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    Detector system for use with transmission electron microscope spectroscopy
    133.
    发明公开
    Detector system for use with transmission electron microscope spectroscopy 有权
    用于透射电子显微镜光谱学的检测器系统

    公开(公告)号：EP2423943A1

    公开(公告)日：2012-02-29

    申请号：EP11178559.8

    申请日：2011-08-24

    Applicant: FEI COMPANY

    Inventor： Luecken, Uwe ,  Kooijman, Cees ,  Schuurmans, Frank

    IPC: H01J37/244 ,  H01J37/05 ,  H01J37/26

    CPC classification number: H01J37/244 ,  H01J37/05 ,  H01J37/26 ,  H01J2237/05 ,  H01J2237/24455 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/2802 ,  H01J2237/2817

    Abstract: A detector system for a transmission electron microscope includes a first detector for recording a pattern and a second detector for recording a position of a feature of the pattern. The second detector is preferably a position sensitive detector that provides accurate, rapid position information that can be used as feedback to stabilize the position of the pattern on the first detector. In one embodiment, the first detector detects an electron energy loss electron spectrum, and the second detector, positioned behind the first detector and detecting electrons that pass through the first detector, detects the position of the zero-loss peak and adjusts the electron path to stabilize the position of the spectrum on the first detector.

    Abstract translation: 用于透射电子显微镜的检测器系统包括用于记录图案的第一检测器和用于记录图案的特征的位置的第二检测器。 第二检测器优选是位置敏感检测器，其提供精确的快速位置信息，该位置信息可以用作反馈以稳定第一检测器上图案的位置。 在一个实施例中，第一检测器检测电子能量损失电子光谱，并且位于第一检测器后面并检测通过第一检测器的电子的第二检测器检测零损耗峰值的位置并将电子路径调整为 稳定第一个探测器上的光谱位置。

    Electron spectroscopy
    135.
    发明公开
    Electron spectroscopy 有权
    电子能谱

    公开(公告)号：EP2133903A3

    公开(公告)日：2011-10-26

    申请号：EP09251534.5

    申请日：2009-06-11

    Applicant: Kratos Analytical Limited

    Inventor： Page, Simon

    IPC: H01J37/08 ,  H01J37/05 ,  H01J37/295 ,  H01J37/30 ,  G01N23/22 ,  H01J49/48

    CPC classification number: H01J37/05 ,  G01N23/2273 ,  H01J37/08 ,  H01J37/295 ,  H01J37/30 ,  H01J2237/05 ,  H01J2237/08 ,  H01J2237/0815

    Abstract: The present invention provides an electron spectroscopy apparatus (12) comprising a high energy particle source (12) for irradiating a sample, an electron detector system (16) (e.g. including a delay line detector) for detecting electrons emitted from the sample and an ion gun (8) for delivering a polycyclic aromatic hydrocarbon (PAH) ion beam to the sample, wherein the ion gun comprises a polycyclic aromatic hydrocarbon ion source, for example comprising coronene. In an embodiment, the PAH is located in a heated chamber (22) and vaporised to produce gas phase PAH. The gas phase PAH molecules are then ionised by electron impact, extracted from the ion source via an extraction field and focussed using ion optics. The PAH ion beam can be used for surface cleaning and depth analysis.

    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
    136.
    发明公开
    LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION 审中-公开
    随着对高离子注入低污染，低能耗建筑兰斯

    公开(公告)号：EP2266128A2

    公开(公告)日：2010-12-29

    申请号：EP09733910.5

    申请日：2009-04-23

    Applicant: Axcelis Technologies, Inc.

    Inventor： HUANG, Y

    IPC: H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/3007 ,  H01J2237/022 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/24528

    Abstract: An ion implantation system (500) comprising an ion source (502) that generates an ion beam (504) along a beam path (505, 507) a mass analyzer component (514) downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture (516) electrode comprising at least one electrode downstream of the mass analyzer component (514) and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element (518) downstream of the resolving aperture electrode that changes the path of the ion beam (507) exiting the deflection element, a deceleration electrode (519) downstream of the deflection element that decelerates the ion beam, a support platform within an end station (526) for retaining and positioning a workpiece (522) which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.

    Electron microscope and observation method of biological specimen
    137.
    发明公开
    Electron microscope and observation method of biological specimen 审中-公开
    Proben生物学家Elektronenmikroskop und Verfahren zur Untersuchung生物学家

    公开(公告)号：EP1437758A2

    公开(公告)日：2004-07-14

    申请号：EP03016333.1

    申请日：2003-07-18

    Applicant: Hitachi, Ltd. ,  Hitachi High-Technologies Corporation

    Inventor： Kakibayashi, Hiroshi, Hitachi, Ltd. ,  Hosoki, Shigeyuki, Hitachi, Ltd. ,  Takagi, Yuji, Hitachi, Ltd. ,  Miyake, Ryo, Hitachi, Ltd. ,  Nakamura, Kuniyasu, Hitachi, Ltd. ,  Sato, Mitsugu, Hitachi High-Technologies Corp. ,  Kobayashi, Hiroyuki, Hitachi High-Technologies C.

    IPC: H01J37/26 ,  H01J37/22

    CPC classification number: H01J37/22 ,  H01J37/26 ,  H01J2237/05 ,  H01J2237/2809 ,  H01J2237/2813

    Abstract: An object of the present invention is to realize a bio electron microscope and an observation method which can observe a bio specimen by low damage and high contrast to perform high-accuracy image analysis, and conduct high-throughput specimen preparation. 1) A specimen is observed at an accelerating voltage 1.2 to 4.2 times a critical electron accelerating voltage possible to transmit a specimen obtained under predetermined conditions. 2) An electron energy filter of small and simplified construction is provided between the specimen and an electron detector for imaging by the electron beam in a specified energy region of the electron beams transmitting the specimen. 3) Similarity between an observed image such as virus or protein in the specimen and a reference image such as known virus or protein is subjected to quantitative analysis by image processing. 4) A preparation protocol of the bio specimen is made into a chip using an MEMS technique, which is then mounted on a specimen stage part of an electron microscope to conduct specimen introduction, preparation and transfer onto a specimen holder.

    Abstract translation: 生物电子显微镜和相关观察方法是新的。 包括以下的独立权利要求：（1）生物电子显微镜，包括：（a）用于会聚或准直加速电子束以将其照射到样品上的电子照明系统; 和（b）用于检测从样品表面发射的反射电子的样品或二次电子传输的电子的成像系统，以获得电子检测器和样本之间的电子能过滤器的放大图像; 和（2）使用生物电子显微镜的观察方法，其中在临界电子加速电压下观察样品，允许透射样品，或者在加速电压的1.2至1.4倍的临界加速电压下，允许透射在预定 条件。

    Ion implantation apparatus
    138.
    发明公开
    Ion implantation apparatus 失效
    离子注入装置

    公开(公告)号：EP0701269A1

    公开(公告)日：1996-03-13

    申请号：EP95115720.5

    申请日：1990-08-17

    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA ,  NISSHIN DENKI KABUSHIKI KAISHA

    Inventor： Shono, Kazuhiro, c/o Mitsubishi Denki K.K. ,  Sasaki, Shigeo, c/o Mitsubishi Denki K.K. ,  Katoh, Susumu, c/o c/o Mitsubishi Denki K.K. ,  Naitou, Masao, c/o Nisshin Denki K.K. ,  Nakanishi, Tetsuya, c/o Mitsubishi Denki K.K. ,  Fujishita, Naomitsu, c/o Mitsubishi Denki K.K. ,  Noguchi, Kazuhiko, c/o Mitsubishi Denki K.K. ,  Tanjo, Masayasu, c/o Nisshin Denki K.K.

    IPC: H01J37/317

    CPC classification number: H01J37/302 ,  H01J37/3171 ,  H01J2237/05

    Abstract: An ion implantation apparatus comprising:

    an ion source (1) comprising an arc chamber (2) generating ions and a drawing electrode (3) drawing ion from said arc chamber (2);
    a mass separator (25) transporting only such ions of the drawn ions which are necessary for implantation to a material into which ions shall be implanted;
    an ion implantation chamber (5) in which said material is arranged; and
    a controlling means for controlling the amount of current and the current density distribution of the ion beam provided by said ion source; wherein said controlling means (10) is arranged to adjust said amount of current and the current density distribution by controlling the distance (d) between said arc chamber (2) and said drawing electrode (3). Said controlling means (10) is arranged to
    determine a divergence angle (ω) based on the beam size on the material into which ions are to be implanted; and
    calculating the distance (d) based on said divergence angle (ω), the length (a) of the opening of the drawing electrode (3), and the normalized perveance P/Pc, whereby P = I EX / V 3/2 and Pc = (4ε 0 /9) (S/d 2 ) (2Ze/m i ) 1/2 , where I EX is the drawing current, V is the drawing voltage, ε₀ is the dielectric constant in vacuum, S is the opening area at the beam drawing part, Z is the ionization number, e is the prime charge and m i is the mass of an ion, from the following equation in the case of a single hole electrode: ω = (1/4) (2a/d) | 1 - (5/3) (P/Pc) | or from the following equation in the case of a slit electrode ω = (17/12) (a/d) | 1 - (25/17) (P/Pc)|.

    Abstract translation: 1。一种离子注入装置，其特征在于，包括：具有产生离子的电弧室（2）和从该电弧室（2）引出离子的引出电极（3）的离子源（1）; 一个质量分离器（25），仅将离子注入所必须的离子抽出到离子注入的材料中; 一个离子注入室（5），其中设置有所述材料; 以及控制装置，用于控制由所述离子源提供的离子束的电流量和电流密度分布; 其中所述控制装置（10）被设置成通过控制所述电弧室（2）和所述引出电极（3）之间的距离（d）来调节所述电流量和电流密度分布。 所述控制装置（10）被布置成基于待注入离子的材料上的光束尺寸来确定发散角（ω） 并根据所述发散角（ω），拉伸电极（3）的开口的长度（a）和标准化渗透率P / Pc来计算距离（d），由此P = IEX / V3 / 2和Pc =（ 4ε0/ 9）（S / d2）（2Ze / mi）1/2，其中IEX是牵引电流，V是牵引电压，ε0是真空中的介电常数，S是光束引出部分的开口面积， Z是离子化数，e是主要电荷，mi是离子的质量，在单孔电极的情况下，从以下等式：ω=（1/4）（2a / d）|。 1 - （5/3）（P / Pc）| 或者在狭缝电极ω=（17/12）（a / d）|的情况下由以下公式得出 1 - （25/17）（P / Pc）|。

    基板処理方法における欠陥削減
    139.
    发明专利
    基板処理方法における欠陥削減 审中-公开
    在基板处理方法减少缺陷

    公开(公告)号：JP2016509263A

    公开(公告)日：2016-03-24

    申请号：JP2015559051

    申请日：2014-02-25

    Applicant: エクソジェネシス コーポレーション ,  エクソジェネシス コーポレーション

    Inventor： カークパトリック，ショーン，アール．

    IPC: G03F1/60 ,  H01J37/08 ,  H01J37/305 ,  H01L21/304

    CPC classification number: G03F1/80 ,  G03F1/50 ,  G03F1/82 ,  H01J2237/0041 ,  H01J2237/05 ,  H01L21/02046 ,  H01L21/02065 ,  H01L2924/0002 ,  H01L2924/00012

    Abstract: 基板表面の処理方法であって、ガスクラスタイオンビームから得られる中性ビーム照射を用いるもの、および、リソグラフィ用フォトマスク基板を含む、本方法から製造される物品。一実施形態で提供されるのは、1つまたは複数の粒子が埋設された、または表面下損傷を含む、基板の表面処理方法であって、低圧チャンバを設ける工程と、低圧チャンバ内に、ガスクラスタイオンからなるガスクラスタイオンビームを形成する工程と、低圧チャンバ内でビーム経路に沿う加速ガスクラスタイオンビームを形成するためにガスクラスタイオンを加速する工程と、ビーム経路に沿う加速ガスクラスタイオンの少なくとも一部の開裂および/または解離を促進する工程と、ビーム経路から荷電粒子を除去して、低圧チャンバ内でビーム経路に沿う加速中性ビームを形成する工程と、表面をビーム経路内に保持する工程と、基板の表面の少なくとも一部に加速中性ビームを照射することによりこれを処理する工程と、を備える方法である。【選択図】図1

    Abstract translation: 制品的方法用于处理衬底表面，利用从气体团簇离子束而获得的中性束照射，并且包括用于光刻的光掩模基板的那些，是由该方法生产。 在一个实施例中，一个或多个所述颗粒的设置被嵌入，或一个亚表面损伤，表面的方法处理基板，包括：提供一个低压室，在低压室的步骤，所述气体 形成簇离子的气体团簇离子束，加速该气体簇离子的步骤，以形成沿着一射束路径在低压室中的加速气体团簇离子束，沿着光束路径加速的气体团簇离子 保持至少促进裂解和/或解离，的一部分，以从光路中除去带电粒子的步骤，和所述低压室中形成沿着光束路径加速中性束，表面中的光束路径 在步骤a中，所述方法包括通过在所述基板的所述表面的至少一部分照射加速中性束处理该步骤 那。 点域1

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