ranking
公开(公告)号：DE50214662D1
公开(公告)日：2010-10-28
申请号：DE50214662
申请日：2002-09-27
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： FEHRER MICHAEL , HAERLE VOLKER , KUEHN FRANK , ZEHNDER ULRICH
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公开(公告)号：DE10054966A1
公开(公告)日：2002-05-16
申请号：DE10054966
申请日：2000-11-06
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： STRAUS UWE , OBERSCHMID REIMUND , HAERLE VOLKER , BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , JACOB ULRICH , PLASS WERNER , VOELKL JOHANNES , ZEHNDER ULRICH
Abstract: A light-emitting chip (3) comprises a lens-shaped output window (4), the base surface (5) of which is provided with a mirror surface (6). A sequence of layers (9) is arranged on an output surface (7) of the output window (4) with a photon-emitting p-n junction (10). The photons emitted by the p-n junction are reflected at the mirror surface (6) and can leave the output window (4) through the output surface (7).
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公开(公告)号：CA2360502A1
公开(公告)日：2001-05-31
申请号：CA2360502
申请日：2000-11-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： HAHN BERTHOLD , EISERT DOMINIK , BADER STEFAN , BOLAY HELMUT , ZEHNDER ULRICH , LELL ALFRED , STRAUSS UWE , LUGAUER HANS-JURGEN , WEIMAR ANDREAS , HARLE VOLKER , VOLKL JOHANNES
Abstract: The invention relates to an optical semiconductor device comprising a multip le quantum well structure, in which well layers and barrier layers consisting o f different types of semiconductor layers are stacked alternately on top of on e another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation t o the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together wit h the barrier layers (6b) form a superlattice for said active quantum well lay er.
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9.发明申请
公开(公告)号：WO0139282A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004089
申请日：2000-11-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
Inventor： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
CPC classification number: H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
Abstract: The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
Abstract translation: 具有多量子阱结构的光学半导体器件堆叠在阱层和不同类型的半导体层的势垒层交替层叠，所述阱层（6A）的基础上，具有第一电子能量和势垒层的氮化物半导体材料的第一组合物（6b）中的一个 的氮化物半导体材料的第二组合物被提供相对于所述第一电子能量更高的电子能量，其中一个辐射量子阱有源层（图6c）的下游布置为在生长的方向，为此，上游基本上无辐射阱层（6a）和阻挡层（6b）的形成的超晶格看到 ，
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公开(公告)号：DE50115638D1
公开(公告)日：2010-11-04
申请号：DE50115638
申请日：2001-07-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： BAUR JOHANNES , EISERT DOMINIK , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER , JACOB ULRICH , PLASS WERNER , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH
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