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    Method for etched cavity devices
    131.
    发明授权
    Method for etched cavity devices 有权
    蚀刻腔体装置的方法

    公开(公告)号：US08709848B2

    公开(公告)日：2014-04-29

    申请号：US13088100

    申请日：2011-04-15

    Applicant: Srivatsa G. Kundalgurki ,  Scott Dye

    Inventor： Srivatsa G. Kundalgurki ,  Scott Dye

    IPC: H01L21/02 ,  H01L21/3065

    CPC classification number: G01L9/0042 ,  B81C1/00047 ,  B81C2201/0123 ,  B81C2201/0146 ,  B81C2201/017 ,  H01L21/02057 ,  H01L21/30608 ,  H01L21/3065

    Abstract: MEMS devices (40) using etched cavities (42) are desirably formed using multiple etching steps. Preliminary cavities (20) formed by locally anisotropic etching to nearly the final depth have irregular (46) sidewalls (44) and steep and/or inconsistent sidewall (44) to bottom (54) intersection angles (48). This leads to less than desired cavity diaphragm (26) burst strengths. Final cavities (42) with smooth sidewalls (50), smaller and consistent sidewall (50) to bottom (54) intersection angles (58), and having more than doubled cavity diaphragm (26) burst strengths are obtained by treating the preliminary cavities (20) with TMAH etchant, preferably relatively dilute TMAH etchant. In a preferred embodiment, a cleaning step is performed between the etching step and the TMAH treatment step to remove any anisotropic etching by-products present on the preliminary cavities' (20) initial sidewalls (44). The multi-step cavity etching procedure is especially useful for forming robust MEMS pressure sensors, but is applicable to any type of MEMS device.

    Abstract translation: 期望使用多个蚀刻步骤形成使用蚀刻腔（42）的MEMS器件（40）。 通过局部各向异性腐蚀形成的接近最终深度的初级腔（20）具有不规则的（46）侧壁（44）和陡峭和/或不一致的侧壁（44）至底部（54）交叉角（48）。 这导致比所需的腔膜（26）突发强度小。 通过处理预备空腔（2）获得具有平滑侧壁（50），更小且一致的侧壁（50）到底部（54）交叉角（58）并且具有多于两倍的腔隔膜（26）的突出强度的最终腔（42） 20）与TMAH蚀刻剂，优选相对稀释的TMAH蚀刻剂。 在优选的实施方案中，在蚀刻步骤和TMAH处理步骤之间进行清洁步骤以去除预备空腔（20）初始侧壁（44）上存在的任何各向异性蚀刻副产物。 多阶腔蚀刻程序对于形成坚固的MEMS压力传感器尤其有用，但适用于任何类型的MEMS器件。

    MEMS devices with multi-component sacrificial layers
    134.
    发明授权
    MEMS devices with multi-component sacrificial layers 失效
    具有多组分牺牲层的MEMS器件

    公开(公告)号：US08300299B2

    公开(公告)日：2012-10-30

    申请号：US13098292

    申请日：2011-04-29

    Applicant: Ming-Hau Tung ,  Lior Kogut

    Inventor： Ming-Hau Tung ,  Lior Kogut

    IPC: G02B26/00 ,  H01L21/311

    CPC classification number: B81C1/00801 ,  B81B3/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81C2201/0109 ,  B81C2201/017 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/30 ,  Y10T428/31678 ,  Y10T428/31935

    Abstract: Methods of forming a protective coating on one or more surfaces of a microelectromechanical device are disclosed comprising the steps of forming a composite layer of a sacrificial material and a protective material, and selectively etching the sacrificial material to form a protective coating. The protective coatings of the invention preferably improve one or more aspects of the performance of the microelectromechanical devices in which they are incorporated. Also disclosed are microelectromechanical devices formed by methods of the invention, and visual display devices incorporating such devices.

    Abstract translation: 公开了在微机电装置的一个或多个表面上形成保护涂层的方法，其包括以下步骤：形成牺牲材料和保护材料的复合层，并选择性地蚀刻牺牲材料以形成保护涂层。 本发明的保护性涂层优选地改进了其中并入其中的微机电装置的性能的一个或多个方面。 还公开了通过本发明的方法形成的微机电装置以及包括这种装置的视觉显示装置。

    Film stress management for MEMS through selective relaxation
    135.
    发明授权
    Film stress management for MEMS through selective relaxation 有权
    通过选择性放松对MEMS的薄膜应力管理

    公开(公告)号：US08138495B2

    公开(公告)日：2012-03-20

    申请号：US11968399

    申请日：2008-01-02

    Applicant: George Patrick Watson

    Inventor： George Patrick Watson

    IPC: H01L29/06 ,  H01L31/00

    CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C2201/017 ,  Y10T74/1553

    Abstract: An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of adjacent pairs of the dislocations, direction vectors of the dislocations form acute angles of less than about 45 degrees.

    Abstract translation: 一种包括微机电系统的装置。 微机电系统包括其中具有位错的晶体结构元件。 对于至少约60％的相邻位错对，位错的方向向量形成小于约45度的锐角。

    Sacrificial spacer process and resultant structure for MEMS support structure
    138.
    发明授权
    Sacrificial spacer process and resultant structure for MEMS support structure 失效
    用于MEMS支撑结构的牺牲隔离工艺和结构

    公开(公告)号：US07545552B2

    公开(公告)日：2009-06-09

    申请号：US11583575

    申请日：2006-10-19

    Applicant: Gregory David U'Ren

    Inventor： Gregory David U'Ren

    IPC: G02B26/00 ,  G02B26/08

    CPC classification number: B81B3/0072 ,  B81B2201/047 ,  B81B2203/0109 ,  B81B2203/053 ,  B81C2201/017 ,  G02B26/001

    Abstract: Disclosed is a microelectromechanical systems (MEMS) device and method of manufacturing the same. MEMS such as an interferometric modulator include a sidewall spacer formed adjacent to a movable mirror. The sidewall spacer may be a sacrificial spacer that is removed during fabrication, or it may remain in the final product. Increased clearance is provided between the movable mirror and a support structure during actuation of the movable mirror, thereby avoiding contact during operation of the interferometric modulator. The deformable layer may be deposited in a more continuous fashion over the contour of a lower layer as determined by the contour of the sidewall spacer, resulting in a stronger and more resilient deformable layer.

    Abstract translation: 公开了一种微机电系统（MEMS）装置及其制造方法。 诸如干涉式调制器的MEMS包括邻近可移动反射镜形成的侧壁间隔物。 侧壁间隔件可以是在制造期间被去除的牺牲间隔物，或者它可以保留在最终产品中。 在可移动镜的致动期间，在可移动镜和支撑结构之间提供增加的间隙，从而避免在干涉式调制器的操作期间的接触。 可变形层可以以更连续的方式沉积在由侧壁间隔物的轮廓确定的较低层的轮廓上，从而形成更坚固且更具弹性的可变形层。

    Control of stress in metal films by controlling the temperature during film deposition
    140.
    发明申请
    Control of stress in metal films by controlling the temperature during film deposition 失效
    通过控制膜沉积过程中的温度来控制金属膜中的应力

    公开(公告)号：US20040234736A1

    公开(公告)日：2004-11-25

    申请号：US10441457

    申请日：2003-05-20

    Inventor： Ho Bun Chan ,  Martin Haueis

    IPC: B32B015/00

    CPC classification number: C23C14/541 ,  B81C1/00666 ,  B81C2201/017 ,  C23C14/16 ,  G02B6/3518 ,  Y10T428/12674 ,  Y10T428/12806 ,  Y10T428/24917

    Abstract: Materials such as titanium are vapor-deposited to form a film on a substrate while the substrate is thermally coupled to a temperature-controlling thermal source. Varying the temperature conditions of the substrate when the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the substrate temperature when the film is deposited. A stress-controlled titanium film may be used, for example, as an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface.

    Abstract translation: 气相沉积诸如钛的材料以在衬底上热耦合到温度控制热源的同时在衬底上形成膜。 当沉积膜时，改变衬底的温度条件改变了膜的固有应力，这改变了由膜的存在引起的衬底形状的变化。 具有期望的固有应力的膜可以通过在沉积膜时控制衬底温度来获得。 可以使用应力控制的钛膜，例如作为光学MEMS器件中的硅可移动结构和用作反射表面的金层之间的粘合层。

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