中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

584 records (took 0.026 seconds)

    ELECTRONIC SYSTEMS WITH THROUGH-SUBSTRATE INTERCONNECTS AND MEMS DEVICE
    132.
    发明申请
    ELECTRONIC SYSTEMS WITH THROUGH-SUBSTRATE INTERCONNECTS AND MEMS DEVICE 审中-公开
    具有通过基板互连和MEMS器件的电子系统

    公开(公告)号：WO2017004063A1

    公开(公告)日：2017-01-05

    申请号：PCT/US2016/039859

    申请日：2016-06-28

    Applicant: KIONIX, INC.

    Inventor： ADAMS, Scott G. ,  BLACKMER, Charles W.

    IPC: B81C1/00

    CPC classification number: B81B7/007 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  H01L21/30604 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5329

    Abstract: Disclosed are systems, methods, and computer program products for electronic systems with through-substrate interconnects and mems device. An interconnect formed in a substrate having a first surface and a second surface, the interconnect includes: a bulk region; a via extending from the first surface to the second surface; an insulating structure extending through the first surface into the substrate and defining a closed loop around the via, wherein the insulating structure comprises a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface, the insulating region separating the via from the bulk region, wherein the insulating structure and insulating region collectively provide electrical isolation between the via and the bulk region.

    Abstract translation: 公开了用于具有贯穿衬底互连和mems器件的电子系统的系统，方法和计算机程序产品。 形成在具有第一表面和第二表面的基底中的互连，所述互连包括：体区域; 从第一表面延伸到第二表面的通孔; 绝缘结构，其延伸穿过所述第一表面进入所述基底并围绕所述通孔限定闭合环，其中所述绝缘结构包括由至少一个实心部分分开的接缝部分; 以及从所述绝缘结构朝向所述第二表面延伸的绝缘区域，所述绝缘区域将所述通孔与所述主体区域分离，其中所述绝缘结构和绝缘区域共同地提供所述通孔和所述主体区域之间的电隔离。

    STRESS RELIEF MEMS STRUCTURE AND PACKAGE
    133.
    发明申请
    STRESS RELIEF MEMS STRUCTURE AND PACKAGE 审中-公开
    应力消除MEMS结构和封装

    公开(公告)号：WO2016126405A1

    公开(公告)日：2016-08-11

    申请号：PCT/US2016/013613

    申请日：2016-01-15

    Applicant: MKS INSTRUMENTS, INC.

    Inventor： LEI, Gu ,  BART, Stephen F.

    IPC: B81B7/02 ,  B81B7/04 ,  B81C1/00 ,  B81C3/00 ,  G01L19/00 ,  G01K13/00 ,  G01P15/00

    CPC classification number: B81B7/0048 ,  B81B2201/0264 ,  B81C1/00325 ,  B81C1/00547 ,  B81C2201/013 ,  H01L2224/48091 ,  H01L2924/00014

    Abstract: Stress relief structures and methods that can be applied to MEMS sensors requiring a hermetic seal and that can be simply manufactured are disclosed. The system includes a sensor having a first surface and a second surface, the second surface being disposed away from the first surface, the second surface also being disposed away from a package surface and located between the first surface and the package surface, a number of support members, each support member extending from the second surface to the package surface, the support members being disposed on and operatively connected to only a portion of the second surface. The support member are configured to reduce stress produced by package-sensor interaction.

    Abstract translation: 公开了可应用于需要气密密封并且可以简单制造的MEMS传感器的应力消除结构和方法。 所述系统包括具有第一表面和第二表面的传感器，所述第二表面远离所述第一表面设置，所述第二表面还远离封装表面设置并位于所述第一表面和所述封装表面之间， 支撑构件，每个支撑构件从第二表面延伸到包装表面，支撑构件设置在第二表面的一部分上并且可操作地连接到第二表面。 支撑构件被配置为减少由包传感器相互作用产生的应力。

    LOW-STRESS DOPED ULTRANANOCRYSTALLINE DIAMOND
    134.
    发明申请
    LOW-STRESS DOPED ULTRANANOCRYSTALLINE DIAMOND 审中-公开
    低应力超声波超声波钻石

    公开(公告)号：WO2015179421A1

    公开(公告)日：2015-11-26

    申请号：PCT/US2015/031610

    申请日：2015-05-19

    Applicant: UCHICAGO ARGONNE, LLC

    Inventor： SUMANT, Anirudha V. ,  BUJA, Federico ,  VAN SPENGEN, Willem Merlijn

    IPC: B32B3/00 ,  C22C26/00 ,  C22C49/11

    CPC classification number: B81B3/0024 ,  B81B3/0075 ,  B81C1/0038 ,  B81C2201/013 ,  B81C2201/017 ,  B81C2201/0171 ,  B81C2201/0176 ,  C23C14/16

    Abstract: Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrystalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCO with thickness in the range of 3-4 micron also reduces inplane stress significantly. Such coatings can be used in MEMS applications.

    Abstract translation: 纳米/微机电系统（MEMS）中的纳米晶金刚石涂层表现出应力。 掺杂的纳米晶体金刚石涂层表现出增加的应力。 碳化物形成金属涂层减少了面内应力。 此外，没有任何金属涂层，简单地生长厚度在3-4微米范围内的UNCD或NCO也显着降低了平面内的应力。 这种涂层可用于MEMS应用。

    SUBSTRAT MICROSTRUCTURE
    135.
    发明申请
    SUBSTRAT MICROSTRUCTURE 审中-公开
    微结构衬底

    公开(公告)号：WO2015052412A1

    公开(公告)日：2015-04-16

    申请号：PCT/FR2014/052505

    申请日：2014-10-02

    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE NANTES

    Inventor： LETHIEN, Christophe ,  TILMANT, Pascal ,  EUSTACHE, Etienne ,  ROLLAND, Nathalie ,  BROUSSE, Thierry

    IPC: B81C1/00

    CPC classification number: H01M10/02 ,  B81B1/002 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81C1/00047 ,  B81C1/00111 ,  B81C2201/0112 ,  B81C2201/013 ,  B81C2201/0159 ,  H01G11/70 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0585 ,  H01M2220/30

    Abstract: La présente invention concerne un substrat microstructuré comportant une pluralité d'au moins une microstructure élémentaire (3) et le procédé de fabrication dudit substrat microstructuré. Ladite au moins une microstructure élémentaire (3), d'une part, présente une forme allongée et des extrémités inférieure (3a) et supérieure (3b) longitudinales opposées, l'extrémité inférieure (3a) étant reliée au substrat et, d'autre part, comporte une cavité ouverte (5) au niveau de son extrémité supérieure (3b), ledit substrat microstructuré comprenant de l'alumine à sa surface. La présente invention concerne également un dispositif de stockage électrique, plus particulièrement une batterie tout solide, comportant le substrat microstructuré selon l'invention.

    Abstract translation: 本发明涉及包含多个至少一个基本微结构（3）的微结构化衬底，以及用于制备所述微结构衬底的方法。 所述至少一个基本微结构（3）具有长形状和相对的纵向下部（3a）和上部（3b）端部，所述下部端部（3a）连接到所述基底，并且还包括所述开口腔 所述微结构化衬底在其表面上包括氧化铝。 本发明还涉及包含根据本发明的微结构化衬底的电存储装置，更具体地说是全固体电池。

    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF
    136.
    发明申请
    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF 审中-公开
    MEMS组件及其水平制造方法

    公开(公告)号：WO2015042700A1

    公开(公告)日：2015-04-02

    申请号：PCT/CA2014/050902

    申请日：2014-09-19

    Applicant: MOTION ENGINE INC.

    Inventor： BOYSEL, Robert Mark

    IPC: B81C1/00 ,  B81B7/02

    CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2203/0792

    Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

    Abstract translation: 提供MEMS和制造MEMS部件的方法。 该方法包括提供包括顶盖晶片，MEMS晶片和任选的底盖晶片的MEMS晶片叠层。 MEMS晶片具有图案化的MEMS结构。 MEMS晶片和盖晶片包括形成在晶片堆叠内延伸的绝缘导电路径的绝缘导电沟道。 晶片堆叠结合到在其顶侧上具有电触点的集成电路晶片，使得绝缘导电路径从集成电路晶片延伸到顶盖晶片的外侧。 形成顶盖晶片外侧的电触点，并与顶盖晶片的相应的绝缘导电通道电连接。 然后将MEMS晶片堆叠和集成电路晶片切割成具有容纳在其中的相应密封室和MEMS结构的部件。

    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) VARIABLE CAPACITOR APPARATUSES AND RELATED METHODS
    137.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) VARIABLE CAPACITOR APPARATUSES AND RELATED METHODS 审中-公开
    微电子机械系统（MEMS）可变电容器装置及相关方法

    公开(公告)号：WO2014047525A1

    公开(公告)日：2014-03-27

    申请号：PCT/US2013/061065

    申请日：2013-09-20

    Applicant: WISPRY, INC.

    Inventor： MORRIS, Arthur, S. ,  DEREUS, Dana ,  BAYTAN, Norito

    IPC: H01G5/16

    CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/0016 ,  B81B3/0051 ,  B81B2201/0221 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/013 ,  H01G5/18 ,  H01G7/00

    Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

    Abstract translation: 用于微机电系统（MEMS）可调谐电容器的系统，装置和方法可以包括附接到基板的固定致动电极，附接到基板的固定电容电极和位于基板上方的可移动部件， 固定的致动电极和固定的电容电极。 可移动部件可以包括位于固定致动电极上方的可动致动电极和位于固定电容电极上方的可动电容电极。 可移动电容电极的至少一部分可以通过第一间隙与固定电容电极间隔开，并且可移动致动电极可以通过比第一间隙大的第二间隙与固定的致动电极间隔开。

Patent Agency Ranking